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1. 发明授权

US09524918B2 Heat dissipating component for semiconductor element 有权
标题翻译：半导体元件散热元件
公开(公告)号：US09524918B2
公开(公告)日：2016-12-20
申请号：US14235533
申请日：2012-07-17
申请人： Hideki Hirotsuru , Hideo Tsukamoto , Yosuke Ishihara
发明人： Hideki Hirotsuru , Hideo Tsukamoto , Yosuke Ishihara
IPC分类号： H01L23/373 , C25D5/12 , C25D5/50 , C25D7/00 , C23C18/16 , B32B15/01 , C22C21/00 , C22C45/04 , B22F7/08 , C22C26/00 , F28F3/00 , B22D18/02
CPC分类号： H01L23/3735 , B22D18/02 , B22F7/08 , B32B15/016 , C22C21/00 , C22C26/00 , C22C45/04 , C23C18/1653 , C25D5/12 , C25D5/50 , C25D7/00 , F28F3/00 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 μm in film thickness, (2) an Ni layer 1-5 μm in film thickness, and (3) an Au layer 0.05-4 μm in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.
摘要翻译：公开了一种用于半导体元件的散热部件，其具有包含40-70体积％的金刚石颗粒的厚度为0.4-6mm的平板状体，余量包括主要成分为铝的金属，并且通过包含主要成分为铝的金属或铝 - 陶瓷基复合材料的涂层，以形成基于铝 - 金刚石的复合体。在主表面侧依次形成至少两个主表面，（1）膜厚为0.1-1μm的非晶Ni合金层，（2）膜厚为1-5μm的Ni层，以及（3）膜厚度为0.05〜4μm的Au层，Ni合金层与Ni层的比例（Ni合金层厚度/ Ni层厚度）为0.3以下。

2. 发明授权

US09387532B2 Composite substrate for LED light emitting element, method of production of same, and LED light emitting element 有权
标题翻译： LED发光元件用复合基板，其制造方法以及LED发光元件
公开(公告)号：US09387532B2
公开(公告)日：2016-07-12
申请号：US13148712
申请日：2010-02-10
申请人： Hideki Hirotsuru , Hideo Tsukamoto , Yosuke Ishihara
发明人： Hideki Hirotsuru , Hideo Tsukamoto , Yosuke Ishihara
IPC分类号： H01L33/64 , C04B41/88 , B22D18/02 , C04B41/00 , C04B41/52 , C04B41/90 , B22F3/26 , C22C26/00 , C22C29/06 , C22C29/12 , C22C29/16
CPC分类号： B22D18/02 , B22F3/26 , B22F2998/10 , C04B41/009 , C04B41/52 , C04B41/90 , C22C26/00 , C22C29/06 , C22C29/12 , C22C29/16 , H01L33/641 , H01L2924/0002 , Y10T428/12007 , C04B41/4521 , C04B41/4523 , C04B41/5155 , C04B41/4541 , C04B41/5144 , C04B41/51 , C04B41/522 , C04B35/04 , C04B38/00 , C04B35/565 , C04B35/584 , C04B35/581 , C04B35/52 , C04B35/522 , C04B35/505 , C04B41/00 , C23C30/00 , H01L2924/00
摘要： A substrate for an LED light emitting element having a small difference of linear thermal expansion coefficient with the III-V semiconductor crystal constituting an LED, having an excellent thermal conductivity, and suitable for high output LEDs. A porous body comprises one or more materials selected from silicon carbide, aluminum nitride, silicon nitride, diamond, graphite, yttrium oxide, and magnesium oxide and has a porosity that is 10 to 50 volume % and a three-point bending strength that is 50 MPa or more. The porous body is infiltrated, by means of liquid metal forging, with aluminum alloy or pure aluminum at an infiltration pressure of 30 MPa or more, cut and/or ground to a thickness of 0.05 to 0.5 mm and to a surface roughness (Ra) of 0.01 to 0.5 μm, then is formed with a metal layer comprising one or more elements selected from Ni, Co, Pd, Cu, Ag, Au, Pt and Sn on its surface to a thickness of 0.5 to 15 μm, so as to thereby produce the composite substrate for the LED light emitting element.
摘要翻译：一种具有与构成LED的III-V半导体晶体的线性热膨胀系数差小的LED发光元件用基板，具有优异的导热性，适用于高输出LED。多孔体包括选自碳化硅，氮化铝，氮化硅，金刚石，石墨，氧化钇和氧化镁中的一种或多种材料，其孔隙率为10〜50体积％，三点弯曲强度为50 MPa以上。多孔体通过液态金属锻造，以30MPa或更大的渗透压力浸入铝合金或纯铝中，切割和/或研磨至0.05至0.5mm的厚度和表面粗糙度（Ra）为0.01〜0.5μm，然后在其表面上形成具有选自Ni，Co，Pd，Cu，Ag，Au，Pt和Sn中的一种或多种元素的金属层，厚度为0.5〜15μm，从而制造用于LED发光元件的复合衬底。

3. 发明申请

US20140182824A1 HEAT DISSIPATING COMPONENT FOR SEMICONDUCTOR ELEMENT 有权
标题翻译：用于半导体元件的散热元件
公开(公告)号：US20140182824A1
公开(公告)日：2014-07-03
申请号：US14235533
申请日：2012-07-17
申请人： Hideki Hirotsuru , Hideo Tsukamoto , Yosuke Ishihara
发明人： Hideki Hirotsuru , Hideo Tsukamoto , Yosuke Ishihara
IPC分类号： H01L23/373 , F28F3/00
CPC分类号： H01L23/3735 , B22D18/02 , B22F7/08 , B32B15/016 , C22C21/00 , C22C26/00 , C22C45/04 , C23C18/1653 , C25D5/12 , C25D5/50 , C25D7/00 , F28F3/00 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 μm in film thickness, (2) an Ni layer 1-5 μm in film thickness, and (3) an Au layer 0.05-4 μm in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.
摘要翻译：公开了一种用于半导体元件的散热部件，其具有包含40-70体积％的金刚石颗粒的厚度为0.4-6mm的平板状体，余量包括主要成分为铝的金属，并且通过包含主要成分为铝的金属或铝 - 陶瓷基复合材料的涂层，以形成基于铝 - 金刚石的复合体。在主表面侧依次形成至少两个主表面，（1）膜厚为0.1-1μm的非晶Ni合金层，（2）膜厚为1-5μm的Ni层，以及（3）膜厚度为0.05〜4μm的Au层，Ni合金层与Ni层的比例（Ni合金层厚度/ Ni层厚度）为0.3以下。

4. 发明授权

US08322398B2 Manufacturing method of aluminum-diamond composite 有权
标题翻译：铝 - 金刚石复合材料的制造方法
公开(公告)号：US08322398B2
公开(公告)日：2012-12-04
申请号：US13054266
申请日：2009-07-14
申请人： Hideki Hirotsuru , Hideo Tsukamoto
发明人： Hideki Hirotsuru , Hideo Tsukamoto
IPC分类号： B22D19/14
CPC分类号： C04B41/88 , B22D19/00 , B22D19/14 , B22F7/04 , B22F2998/10 , B22F2999/00 , C04B35/52 , C04B35/62227 , C04B35/6263 , C04B41/009 , C04B41/5155 , C04B2111/00844 , C04B2235/3418 , C04B2235/427 , C04B2235/5427 , C04B2235/5436 , C04B2235/5472 , C04B2235/6027 , C04B2235/658 , C22C21/00 , C22C26/00 , H01L21/4871 , H01L23/3732 , H01L23/3736 , H01L2924/0002 , C04B41/4523 , C04B41/5096 , C04B38/00 , B22F3/11 , B22F3/26 , B22F3/1003 , H01L2924/00
摘要： A process for the production of an aluminum-diamond composite, characterized by comprising the step of preparing a diamond powder having a specific diameter, the step of adding a colloidal silica to the diamond powder to form a slurry, the step of subjecting the slurry to press forming or slip casting to produce a compact of the diamond particles, the step of firing the compact either in air or in a nitrogen atmosphere to form a porous diamond preform, the step of heating the porous diamond preform, the step of heating an aluminum alloy to a temperature equal to or above the melting point of the alloy and impregnating the molten alloy into the porous diamond preform to make a flat plate-like aluminum-diamond composite wherein both surfaces are covered with surface layers containing an aluminum-base metal, and the step of working the aluminum-diamond composite into an aluminum-diamond composite.
摘要翻译：一种生产铝 - 金刚石复合材料的方法，其特征在于包括制备具有特定直径的金刚石粉末的步骤，向金刚石粉末中加入胶体二氧化硅以形成浆料的步骤，冲压成型或滑移铸造以产生金刚石颗粒的压块，在空气或氮气气氛中烧结压块以形成多孔金刚石预制件的步骤，加热多孔金刚石预成型件的步骤，加热铝合金的温度等于或高于合金的熔点，并将熔融合金浸渍到多孔金刚石预成型件中以制成平板状的铝 - 金刚石复合材料，其中两个表面被含有铝基金属的表面层覆盖，以及将铝 - 金刚石复合材料加工成铝 - 金刚石复合材料的步骤。

5. 发明申请

US20110316040A1 COMPOSITE SUBSTRATE FOR LED LIGHT EMITTING ELEMENT, METHOD OF PRODUCTION OF SAME, AND LED LIGHT EMITTING ELEMENT 有权
标题翻译： LED发光元件的复合基板，其生产方法和LED发光元件
公开(公告)号：US20110316040A1
公开(公告)日：2011-12-29
申请号：US13148712
申请日：2010-02-10
申请人： Hideki Hirotsuru , Hideo Tsukamoto , Yosuke Ishihara
发明人： Hideki Hirotsuru , Hideo Tsukamoto , Yosuke Ishihara
IPC分类号： H01L33/30 , B22F3/26 , B05D5/12 , H01L33/40
CPC分类号： B22D18/02 , B22F3/26 , B22F2998/10 , C04B41/009 , C04B41/52 , C04B41/90 , C22C26/00 , C22C29/06 , C22C29/12 , C22C29/16 , H01L33/641 , H01L2924/0002 , Y10T428/12007 , C04B41/4521 , C04B41/4523 , C04B41/5155 , C04B41/4541 , C04B41/5144 , C04B41/51 , C04B41/522 , C04B35/04 , C04B38/00 , C04B35/565 , C04B35/584 , C04B35/581 , C04B35/52 , C04B35/522 , C04B35/505 , C04B41/00 , C23C30/00 , H01L2924/00
摘要： A substrate for an LED light emitting element having a small difference of linear thermal expansion coefficient with the III-V semiconductor crystal constituting an LED, having an excellent thermal conductivity, and suitable for high output LEDs. A porous body comprises one or more materials selected from silicon carbide, aluminum nitride, silicon nitride, diamond, graphite, yttrium oxide, and magnesium oxide and has a porosity that is 10 to 50 volume % and a three-point bending strength that is 50 MPa or more. The porous body is infiltrated, by means of liquid metal forging, with aluminum alloy or pure aluminum at an infiltration pressure of 30 MPa or more, cut and/or ground to a thickness of 0.05 to 0.5 mm and to a surface roughness (Ra) of 0.01 to 0.5 μm, then is formed with a metal layer comprising one or more elements selected from Ni, Co, Pd, Cu, Ag, Au, Pt and Sn on its surface to a thickness of 0.5 to 15 μm, so as to thereby produce the composite substrate for the LED light emitting element.
摘要翻译：一种具有与构成LED的III-V半导体晶体的线性热膨胀系数差小的LED发光元件用基板，具有优异的导热性，适用于高输出LED。多孔体包括选自碳化硅，氮化铝，氮化硅，金刚石，石墨，氧化钇和氧化镁中的一种或多种材料，其孔隙率为10〜50体积％，三点弯曲强度为50 MPa以上。多孔体通过液态金属锻造，以30MPa或更大的渗透压力渗入铝合金或纯铝，切割和/或研磨至0.05至0.5mm的厚度和表面粗糙度（Ra）为0.01〜0.5μm，然后在其表面上形成具有选自Ni，Co，Pd，Cu，Ag，Au，Pt和Sn中的一种或多种元素的金属层，厚度为0.5〜15μm，从而制造用于LED发光元件的复合衬底。

6. 发明申请

US20110198771A1 MANUFACTURING METHOD OF ALUMINUM-DIAMOND COMPOSITE 有权
标题翻译：铝 - 金刚石复合材料的制造方法
公开(公告)号：US20110198771A1
公开(公告)日：2011-08-18
申请号：US13054266
申请日：2009-07-14
申请人： Hideki Hirotsuru , Hideo Tsukamoto
发明人： Hideki Hirotsuru , Hideo Tsukamoto
IPC分类号： B29C44/06
CPC分类号： C04B41/88 , B22D19/00 , B22D19/14 , B22F7/04 , B22F2998/10 , B22F2999/00 , C04B35/52 , C04B35/62227 , C04B35/6263 , C04B41/009 , C04B41/5155 , C04B2111/00844 , C04B2235/3418 , C04B2235/427 , C04B2235/5427 , C04B2235/5436 , C04B2235/5472 , C04B2235/6027 , C04B2235/658 , C22C21/00 , C22C26/00 , H01L21/4871 , H01L23/3732 , H01L23/3736 , H01L2924/0002 , C04B41/4523 , C04B41/5096 , C04B38/00 , B22F3/11 , B22F3/26 , B22F3/1003 , H01L2924/00
摘要： A process for the production of an aluminum-diamond composite, characterized by comprising the step of preparing a diamond powder having a specific diameter, the step of adding a colloidal silica to the diamond powder to form a slurry, the step of subjecting the slurry to press forming or slip casting to produce a compact of the diamond particles, the step of firing the compact either in air or in a nitrogen atmosphere to form a porous diamond preform, the step of heating the porous diamond preform, the step of heating an aluminum alloy to a temperature equal to or above the melting point of the alloy and impregnating the molten alloy into the porous diamond preform to make a flat plate-like aluminum-diamond composite wherein both surfaces are covered with surface layers containing an aluminum-base metal, and the step of working the aluminum-diamond composite into an aluminum-diamond composite.
摘要翻译：一种生产铝 - 金刚石复合材料的方法，其特征在于包括制备具有特定直径的金刚石粉末的步骤，向金刚石粉末中加入胶体二氧化硅以形成浆料的步骤，冲压成型或滑移铸造以产生金刚石颗粒的压块，在空气或氮气气氛中烧结压块以形成多孔金刚石预制件的步骤，加热多孔金刚石预成型件的步骤，加热铝合金的温度等于或高于合金的熔点，并将熔融合金浸渍到多孔金刚石预成型件中以制成平板状的铝 - 金刚石复合材料，其中两个表面被含有铝基金属的表面层覆盖，以及将铝 - 金刚石复合材料加工成铝 - 金刚石复合材料的步骤。

7. 发明授权

US07336077B2 Magnet for NMR analyzer and NMR analyzer using the same 失效
标题翻译：用于NMR分析仪的磁体和使用其的NMR分析仪
公开(公告)号：US07336077B2
公开(公告)日：2008-02-26
申请号：US11600039
申请日：2006-11-16
申请人： Tsuyoshi Wakuda , Michiya Okada , Tomomi Kikuta , Kohji Maki , Hiroshi Morita , Shuichi Kido , Tomoo Chiba , Hideo Tsukamoto
发明人： Tsuyoshi Wakuda , Michiya Okada , Tomomi Kikuta , Kohji Maki , Hiroshi Morita , Shuichi Kido , Tomoo Chiba , Hideo Tsukamoto
IPC分类号： G01V3/00
CPC分类号： G01R33/3815
摘要： A magnet for an NMR analyzer includes a superconductor coil for generating a magnetic field in a magnetic space surrounded by the superconductor coil. The superconductor coil has a shim coil group disposed at least one of inside and outside of the superconducting coil. The superconducting coil provides a first access port for receiving a probe inserted into the magnetic space along a central axis thereof and a second access port having one end for receiving a sample tube containing a sample inserted into the magnetic space in a direction transverse to the central axis of the magnetic space. The second access port is open at an other end thereof.
摘要翻译：用于NMR分析仪的磁体包括用于在由超导体线圈包围的磁空间中产生磁场的超导体线圈。超导体线圈具有设置在超导线圈的内部和外部中的至少一个的衬垫线圈组。超导线圈提供第一进入端口，用于接收沿着其中心轴线插入到磁性空间中的探针，第二进入端口具有一端，用于接收包含沿横向于中心的方向插入到磁性空间中的样本的样本管轴的磁空间。第二进入口在另一端开放。

8. 发明申请

US20060227471A1 Superconducting magnet system with quench protection circuit 有权
标题翻译：具有淬火保护电路的超导磁体系统
公开(公告)号：US20060227471A1
公开(公告)日：2006-10-12
申请号：US11443291
申请日：2006-05-31
申请人： Mitsuyoshi Tsuchiya , Kazuhiro Takeuchi , Hideo Tsukamoto , Tsuyoshi Wakuda
发明人： Mitsuyoshi Tsuchiya , Kazuhiro Takeuchi , Hideo Tsukamoto , Tsuyoshi Wakuda
IPC分类号： H02H7/00
CPC分类号： H02H7/001 , Y02E40/68
摘要： A superconducting magnet system with a quench protection circuit includes a superconducting magnet having a plurality of series-connected superconducting coils, a persistent current switch connected in parallel with the superconducting coils, and first and second quench protection circuits connected in parallel with the superconducting coils and the persistent current switch. The first quench protection circuit includes anti-parallel diodes and parallelly connected resistive heaters and shunt resistors, and the resistive heaters and the shunt resistors are each connected in series with the diodes. The second quench protection circuit has a diode and a metal of copper connected with the diode, and a turn-on voltage of the diode in the second quench protection circuit is lower than a turn-on voltage of the diodes in the first quench protection circuit.
摘要翻译：具有骤冷保护电路的超导磁体包括具有多个串联超导线圈的超导磁体，与超导线圈并联连接的持续电流开关，以及与超导线圈并联连接的第一和第二骤冷保护电路，持续电流开关。第一个骤冷保护电路包括反并联二极管和并联电阻加热器和分流电阻，并且电阻加热器和分流电阻均与二极管串联。第二骤冷保护电路具有与二极管连接的二极管和铜的金属，第二骤冷保护电路中的二极管的导通电压低于第一骤冷保护电路中的二极管的导通电压。

9. 发明申请

US20140339596A1 CLAD MATERIAL FOR LED LIGHT-EMITTING ELEMENT HOLDING SUBSTRATE, AND METHOD FOR MANUFACTURING SAME 有权
标题翻译： LED发光元件保持基板用材料及其制造方法
公开(公告)号：US20140339596A1
公开(公告)日：2014-11-20
申请号：US14344196
申请日：2012-09-05
申请人： Yosuke Ishihara , Hideki Hirotsuru , Hideo Tsukamoto
发明人： Yosuke Ishihara , Hideki Hirotsuru , Hideo Tsukamoto
IPC分类号： H01L33/12 , H01L33/00 , H01L33/30 , H01L33/48
CPC分类号： H01L33/12 , H01L33/005 , H01L33/0079 , H01L33/30 , H01L33/48 , H01L33/641 , H01L2933/0025 , H01L2933/0075
摘要： Disclosed is a clad material for an LED light-emitting element holding substrate in which a plurality of layers composed of different materials are stacked and bonded via a metal layer to a III-V group semiconductor crystal surface, the linear expansion coefficient being 14×10−6/K or less and the thermal conductivity at a temperature of 25° C. being 200 W/mK or greater. The clad material is composed of three alternately stacked layers: two copper layers and a molybdenum layer, the molybdenum layer being 10 to 60 vol % and the difference in thickness between the copper layers being 5% or less; or a clad material composed of three copper layers alternately stacked with molybdenum layers to make five layers, the molybdenum layers being 20 to 70 vol % and the difference in thickness between the top and bottom two copper layers and the molybdenum layers being 5% or less.
摘要翻译：公开了一种用于LED发光元件保持基板的包覆材料，其中由不同材料组成的多个层通过金属层堆叠并结合到III-V族半导体晶体表面，线性膨胀系数为14×10 -6 / K以下，温度25℃时的导热率为200W / mK以上。包层材料由三个交替堆叠的层组成：两个铜层和钼层，钼层为10至60体积％，铜层之间的厚度差为5％或更小; 或由三层交替层叠钼层构成五层的包层材料，钼层为20〜70体积％，顶部和底部两个铜层和钼层之间的厚度差为5％以下。

10. 发明申请

US20120168802A1 WAFER FOR LED MOUNTING, METHOD FOR MANUFACTURING SAME, AND LED-MOUNTED STRUCTURE USING THE WAFER 有权
标题翻译：用于LED安装的散热器，其制造方法和使用该散热器的LED安装结构
公开(公告)号：US20120168802A1
公开(公告)日：2012-07-05
申请号：US13387606
申请日：2010-07-29
申请人： Hideki Hirotsuru , Yosuke Ishihara , Hideo Tsukamoto
发明人： Hideki Hirotsuru , Yosuke Ishihara , Hideo Tsukamoto
IPC分类号： H01L33/60 , B32B3/02 , B32B37/14 , B32B37/02 , B05D7/00
CPC分类号： C04B35/565 , B22F2998/10 , C04B35/52 , C04B41/009 , C04B41/52 , C04B41/90 , C04B2235/3826 , C04B2235/427 , C04B2235/5427 , C04B2235/5436 , C04B2235/5472 , C22C1/1036 , C22C1/1094 , C22C26/00 , C22C29/065 , C22C29/16 , H01L33/0079 , H01L33/60 , H01L33/641 , H01L2924/0002 , Y10T428/23 , C04B38/00 , C04B35/581 , C04B35/584 , C04B35/185 , C04B41/4523 , C04B41/5155 , C04B41/4572 , C04B41/5031 , C04B41/4529 , C04B41/4574 , C04B41/5111 , C04B41/5144 , C04B41/522 , C04B41/4564 , C04B41/5116 , B22F3/04 , C23C16/00 , C25D7/12 , H01L2924/00
摘要： Provided is a wafer for LED mounting having a small difference in thermal expansion coefficient from an LED and having excellent heat conductivity, a method for manufacturing the wafer for LED mounting, and an LED-mounted structure manufactured by using the wafer for LED mounting. The wafer for LED mounting (6) is constituted of a metal infiltrated ceramic composite (61) and a protective layer (62) that is formed therearound. The metal infiltrated ceramic composite (61) preferably has a thin metal layer (63) on a surface thereof. The method for manufacturing the wafer is characterized by comprising filling at least one selected from the group consisted of porous ceramic bodies, ceramic powder compacts and ceramic powders into a tubular body made of metal or ceramic, then impregnating a metal into the void of at least one selected from the group consisted of porous ceramic bodies, ceramic powder compacts and ceramic powders, and thereafter performing a process.
摘要翻译：提供了一种用于LED安装的晶片，其具有与LED相当的热膨胀系数差并且具有优异的导热性，用于制造用于LED安装的晶片的方法，以及通过使用用于LED安装的晶片制造的LED安装结构。用于LED安装（6）的晶片由金属渗透陶瓷复合材料（61）和形成在其周围的保护层（62）构成。金属渗透性陶瓷复合体（61）的表面优选具有薄的金属层（63）。制造晶片的方法的特征在于，将从由多孔陶瓷体，陶瓷粉末压块和陶瓷粉末组成的组中选出的至少一种填充到由金属或陶瓷制成的管状体中，然后将金属浸入到至少选自由多孔陶瓷体，陶瓷粉末压块和陶瓷粉末组成的组，然后进行处理。

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