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1. 发明专利

JP2007117682A Portable simple radium bedrock bathing bed 审中-公开
标题翻译：便携式简单的放大器BEDROCK BATHING BED
公开(公告)号：JP2007117682A
公开(公告)日：2007-05-17
申请号：JP2005334897
申请日：2005-10-24
申请人： Masafumi Dobashi , Hideaki Kawamoto , Noriyuki Naramura , Hiroshi Tamaru , 政文土橋 , 秀昭川本 , 紀行楢村 , 寛田丸
发明人： DOBASHI MASAFUMI , NARAMURA NORIYUKI , TAMARU HIROSHI , KAWAMOTO HIDEAKI
IPC分类号： A61H33/00 , A61H33/10 , A61N5/06 , A61N5/10
摘要： PROBLEM TO BE SOLVED: To provide a portable simple radium base rock bath bed which wholly eliminating the need for building construction such as water supplying and draining construction or the like for easily conveying and installing an artificial base rock bath apparatus to an installation-scheduled place and equipped with a radon mist producing mechanism in order to achieve the environment of a radon bathing and a negative ion mist bathing for enhancing the healing of an incurable disease or the enhancement of living-body immunity.
SOLUTION: A bedrock unit plate is divided into three parts 2a, 2b and 2c to be fitted in the cavity of a heater unit 1. The bottom face of the bedrock unit plate is brought into face contact with the planar electric heater of the surface layer part of the heater unit 1 and heated and controlled to an arbitrary temperature by a temperature controller 1d. When the bedrock unit plate is heated properly, far infrared rays are radiated from a radium ore or the like being the constituent material of the base rock unit plate and a very small amount of α-rays, β-rays, γ-rays, etc. are further radiated.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种便携式简单的镭基础岩浴床，其完全不需要诸如供水和排水结构等的建筑施工，以便于将人造基础岩浴设备轻松地输送和安装到安装并配备了氡气生成机构，以实现氡气洗涤和负离子雾浴的环境，以增强不治之症的愈合或提高机体免疫力。解决方案：基岩单元板被分成三部分2a，2b和2c，以装配在加热器单元1的空腔中。基岩单元板的底面与平面电加热器加热器单元1的表面层部分，并通过温度控制器1d加热并控制到任意温度。当基岩单元板被适当地加热时，远红外线从作为基岩单元板的构成材料的镭矿石等以及非常少量的α射线，β射线，γ射线等照射被进一步辐射。版权所有（C）2007，JPO＆INPIT

2. 发明授权

US5810932A Plasma generating apparatus used for fabrication of semiconductor device 失效
标题翻译：用于制造半导体器件的等离子体发生装置
公开(公告)号：US5810932A
公开(公告)日：1998-09-22
申请号：US692283
申请日：1996-08-05
申请人： Yasuhiko Ueda , Hideaki Kawamoto , Hidenobu Miyamoto
发明人： Yasuhiko Ueda , Hideaki Kawamoto , Hidenobu Miyamoto
IPC分类号： H01J37/32 , H05H1/46 , H05H1/00 , C23F1/02
CPC分类号： H01J37/32082 , H01J37/3266 , H05H1/46
摘要： An apparatus for generating plasma, includes a cylindrical vacuum chamber made of dielectric substance, the chamber being open only at a bottom thereof and having a height of 50 mm or smaller, at least one antenna coil disposed around the chamber for receiving high frequency power therein, and at least one electromagnetic coil disposed around the antenna coil. The cylindrical vacuum chamber may be replaced with a plate made of a dielectric substance. The apparatus is operative to carry out photoresist using etching without leaving any residue under a high selection ratio to the photoresist. In addition, the etching product does not tend to adhere to the vacuum chamber, and it would be easy to remove etching product from the vacuum chamber, even if the product adheres to the vacuum chamber.
摘要翻译：一种用于产生等离子体的装置，包括由电介质材料制成的圆柱形真空室，该室仅在其底部开口并具有50mm或更小的高度，至少一个设置在室周围的用于在其中接收高频功率的天线线圈以及设置在天线线圈周围的至少一个电磁线圈。圆柱形真空室可以用由电介质材料制成的板代替。该设备可操作以使用蚀刻来执行光致抗蚀剂，而不会使光致抗蚀剂具有高选择比的任何残留物。此外，即使产品粘附到真空室，蚀刻产品也不会粘附到真空室，并且容易将真空室中的蚀刻产物除去。

3. 发明授权

US5698071A High speed ashing method 失效
标题翻译：高速灰化法
公开(公告)号：US5698071A
公开(公告)日：1997-12-16
申请号：US636143
申请日：1996-04-22
申请人： Hideaki Kawamoto
发明人： Hideaki Kawamoto
IPC分类号： C23F4/00 , G01Q30/16 , G01Q70/00 , G03F7/42 , H01L21/02 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3205 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , G03F7/427 , H01L21/31138
摘要： A wafer (11) is conveyed in a vacuum from an Al etching chamber after the Al etching and is fed into an ashing chamber (15) without coming into contact with the atmosphere. After the wafer (11) was conveyed, CH.sub.3 OH gas of 200 sccm is first introduced by a valve (30a) and a pressure is adjusted to 1.2 Torr. Subsequently, a microwave current of 450 mA is supplied, thereby forming a plasma. The wafer (11) is processed by a down-flow system of a CH.sub.3 OH plasma. The supply of the CH.sub.3 OH gas is stopped by closing the valve (30a). Next, oxygen gas of 400 sccm is introduced by opening a valve (30b). A microwave current of 450 mA is supplied at a pressure of 1.2 Torr, thereby forming a plasma. A resist on the wafer 11 is ashed and eliminated by a down-flow process of an oxygen plasma. By those processes, the corrosion prevention and the resist ashing can be perfectly executed.
摘要翻译：在Al蚀刻之后，晶片（11）在真空中从Al蚀刻室输送，并且进入灰化室（15）而不与大气接触。在输送晶片（11）之后，首先通过阀（30a）引入200sccm的CH 3 OH气体，并将压力调节至1.2Torr。随后，提供450mA的微波电流，从而形成等离子体。晶片（11）由CH3OH等离子体的下流系统处理。通过关闭阀（30a）来停止供应CH 3 OH气体。接下来，通过打开阀（30b）引入400sccm的氧气。在1.2Torr的压力下供给450mA的微波电流，从而形成等离子体。通过氧等离子体的下流过程，将晶片11上的抗蚀剂灰化并消除。通过这些工艺，可以完美地执行防腐蚀和抗蚀剂灰化。

4. 发明授权

US5522520A Method for forming an interconnection in a semiconductor device 失效
标题翻译：在半导体器件中形成互连的方法
公开(公告)号：US5522520A
公开(公告)日：1996-06-04
申请号：US388455
申请日：1995-02-14
申请人： Hideaki Kawamoto
发明人： Hideaki Kawamoto
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3205 , H01L21/3213 , H01L21/768 , H01L23/52 , C03C15/00 , B05D3/02 , C03C25/06
CPC分类号： H01L21/02071 , H01L21/32136 , H01L21/76838
摘要： An interconnection in a semiconductor device is made of a conductive laminate including a Ti film, a TiN film and an aluminium alloy film consecutively formed on a SiO.sub.2 film grown on a Si substrate. A heat treatment of the conductive layer is performed at 450.degree.-600.degree. C. before plasma-etching to introduce nitrogen and oxygen atoms from TiN film and SiO.sub.2 film, respectively, into the Ti film. The nitrogen and oxygen atoms prevent the side-etching of the Ti film during a plasma etching of the laminate using a plasma containing chlorine atoms. An interconnection having a high reliability is obtained with a high productivity.
摘要翻译：半导体器件中的互连由在Si衬底上生长的SiO 2膜上连续形成的Ti膜，TiN膜和铝合金膜的导电性层叠体构成。在等离子体蚀刻之前，在450℃-600℃下进行导电层的热处理，分别将TiN膜和SiO 2膜的氮和氧原子引入到Ti膜中。在使用含有氯原子的等离子体对层压体进行等离子体蚀刻期间，氮和氧原子防止了Ti膜的侧蚀刻。以高生产率获得具有高可靠性的互连。

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