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    • 3. 发明申请
    • IMAGING APPARATUS
    • 成像设备
    • US20120242884A1
    • 2012-09-27
    • US13421295
    • 2012-03-15
    • Hideto ISHIGUROHitoshi TSUCHIYATsukasa EGUCHI
    • Hideto ISHIGUROHitoshi TSUCHIYATsukasa EGUCHI
    • H04N5/225
    • H01L27/14623H01L27/14627
    • An imaging apparatus includes light-transmitting substrate; a plurality of lenses which faces a first surface of the substrate; a light shielding layer which is formed on the second surface of the substrate and has an opening section through which optical axes of each lens pass; and a plurality of light sensing elements which is placed so that the optical axes of the lenses pass through a light sensing surface facing the second surface at an interval. An efficient diameter of the lens, a diameter of the opening section, a distance between the light sensing surfaces and the light shielding layer, a diameter of the light sensing surface, and a distance between the light sensing surface and center of the lens satisfy a sin−1(1/n).
    • 成像装置包括透光基板; 面对基板的第一表面的多个透镜; 遮光层,其形成在所述基板的第二表面上,并且具有开口部,每个透镜的光轴穿过所述开口部; 以及多个光感测元件,其被放置成使得透镜的光轴以一定间隔穿过面对第二表面的感光表面。 透镜的有效直径,开口部分的直径,光感测表面和遮光层之间的距离,光感测表面的直径以及光感测表面和透镜中心之间的距离满足 sin(1 / n)<(h·D + h·d-s·d)/ s和tan-1 {(p-a / 2-d / 2)/ h}
    • 4. 发明申请
    • LIGHT EMITTING APPARATUS, METHOD OF DRIVING LIGHT EMITTING APPARATUS, AND ELECTRONIC APPARATUS
    • 发光装置,驱动发光装置的方法和电子装置
    • US20100321422A1
    • 2010-12-23
    • US12793190
    • 2010-06-03
    • Hideto ISHIGUROSatoshi YATABE
    • Hideto ISHIGUROSatoshi YATABE
    • G09G5/02G09G3/32
    • G09G3/3233G09G3/3266G09G2310/0251G09G2310/0297
    • Provided is a light emitting apparatus where each pixel circuit is provided with the reset transistor, which is disposed between the node of the pixel circuit and the first feed line corresponding to the adjacent pixel circuit in the second direction as viewed from the pixel circuit. In addition, in the initialization period before the selection period, in which the scan line corresponding to the pixel circuit is selected, and in the compensation period, the reset transistor of the pixel circuit is set to the ON state, and the values of the power supply voltages output to the first feed line corresponding to the pixel circuit and the first feed line corresponding to the adjacent pixel circuit in the second direction as viewed from the pixel circuit are variably controlled, so that the initialization or compensation operation of the pixel circuit is performed.
    • 提供一种发光装置,其中每个像素电路设置有复位晶体管,该复位晶体管设置在从像素电路观察的像素电路的节点和对应于相邻像素电路的第二方向上的第一馈电线之间。 此外,在选择与像素电路对应的扫描线的选择期间之前的初始化期间,在补偿期间,将像素电路的复位晶体管设定为ON状态, 可变地控制输出到与像素电路对应的第一馈电线的电源电压和从像素电路观察的与第二方向相对应的相邻像素电路的第一馈电线,使得像素电路的初始化或补偿操作 被执行。
    • 6. 发明申请
    • LIQUID CRYSTAL DEVICE
    • US20090033850A1
    • 2009-02-05
    • US12180092
    • 2008-07-25
    • Hideto ISHIGUROEiji KANDAHitoshi OTA
    • Hideto ISHIGUROEiji KANDAHitoshi OTA
    • G02F1/133
    • G06F3/0412G02F1/13338G02F2001/13312G06F3/042G09G3/3648G09G2300/0465G09G2360/148
    • A liquid crystal device includes a plurality of selection lines, a plurality of signal lines, a plurality of pixel portions, a plurality of photosensor portions, a plurality of first power lines, and a plurality of sense lines. The plurality of selection lines are provided in a line direction. The plurality of signal lines are provided in a column direction. The plurality of pixel portions are provided at positions corresponding to intersections of the selection lines and the signal lines. The plurality of photosensor portions are provided in correspondence with a portion of the plurality of pixel portions. The plurality of first power lines are provided in the line direction. The plurality of sense lines are provided in the column direction. Each of the plurality of pixel portions includes a first switching element and a liquid crystal. The first switching element loads a display signal supplied through a corresponding one of the signal lines as a selection signal supplied through a corresponding one of the selection lines is asserted. The liquid crystal exhibits a bright state corresponding to the display signal that is loaded by the first switching element. The portion of the plurality of pixel portions adjust the amounts of light that enter the plurality of photosensor portions. Each of the plurality of photosensor portions includes a photoelectric conversion element, a capacitive element, a second switching element, and a readout portion. The photoelectric conversion element generates an electric current of which the magnitude corresponds to the amount of light received. One end of the capacitive element is electrically connected to the photoelectric conversion element. The second switching element resets the one end of the capacitive element to a reset voltage that is supplied through a corresponding one of the first power lines. The readout portion outputs, to a corresponding one of the sense lines, an output signal of which the magnitude corresponds to a voltage of the one end of the capacitive element. The second switching element is controlled to any one of an on state or an off state on the basis of the selection signal that is supplied through the corresponding one of the selection lines.
    • 7. 发明申请
    • LIQUID CRYSTAL DEVICE, IMAGE SENSOR, AND ELECTRONIC APPARATUS
    • 液晶装置,图像传感器和电子装置
    • US20080246708A1
    • 2008-10-09
    • US12047508
    • 2008-03-13
    • Hideto ISHIGURO
    • Hideto ISHIGURO
    • G09G3/36
    • G06F3/042G02F1/13318G06F3/0412G09G3/3648
    • The invention provides a liquid crystal device including: a first substrate; a second substrate that is provided over the first substrate in such a manner that the first substrate and the second substrate face each other; a plurality of optical sensing sections that is formed in an image display area over the first substrate; and a plurality of light-amount adjusting sections that is formed in the image display area in such a manner that each of the plurality of light-amount adjusting sections includes a liquid crystal portion that overlaps the corresponding optical sensing section in a plan view, constituting a part of a liquid crystal layer that is sandwiched between the first substrate and the second substrate, the plurality of light-amount adjusting sections being capable of adjusting, independently of one another, the amount of incident light that enters the plurality of optical sensing sections through an image display surface that lies at one of two surfaces of the second substrate that does not face the liquid crystal layer, the image display surface being pointed to by a pointing means.
    • 本发明提供一种液晶装置,包括:第一基板; 以第一基板和第二基板彼此面对的方式设置在第一基板上的第二基板; 多个光学感测部,形成在第一基板上的图像显示区域中; 以及多个光量调节部,其形成在所述图像显示区域中,使得所述多个光量调节部分中的每一个包括在俯视图中与相应的光学感测部分重叠的液晶部分,构成 夹在第一基板和第二基板之间的液晶层的一部分,多个光量调节部能够彼此独立地调节进入多个光学感测部的入射光量 通过位于第二基板的不面向液晶层的两个表面之一的图像显示表面,由指示装置指向图像显示表面。
    • 8. 发明授权
    • Method of manufacturing semiconductor device, method of manufacturing active matrix substrate, and electrooptic device
    • 制造半导体器件的方法,制造有源矩阵衬底的方法和电光器件
    • US06306693B1
    • 2001-10-23
    • US09657901
    • 2000-09-08
    • Hideto IshiguroMinoru MatsuoHiroyuki MuraiMasami Hayashi
    • Hideto IshiguroMinoru MatsuoHiroyuki MuraiMasami Hayashi
    • H01L2100
    • H01L27/127H01L27/1214H01L27/1255H01L29/66757H01L29/78621H01L2029/7863
    • To provide a method of manufacturing a semiconductor device, a method of manufacturing an active matrix substrate, and an electrooptic device in which in forming different type TFTs on the same substrate, a variation in the LDD length or offset length of TFT can be suppressed by a small number of steps. In the method of manufacturing an active matrix substrate, a patterning mask 554 used for forming gate electrodes 15 and 25 is left, and used in introducing a medium concentration of phosphorus ion to introduce impurities in self alignment with the patterning mask 554. Next, with the patterning mask 554 removed, low-concentration of phosphorus ion is introduced by using the gate electrodes 15 and 25 as a mask to form low-concentration source-drain regions 111, 121, 211 and 221 in self alignment with the gate electrodes 15 and 25. The LDD length of each of the regions is equal to the amount of side etching caused in patterning the gate electrodes 15 and 25.
    • 为了提供一种制造半导体器件的方法,制造有源矩阵衬底的方法和电光器件,其中在同一衬底上形成不同类型的TFT时,TFT的LDD长度或偏移长度的变化可以通过 少数步骤。 在制造有源矩阵基板的方法中,留下用于形成栅电极15和25的图形掩模554,用于引入中等浓度的磷离子以引入与图案化掩模554自对准的杂质。接下来, 去除图案化掩模554,通过使用栅电极15和25作为掩模来引入低浓度的磷离子,以形成与栅电极15自对准的低浓度源极 - 漏极区域111,121,211和221,以及 每个区域的LDD长度等于在图案化栅电极15和25时引起的侧蚀刻量。