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1. 发明授权

US08650710B1 Caster wheel lift and brake assembly 有权
标题翻译：脚轮提升和制动总成
公开(公告)号：US08650710B1
公开(公告)日：2014-02-18
申请号：US14032272
申请日：2013-09-20
申请人： Herbert A. Waggener
发明人： Herbert A. Waggener
IPC分类号： B60B33/00
CPC分类号： B60B33/006 , B60B33/0049 , B60B33/0057 , B60B33/0078 , B60B33/02 , B60B2200/22 , Y10T16/195 , Y10T16/218
摘要： A caster wheel assembly includes a vertical axis brake and barrier-traversing member. The caster shaft housing contains a vertically movable element with stator surface adjacent the caster wheel assembly. The barrier-traversing member with barrier contact surface is fastened to the caster wheel assembly. A braking surface member is attached to the barrier-traversing member opposite the barrier contact surface and adjacent the stator surface. In operation, the moving caster wheel assembly first contacts an obstacle with the barrier contact surface of the barrier-traversing member. The obstacle elevates the barrier-traversing member and attached braking surface member into contact with the vertically movable element of the stator surface of the caster shaft housing, thereby restraining rotation of the caster wheel assembly. Further forward movement of the rotation-restrained caster wheel assembly allows the barrier-traversing member to elevate the caster wheel, transfer load to the caster wheel, and thereby more easily traverse the obstacle.
摘要翻译：脚轮组件包括垂直轴制动器和阻挡横向构件。脚轮轴壳体包含可垂直移动的元件，其具有邻近脚轮组件的定子表面。具有阻挡接触表面的阻挡横向构件紧固到脚轮组件。制动表面构件附接到与挡板接触表面相对并且靠近定子表面的阻挡横向构件。在操作中，移动脚轮组件首先与障碍物穿过构件的阻挡接触表面接触障碍物。障碍物将阻挡横移构件和附接的制动表面构件升高成与脚轮轴壳体的定子表面的可垂直移动的元件接触，由此限制脚轮组件的旋转。旋转限制脚轮组件的进一步向前运动允许阻挡横向构件提升脚轮，将载荷传递给脚轮，从而更容易地横过障碍物。

2. 发明授权

US08539640B1 Caster wheel lift and brake assembly 有权
标题翻译：脚轮提升和制动总成
公开(公告)号：US08539640B1
公开(公告)日：2013-09-24
申请号：US13716102
申请日：2012-12-15
申请人： Herbert A. Waggener
发明人： Herbert A. Waggener
IPC分类号： B60B33/00
CPC分类号： B60B33/006 , B60B33/0049 , B60B33/0057 , B60B33/02 , B60B2200/22 , Y10T16/195 , Y10T16/218
摘要： A caster wheel assembly includes a vertical axis brake and barrier-traversing member. The caster shaft housing contains a stator surface adjacent the caster wheel assembly. The barrier-traversing member with barrier contact surface is biasedly fastened to the caster wheel assembly. A braking surface member is attached to the barrier-traversing member opposite the barrier contact surface and adjacent the stator surface. In operation, the moving caster wheel assembly first contacts an obstacle with the barrier contact surface of the barrier-traversing member. The encountered obstacle elevates the barrier-traversing member and attached braking surface member into contact with the stator surface of the caster shaft housing, thereby restraining rotation of the caster wheel assembly. Then, further forward movement of the rotation-restrained caster wheel assembly allows the barrier-traversing member to elevate the caster wheel, transfer load to the caster wheel, and thereby more easily traverse the obstacle.
摘要翻译：脚轮组件包括垂直轴制动器和阻挡横向构件。脚轮轴壳体包括邻近脚轮组件的定子表面。具有阻挡接触表面的阻挡横向构件被偏置地紧固到脚轮组件。制动表面构件附接到与挡板接触表面相对并且靠近定子表面的阻挡横向构件。在操作中，移动脚轮组件首先与障碍物穿过构件的阻挡接触表面接触障碍物。所遇到的障碍物使障碍物横动构件和附接的制动表面构件与脚轮轴壳体的定子表面接触，由此限制脚轮组件的旋转。然后，旋转限制脚轮组件的进一步前进运动允许挡板横动构件升高脚轮，将载荷传递给脚轮，从而更容易地横过障碍物。

3. 发明授权

US5879407A Wear resistant ball and socket joint 失效
标题翻译：耐磨球窝接头
公开(公告)号：US5879407A
公开(公告)日：1999-03-09
申请号：US895747
申请日：1997-07-17
申请人： Herbert A. Waggener
发明人： Herbert A. Waggener
IPC分类号： A61F2/00 , A61F2/30 , A61F2/32
CPC分类号： A61F2/30767 , A61F2/30907 , A61F2002/30016 , A61F2002/30107 , A61F2002/30354 , A61F2002/30448 , A61F2002/30649 , A61F2002/3065 , A61F2002/30673 , A61F2002/30675 , A61F2002/30685 , A61F2002/30787 , A61F2002/30878 , A61F2002/30929 , A61F2210/0009 , A61F2220/0033 , A61F2220/005 , A61F2250/0019 , A61F2310/00023 , A61F2310/00203 , A61F2310/00239 , A61F2310/00281 , A61F2310/00317 , A61F2310/00556 , A61F2310/00562 , A61F2310/00574 , A61F2310/00634 , A61F2310/00736 , A61F2310/00742 , A61F2310/00874 , A61F2310/00928
摘要： A ball and socket joint providing longevity especially suitable for use in implants in human bodies. The ball is designed to incorporate specified strength, hardness, and smoothness characteristics. The socket has a cooperating bearing surface which is less hard than that of the ball. This combination of characteristics lead to maximal mutual bearing contact which minimizes local friction and abrasion. Both components are biologically inert. One component is hydrophilic. The ball is preferably formed from a ceramic, such as a metal or silicon oxide or carbide. The socket preferably has a noble metal alloy liner partially surrounding the ball. The socket further includes an insulator isolating the liner from the socket structural member, should the latter be formed from a different metal. The liner can be formed in complementary segments to avoid fracture or splitting. The liner is either mechanically entrapped by the socket structural member or is adhered thereto. The novel ball and socket joint minimizes wear and chemical, electrochemical, and mechanical deterioration in the environment of the human body.
摘要翻译：提供寿命长的球窝接头，特别适用于人体植入物。球被设计成结合规定的强度，硬度和平滑度特性。插座具有协作的支承表面，其不如球的那些硬。这种特性的组合导致最大的相互承受接触，从而最小化局部摩擦和磨损。两种组分都是生物惰性的。一个组分是亲水的。该球优选由诸如金属或氧化硅或碳化物的陶瓷形成。插座优选地具有部分围绕球的贵金属合金衬套。插座还包括将衬垫与插座结构构件隔离的绝缘体，如果后者由不同的金属形成。内衬可以形成互补的部分，以避免断裂或分裂。衬套或机械地被插座结构件截留或粘附到其上。新颖的球窝接头可最大限度地减少人体环境中的磨损和化学，电化学和机械性变差。

4. 发明授权

US5020083A X-ray masks, their fabrication and use 失效
标题翻译： X光掩模，其制造和使用
公开(公告)号：US5020083A
公开(公告)日：1991-05-28
申请号：US354408
申请日：1989-05-19
申请人： Martin P. Lepselter , Herbert A. Waggener
发明人： Martin P. Lepselter , Herbert A. Waggener
IPC分类号： G03F1/00 , G03F1/22 , G21K1/10
CPC分类号： G03F1/22 , G21K1/10
摘要： An X-ray mask for manufacturing chips is produced by forming an X-ray transparent semiconductor membrane with gaps and including X-ray transparent material in the gaps. In one embodiment the opaque material is formed by sputtering Pt onto the semiconductor material to form Pt silicides in the gaps. In another embodiment the semiconductor material is exposed to W in a silane mixture and the W replaces the semiconductor material so that the W projects into the material.
摘要翻译：通过在间隙中形成具有间隙的X射线透明半导体膜并且包括X射线透明材料来制造用于制造芯片的X射线掩模。在一个实施例中，通过将Pt溅射到半导体材料上以在间隙中形成Pt硅化物来形成不透明材料。在另一个实施例中，半导体材料以硅烷混合物暴露于W，并且W代替半导体材料，使得W投射到材料中。

5. 发明授权

US4932872A Method for fabricating X-ray masks 失效
标题翻译： X射线掩模的制造方法
公开(公告)号：US4932872A
公开(公告)日：1990-06-12
申请号：US366937
申请日：1989-06-16
申请人： Herbert A. Waggener
发明人： Herbert A. Waggener
IPC分类号： G03F1/22
CPC分类号： G03F1/22 , Y10S148/135
摘要： In the disclosed method, an X-ray mask is made by forming a semiconductor wafer having a first coefficient of expansion, doping a surface of the wafer, metallizing the wafer, metallizing a washer shaped ring having a lower coefficient of expansion, bonding the ring to the doped surface at the periphery of the wafer at or above room temperature, and processing the wafer by removing the undoped substrate and depositing metallic material on the wafer.
摘要翻译：在所公开的方法中，通过形成具有第一膨胀系数的半导体晶片，掺杂晶片的表面，金属化晶片，金属化具有较低膨胀系数的垫圈形环，形成X射线掩模，在室温或高于室温的晶圆周边处的掺杂表面，并且通过去除未掺杂的衬底并在金属晶片上沉积金属材料来处理晶片。

6. 发明授权

US4733823A Silicon nozzle structures and method of manufacture 失效
标题翻译：硅喷嘴结构及其制造方法
公开(公告)号：US4733823A
公开(公告)日：1988-03-29
申请号：US922643
申请日：1986-10-24
申请人： Herbert A. Waggener , Joseph C. Zuercher
发明人： Herbert A. Waggener , Joseph C. Zuercher
IPC分类号： B41J2/16 , A62C31/02 , G01D15/18
CPC分类号： B41J2/1629 , B41J2/162 , B41J2/1631 , B41J2/1632 , B41J2/1642
摘要： A nozzle structure in a crystallographically oriented, monocrystalline silicon includes a pyramidal opening anisotropically etched from the entrance side of the nozzle and truncated in a membrane having a smaller cross-section than the initial cross-section of the entrance opening. The membrane has extending therethrough a pyramidal opening etched anisotropically from the exit side. The vertical axes of both openings are substantially concentric.
摘要翻译：晶体学取向的单晶硅中的喷嘴结构包括从喷嘴的入口侧各向异性地蚀刻的截锥形截面，其横截面比入口的初始横截面小。膜从其出口侧各向异性地蚀刻成金字塔形开口。两个开口的垂直轴基本上是同心的。

7. 发明授权

US5573732A Method and apparatus for sterilizing medical devices using glow discharges 失效
标题翻译：使用辉光放电对医疗器械进行消毒的方法和装置
公开(公告)号：US5573732A
公开(公告)日：1996-11-12
申请号：US302621
申请日：1994-09-08
申请人： Herbert A. Waggener , Kazimierz Przydzial
发明人： Herbert A. Waggener , Kazimierz Przydzial
IPC分类号： A61L2/14 , B01J19/08
CPC分类号： A61L2/14 , Y10S422/907
摘要： A medical device having a regular or irregular shape is sterilized in a sterilizing apparatus comprising a means for moveably supporting the medical device, and a electrode having an anode tip at one end thereof which is positioned to form a gap with a predetermined length between the anode tip and the medical device. To sterilize a portion of an outer surface of the medical device at the anode tip of the electrode, predetermined first and second voltages are applied to the anode tip and the medical device, respectively. The voltage and current applied to the anode tip and the medical device are raised to predetermined values to provide a voltage differential across the gap to form a glow discharge adjacent the outer surface of the medical device for sterilizing the outer surface of the medical device. The entire outer surface around the medical device is sterilized by, for example, positioning a plurality of energized electrodes around the medical device to form a continuous band of glow discharges around the medical device. A length of the medical device can be sterilized by moving the medical device and the anode tips of the electrodes relative to each other while forming a sequence of overlapping glow discharges both along a predetermined length and around the outer surface of the medical device.
摘要翻译：具有规则或不规则形状的医疗装置在包括用于可移动地支撑医疗装置的装置的消毒装置中灭菌，以及在其一端具有阳极尖端的电极，该电极被定位成在阳极之间形成预定长度的间隙尖端和医疗设备。为了在电极的阳极端部对医疗器械的外表面的一部分进行消毒，预定的第一和第二电压分别施加到阳极尖端和医疗装置。施加到阳极尖端和医疗装置的电压和电流升高到预定值，以在间隙上提供电压差，以在医疗装置的外表面附近形成辉光放电，用于对医疗装置的外表面进行消毒。医疗装置周围的整个外表面通过例如在医疗装置周围定位多个通电电极来消毒，以在医疗装置周围形成连续的辉光放电带。可以通过相对于彼此移动医疗装置和电极的阳极尖端，同时沿着预定长度和医疗装置的外表面形成一系列重叠的辉光放电来消毒医疗装置的长度。

8. 发明授权

US4317276A Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer 失效
标题翻译：因此，在硅晶片中制造绝缘栅场效应晶体管的方法
公开(公告)号：US4317276A
公开(公告)日：1982-03-02
申请号：US158680
申请日：1980-06-12
申请人： Richard H. Heeren , Herbert A. Waggener
发明人： Richard H. Heeren , Herbert A. Waggener
IPC分类号： H01L29/78 , H01L21/033 , H01L21/225 , H01L21/336 , H01L21/283
CPC分类号： H01L29/66606 , H01L21/033 , Y10S438/981
摘要： A method of manufacturing a device in a wafer with a P-type semiconductor, includes forming on a surface of the semiconductor body a layer of silicon dioxide doped with an N-type dopant. The portion of the doped silicon dioxide covering the interconnect work site area is removed and a masking layer of an oxidation impervious medium is formed over the wafer and thereafter removed from the field areas, as is the doped silicon dioxide layer. A thin layer of gate oxide is formed over the field areas. A layer of conductive polysilicon is formed over the entire wafer followed by a layer of oxygen impervious masking medium. The conductive polysilicon and masking medium layers are removed from all areas of the wafer except those whereat transistors are to be formed. The wafer is exposed to an oxidizing environment under an elevated temperature producing a field oxide over the exposed gate oxide. The elevated temperature of this operation drives the dopant in the doped silicon oxide layer into the semiconductor body forming doped source/drain regions and doped first level conductor runs. Thereafter the masking medium covering the interconnect work site area is removed and the work site area diffused with an N-type dopant. Finally, second level conductor runs are formed on the wafer.
摘要翻译：在具有P型半导体的晶片中制造器件的方法包括在半导体本体的表面上形成掺杂有N型掺杂剂的二氧化硅层。去除覆盖互连工作区域的掺杂二氧化硅的部分，并且在晶片上形成不透氧介质的掩蔽层，然后从场区域去除掺杂二氧化硅层。在场区域上形成薄层的栅极氧化物。在整个晶片上形成一层导电多晶硅，随后是一层不透氧的掩蔽介质。导电多晶硅和掩模介质层除晶体管将要形成的那些外，从晶圆的所有区域去除。晶片在升高的温度下暴露于氧化环境，在暴露的栅极氧化物上产生场氧化物。该操作的升高的温度将掺杂的氧化硅层中的掺杂剂驱动到形成掺杂的源极/漏极区域和掺杂的一级导体的半导体本体中。此后，覆盖互连工作区域的掩蔽介质被去除，工作区域用N型掺杂剂扩散。最后，在晶片上形成第二级导体。

9. 发明授权

US5644137A Stabilizing support mechanism for electron beam apparatus 失效
标题翻译：电子束装置稳定支撑机构
公开(公告)号：US5644137A
公开(公告)日：1997-07-01
申请号：US610749
申请日：1996-03-04
申请人： Herbert A. Waggener , Kurt Werder
发明人： Herbert A. Waggener , Kurt Werder
IPC分类号： H01J37/20 , G01B9/02
CPC分类号： H01J37/20 , H01J2237/20292
摘要： An electron beam apparatus is provided with a support mechanism upon which X and Y axis interferometers are mounted within a vacuum chamber. By employing a flat ring of a low coefficient of thermal expansion glass ceramic composition affixed beneath the chamber upper wall and to which the interferometers are mounted, the normal extremes of vacuum and heat as existing within the chamber are resisted to insure of a fixed horizontal alignment of the beams as projected by the interferometers during operation of the apparatus. Flexure mounts are included for the interferometer ring together with a magnetic shield disposed adjacent the ring undersurface. Stability of workpieces is further enhanced by the use of the same glass ceramic composition in the formation of the carrier and its reference plate of the apparatus.
摘要翻译：电子束装置设置有支撑机构，X和Y轴干涉仪安装在该支撑机构的真空室内。通过使用固定在室上壁下方并且安装干涉仪的低热膨胀系数的玻璃陶瓷组合物的平环，存在于室内的正常的真空和热量极限被抵抗以确保固定的水平对准在设备操作期间由干涉仪投射的光束。干涉仪环包括挠性支架以及邻近环形下表面设置的磁屏蔽。通过使用相同的玻璃陶瓷组合物形成载体及其参考板，进一步提高了工件的稳定性。

10. 发明授权

US4485553A Method for manufacturing an integrated circuit device 失效
标题翻译：集成电路装置的制造方法
公开(公告)号：US4485553A
公开(公告)日：1984-12-04
申请号：US508314
申请日：1983-06-27
申请人： Raymond R. Christian , Harry Sue , Herbert A. Waggener , Joseph C. Zuercher
发明人： Raymond R. Christian , Harry Sue , Herbert A. Waggener , Joseph C. Zuercher
IPC分类号： H01L21/02 , H01L21/301 , H01L21/304 , H01L21/48 , H01L21/52 , H01L21/58 , H01L21/60 , H01L21/78 , H01L21/822 , H01L23/14 , H01L23/482 , H01L27/04 , H01L27/12 , H01L21/95
CPC分类号： H01L21/78 , H01L21/4803 , H01L21/76897 , H01L23/147 , H01L23/4825 , H01L24/11 , H01L24/33 , H01L24/83 , H01L2224/13099 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01033 , H01L2924/01078 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , Y10S438/975
摘要： An integrated circuit 14 having an active circuit 19 is formed on a circuit wafer 10. A moat 18 in the field oxide 20 surrounds the active circuit 19. Metallic conductor 30 passes from a location on the active circuit 19 over the moat 18 to a contact area 22. The wafer 10 is covered with a photoshaped silicon nitride layer 18, and a support wafer 40 is secured with adhesive 46 to the circuit side of the circuit wafer 10. The circuit wafer 10 is photoshaped to expose the metallic conductor 30 at the contact area 22, and the contact area 22 is prepared with multiple metal layers 62, 66, 70 for connection to external wiring.
摘要翻译：具有有源电路19的集成电路14形成在电路晶片10上。场氧化物20中的护城河18围绕有源电路19.金属导体30从护套18上的有源电路19上的位置通过触点晶片10被光电氮化硅层18覆盖，并且用粘合剂46将支撑晶片40固定到电路晶片10的电路侧。电路晶片10被成形为在金属导体30处露出金属导体30 接触区域22和接触区域22制备有用于连接到外部布线的多个金属层62,66,70。

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