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1. 发明授权

US08907553B2 Cold field electron emitters based on silicon carbide structures 有权
标题翻译：基于碳化硅结构的冷场电子发射体
公开(公告)号：US08907553B2
公开(公告)日：2014-12-09
申请号：US13569245
申请日：2012-08-08
申请人： Fred Sharifi , Myung-Gyu Kang , Henri Lezec
发明人： Fred Sharifi , Myung-Gyu Kang , Henri Lezec
IPC分类号： H01J9/02 , H01J1/00 , H01J1/304
CPC分类号： H01J1/3044 , B82Y30/00 , B82Y40/00 , B82Y99/00 , C25F3/02 , H01J1/304 , H01J1/3046 , H01J9/022 , H01J9/025 , H01J2201/3048 , H01J2201/30484 , Y10S977/814 , Y10S977/888 , Y10S977/939
摘要： A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
摘要翻译：描述了能够以与热源相当的水平发射的冷阴极场致发射电子源。在宏观发射极阵列中证明了在7.5V /μm下超过6A / cm 2的发射。发射极由具有均匀分布的发射部位的单片和刚性多孔半导体纳米结构组成，并通过允许控制发射特性的室温工艺制造。这些电子源可用于广泛的应用，包括微波电子学和医学和安全性的x射线成像。

2. 发明授权

US5256579A Tunable-frequency Gunn diodes fabrication with focused ion beams 失效
标题翻译：具有聚焦离子束的可调频耿氏二极管制造
公开(公告)号：US5256579A
公开(公告)日：1993-10-26
申请号：US332695
申请日：1989-04-03
申请人： Henri Lezec , Khalid Ismail
发明人： Henri Lezec , Khalid Ismail
IPC分类号： H01L21/265 , H01L47/02
CPC分类号： H01L21/26546 , H01L47/02 , H01L47/026 , Y10S438/90
摘要： A tunable-frequency Gunn diode which is fabricated using focused ion beam inplantation to vary the doping profile of the diode along the drift path between cathode and anode. A gated device is also described. In this variation, a graded or tapered Gunn diode is combined with one or more Schottky barrier gates. At fixed ohmic contact bias, the frequency of oscillation of the device current can be controlled by varying the gate voltage(s).
摘要翻译：一种可调谐的耿氏二极管，其采用聚焦离子束入射制造，以改变二极管沿着阴极和阳极之间的漂移路径的掺杂分布。还描述了门控装置。在这种变化中，渐变或渐缩的耿氏二极管与一个或多个肖特基势垒门组合。在固定的欧姆接触偏置下，可以通过改变栅极电压来控制器件电流的振荡频率。

3. 发明授权

US06926935B2 Proximity deposition 有权
标题翻译：接近沉积
公开(公告)号：US06926935B2
公开(公告)日：2005-08-09
申请号：US10607814
申请日：2003-06-27
申请人： Jason Harrison Arjavac , Liang Hong , Henri Lezec , Craig Matthew Henry , John Anthony Notte, IV
发明人： Jason Harrison Arjavac , Liang Hong , Henri Lezec , Craig Matthew Henry , John Anthony Notte, IV
IPC分类号： C23C16/48 , C23C16/04 , H01J37/317 , H01L21/302 , C23C14/30
CPC分类号： C23C16/486 , C23C16/047 , C23C16/487 , H01J37/3178 , H01J2237/3142 , H01J2237/31732 , H01J2237/3174 , H01J2237/31744
摘要： The present invention provides methods for achieving substantially damage-free material deposition using charged particle (e.g., ion, electron) or light beams for generating secondary electrons to induce deposition in a gas deposition material. Among other things, some of the methods can be used to deposit, with satisfactory throughput, a protective layer over a semiconductor feature without significantly altering the feature thereby preserving it for accurate measurement. In one embodiment, the beam is directed onto an electron-source surface next to the target surface but not within it. The beam is scanned on the electron-source surface causing secondary electrons to be emitted from the electron-source surface and enter the region over the target surface to interact with deposition gas for depositing a desired amount of material onto the target surface. In this way, materials can be deposited onto a the target surface at a suitably high rate without having to expose the target surface, itself, to the beam being used to perform the material deposition. In another embodiment, the beam is directed onto a separate electron generating surface (preferably one that has a relatively high secondary electron emission coefficient) proximal to the target surface for generating the electrons to deposit the deposition material onto the target surface.
摘要翻译：本发明提供了使用带电粒子（例如离子，电子）或用于产生二次电子以在气体沉积材料中产生沉积的光束实现基本上无损材料沉积的方法。除其他之外，一些方法可以用于以令人满意的生产量沉积半导体特征上的保护层，而不显着改变特征，从而保留其用于精确测量。在一个实施例中，光束被引导到邻近目标表面但不在其内的电子源表面上。光束在电子 - 源表面上被扫描，导致二次电子从电子 - 源表面发射并进入目标表面上的区域与沉积气体相互作用，以将期望量的材料沉积到目标表面上。以这种方式，可以以适当高的速率将材料沉积到目标表面上，而不必将目标表面本身暴露于用于进行材料沉积的光束。在另一个实施例中，光束被引导到靠近目标表面的单独的电子产生表面（优选具有相对高的二次电子发射系数），用于产生电子以将沉积材料沉积到目标表面上。

4. 发明授权

US07925122B2 Slot waveguide for color display 有权
标题翻译：槽波导用于彩色显示
公开(公告)号：US07925122B2
公开(公告)日：2011-04-12
申请号：US12215330
申请日：2008-06-25
申请人： Kenneth A. Diest , Jennifer A. Dionne , Harry A. Atwater , Henri Lezec
发明人： Kenneth A. Diest , Jennifer A. Dionne , Harry A. Atwater , Henri Lezec
IPC分类号： G02F1/01
CPC分类号： G02F1/035 , G02F1/133516 , G02F2001/213 , G02F2202/20 , G02F2202/42 , G02F2203/055 , G02F2203/10 , G02F2203/34
摘要： A slot waveguide utilized as a color-selecting element. The slot waveguide includes a first layer of plasmon supporting material, the first layer being optically opaque and having an input slit extending through the first layer; a second layer of plasmon supporting material facing the first layer and separated from the first layer by a first distance in a first direction, the second layer being optically opaque and having an output slit extending through the second layer and separated from the input slit by a second distance extending along a second direction differing from first direction; a dielectric layer interposed between the first layer and the second layer, the dielectric layer having a real or complex refractive index; and a power source electrically coupled to the first layer and the second layer to apply an electrical signal for modulation of the real or complex refractive index of the dielectric layer.
摘要翻译：用作选色元件的槽波导。槽波导包括第一层等离子体支撑材料层，第一层是光学不透明的并且具有延伸穿过第一层的输入狭缝; 第二层等离子体支撑材料面向第一层并且在第一方向上与第一层分离第一距离，第二层是光学不透明的，并且具有延伸穿过第二层并且与输入狭缝分离的输出狭缝沿着与第一方向不同的第二方向延伸的第二距离; 介于所述第一层和所述第二层之间的电介质层，所述电介质层具有实际或复合折射率; 以及电耦合到第一层和第二层的电源，以施加用于调制电介质层的实际或复合折射率的电信号。

5. 发明申请

US20130187532A1 COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES 有权
标题翻译：基于碳化硅结构的冷场电子发射体
公开(公告)号：US20130187532A1
公开(公告)日：2013-07-25
申请号：US13569245
申请日：2012-08-08
申请人： Fred Sharifi , Myung-Gyu Kang , Henri Lezec
发明人： Fred Sharifi , Myung-Gyu Kang , Henri Lezec
IPC分类号： H01J1/304 , C25F3/02
CPC分类号： H01J1/3044 , B82Y30/00 , B82Y40/00 , B82Y99/00 , C25F3/02 , H01J1/304 , H01J1/3046 , H01J9/022 , H01J9/025 , H01J2201/3048 , H01J2201/30484 , Y10S977/814 , Y10S977/888 , Y10S977/939
摘要： A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
摘要翻译：描述了能够以与热源相当的水平发射的冷阴极场致发射电子源。在宏观发射极阵列中证明了在7.5V / m时超过6A / cm 2的发射。发射极由具有均匀分布的发射部位的单片和刚性多孔半导体纳米结构组成，并通过允许控制发射特性的室温工艺制造。这些电子源可用于广泛的应用，包括微波电子学和医学和安全性的x射线成像。

6. 发明申请

US20100002979A1 Slot waveguide for color display 有权
标题翻译：槽波导用于彩色显示
公开(公告)号：US20100002979A1
公开(公告)日：2010-01-07
申请号：US12215330
申请日：2008-06-25
申请人： Kenneth A. Diest , Jennifer A. Dionne , Harry A. Atwater , Henri Lezec
发明人： Kenneth A. Diest , Jennifer A. Dionne , Harry A. Atwater , Henri Lezec
IPC分类号： G02F1/035 , G02B6/10
CPC分类号： G02F1/035 , G02F1/133516 , G02F2001/213 , G02F2202/20 , G02F2202/42 , G02F2203/055 , G02F2203/10 , G02F2203/34
摘要： A slot waveguide utilized as a color-selecting element. The slot waveguide includes a first layer of plasmon supporting material, the first layer being optically opaque and having an input slit extending through the first layer; a second layer of plasmon supporting material facing the first layer and separated from the first layer by a first distance in a first direction, the second layer being optically opaque and having an output slit extending through the second layer and separated from the input slit by a second distance extending along a second direction differing from first direction; a dielectric layer interposed between the first layer and the second layer, the dielectric layer having a real or complex refractive index; and a power source electrically coupled to the first layer and the second layer to apply an electrical signal for modulation of the real or complex refractive index of the dielectric layer.
摘要翻译：用作选色元件的槽波导。槽波导包括第一层等离子体支撑材料层，第一层是光学不透明的并且具有延伸穿过第一层的输入狭缝; 第二层等离子体支撑材料面向第一层并且在第一方向上与第一层分离第一距离，第二层是光学不透明的，并且具有延伸穿过第二层并且与输入狭缝分离的输出狭缝沿着与第一方向不同的第二方向延伸的第二距离; 介于所述第一层和所述第二层之间的电介质层，所述电介质层具有实际或复合折射率; 以及电耦合到第一层和第二层的电源，以施加用于调制电介质层的实际或复合折射率的电信号。

7. 发明申请

US20080097621A1 GRAPHICAL AUTOMATED MACHINE CONTROL AND METROLOGY 有权
标题翻译：图形自动化机器控制和计量学
公开(公告)号：US20080097621A1
公开(公告)日：2008-04-24
申请号：US11932640
申请日：2007-10-31
申请人： DAVID TASKER , HENRI LEZEC , DAVID HEAD
发明人： DAVID TASKER , HENRI LEZEC , DAVID HEAD
IPC分类号： G05B15/02 , G06F3/048 , G05B13/02
CPC分类号： G05B19/40933 , G01N1/286 , G05B2219/36314 , G05B2219/36317 , G05B2219/36325 , H01J37/28 , H01J37/3023 , H01J37/3056 , H01J2237/2813 , H01J2237/30416 , H01J2237/30483 , H01J2237/31713 , H01J2237/31745 , H01J2237/31749 , Y02P90/265
摘要： A graphical programming system allows a user to place geometric shapes onto a scaled image, the shape having associated behavior that operates on the image or on the object of which the image is formed. In a preferred embodiment, the shapes are objects in the Visio program by Microsoft Corporation. The shapes are dragged from a stencil onto an image provided by ion beam or electron microscope image. The shape invokes software or hardware to locate and measure features on the image or to perform operations, such as ion beam milling, on the object that is imaged.
摘要翻译：图形编程系统允许用户将几何形状放置在缩放的图像上，该形状具有对图像或其形成图像的对象进行操作的相关联的行为。在优选实施例中，形状是Microsoft Corporation在Visio程序中的对象。将形状从模板拖到由离子束或电子显微镜图像提供的图像上。形状调用软件或硬件来定位和测量图像上的特征，或者对被成像的对象执行诸如离子束铣削的操作。

8. 发明申请

US20050188309A1 Graphical automated machine control and metrology 有权
公开(公告)号：US20050188309A1
公开(公告)日：2005-08-25
申请号：US11115751
申请日：2005-04-27
申请人： David Tasker , Henri Lezec , David Head
发明人： David Tasker , Henri Lezec , David Head
IPC分类号： G06T1/00 , G01Q60/00 , G05B19/4093 , G06F3/00 , G06T3/00 , G09G5/00
CPC分类号： G05B19/40933 , G01N1/286 , G05B2219/36314 , G05B2219/36317 , G05B2219/36325 , H01J37/28 , H01J37/3023 , H01J37/3056 , H01J2237/2813 , H01J2237/30416 , H01J2237/30483 , H01J2237/31713 , H01J2237/31745 , H01J2237/31749 , Y02P90/265
摘要： A graphical programming system allows a user to place geometric shapes onto a scaled image, the shape having associated behavior that operates on the image or on the object of which the image is formed. In a preferred embodiment, the shapes are objects in the Visio program by Microsoft Corporation. The shapes are dragged from a stencil onto an image provided by ion beam or electron microscope image. The shape invokes software or hardware to locate and measure features on the image or to perform operations, such as ion beam milling, on the object that is imaged.

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