专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08531771B2 LED light source with collimation optics 有权
标题翻译：具有准直光学的LED光源
公开(公告)号：US08531771B2
公开(公告)日：2013-09-10
申请号：US12564371
申请日：2009-09-22
申请人： Steffen Reichel , Ralf Biertuempfel , Helge Vogt
发明人： Steffen Reichel , Ralf Biertuempfel , Helge Vogt
IPC分类号： G02B1/00
CPC分类号： G02B3/0031 , G02B3/0056
摘要： The invention relates to a LED light source comprising a preferably aspheric glass lens having an aspect ratio of more than 0.1.
摘要翻译：本发明涉及一种LED光源，其包括具有大于0.1的纵横比的优选非球面玻璃透镜。

2. 发明授权

US5496586A Process and device for coating the inner surface of greatly arched, essentially dome-shaped substrate by CVD 失效
标题翻译：通过CVD涂覆大拱形基本圆顶形基底的内表面的方法和装置
公开(公告)号：US5496586A
公开(公告)日：1996-03-05
申请号：US141656
申请日：1993-10-26
申请人： Ewald Mo/ rsen , Helge Vogt , Johannes Segner
发明人： Ewald Mo/ rsen , Helge Vogt , Johannes Segner
IPC分类号： C23C16/44 , C03C17/00 , C23C16/04 , C23C16/455 , C23C16/50 , C23C16/511 , C23C16/515 , B05D3/06
CPC分类号： C23C16/455 , C03C17/004 , C23C16/045
摘要： A process for coating the inner surface of a greatly arched, essentially dome-shaped substrate by CVD is described wherein reaction gases, which contain layer-former molecules, are conveyed into a reaction chamber containing the substrate(s) to be coated. The reaction gases are conveyed through at least one gas inlet, placed facing the vertex of the dome at a distance from the surface to be coated. Deposition of the layer material on the substrate is brought about by producing a reaction zone on the inner surface of the substrate to be coated. The reaction gases do not, as is usual for known processes, flow slowly into the reaction chamber. Instead, for production of a uniform coating, the reaction gases are introduced at a high speed such that the product of Reynolds number, R, of the gas jet in or in the immediate vicinity of the gas inlet and the distance, h, between the gas inlet and the dome vertex is 400
摘要翻译：描述了通过CVD涂覆大拱形基本圆顶形基底的内表面的方法，其中含有成层分子的反应气体被输送到含有待涂覆的基底的反应室中。反应气体通过至少一个气体入口输送，该气体入口面向与待涂覆表面相距一定距离的圆顶顶点。通过在待涂布的基材的内表面上产生反应区而使层材料沉积在基材上。如已知方法通常，反应气体不会缓慢流入反应室。相反，为了生产均匀的涂层，反应气体以高速引入，使得气体射流的雷诺数R的乘积在气体入口处或紧邻气体入口处的距离h和气体入口和圆顶顶点为400

3. 发明授权

US5300901A Arrangement for coupling in of microwave energy 失效
标题翻译：微波能量联结布置
公开(公告)号：US5300901A
公开(公告)日：1994-04-05
申请号：US910879
申请日：1992-07-10
申请人： Harald Krummel , Ewald Morsen , Helge Vogt , Gunter Weidmann
发明人： Harald Krummel , Ewald Morsen , Helge Vogt , Gunter Weidmann
IPC分类号： H01J23/20 , H01J37/32 , H01P1/28 , H01P1/30 , H01P3/06 , H01P5/02 , H01P5/08 , H01P5/103 , H01P7/04 , H05H1/46
CPC分类号： H05H1/46 , H01J37/32 , H01P5/02 , H01P5/103
摘要： An arrangement for coupling microwave energy with a reaction chamber, including electrically stable tuning and being, within limits, tolerant against changes in critical dimensions and power fluctuations. A coaxial line between a hollow waveguide and the reaction chamber is of such a structure that it forms, at least together with the reaction chamber, a loss resonator for the microwave frequency employed. The coaxial line can comprise an absorber or, alternatively, can be made of a poorly conductive material. There is also the possibility of downgrading the quality of the resonator by leaving an annular gap between a metal plate and an outer conductor section.
摘要翻译：用于将微波能量与反应室耦合的装置，包括电稳定的调谐并且在限度内容许关键尺寸和功率波动的变化。中空波导和反应室之间的同轴线具有至少与反应室一起形成用于所用微波频率的损耗谐振器的结构。同轴线可以包括吸收体，或者可以由导电性差的材料制成。也可能通过在金属板和外部导体部分之间留下环形间隙来降低谐振器的质量。

4. 发明申请

US20100091490A1 LED light source with collimation optics 有权
标题翻译：具有准直光学的LED光源
公开(公告)号：US20100091490A1
公开(公告)日：2010-04-15
申请号：US12564371
申请日：2009-09-22
申请人： Steffen Reichel , Ralf Biertuempfel , Helge Vogt
发明人： Steffen Reichel , Ralf Biertuempfel , Helge Vogt
IPC分类号： F21V1/00 , B29D11/00
CPC分类号： G02B3/0031 , G02B3/0056
摘要： The invention relates to a LED light source comprising a preferably aspheric glass lens having an aspect ratio of more than 0.1.
摘要翻译：本发明涉及一种LED光源，其包括具有大于0.1的纵横比的优选非球面玻璃透镜。

5. 发明授权

US06899954B2 Cadmium-free optical steep edge filters 失效
标题翻译：无镉光陡边滤波器
公开(公告)号：US06899954B2
公开(公告)日：2005-05-31
申请号：US10224153
申请日：2002-08-20
申请人： Uwe Kolberg , Helge Vogt , Simone Ritter , Burkhard Speit , Hans-Werner Schock , Christine Köble , Raymund Schäffler
发明人： Uwe Kolberg , Helge Vogt , Simone Ritter , Burkhard Speit , Hans-Werner Schock , Christine Köble , Raymund Schäffler
IPC分类号： G02B5/22 , C03C3/32 , C03C17/02 , C03C17/22 , C03C17/34 , C23C14/06 , C23C14/54 , B32B9/00
CPC分类号： C23C14/0623 , C03C3/321 , C03C17/02 , C23C14/548 , Y10T428/12493 , Y10T428/12896 , Y10T428/12903
摘要： A cadmium-free optical steep edge filter comprising I-III-VI compound semiconductor systems of stoichiometric or non-stoichiometric composition, where the I-III-VI compound semiconductors are systems with one or more of the following elements: for the univalent (I) elements: Cu, Ag for the tervalent (III) elements: Al, In, Ga for the hexavalent (VI) elements: S, Se, Te.
摘要翻译：包含化学计量或非化学计量组成的I-III-VI化合物半导体系统的无镉光陡边缘滤光器，其中I-III-VI化合物半导体是具有一个或多个以下元素的体系：对于一价（I ）元素：三价（III）元素的Cu，Ag：六价（Ⅵ）元素的Al，In，Ga：S，Se，Te。

6. 发明授权

US5308650A Process and apparatus for the ignition of CVD plasmas 失效
标题翻译： CVD等离子体点火的工艺和装置
公开(公告)号：US5308650A
公开(公告)日：1994-05-03
申请号：US909366
申请日：1992-07-06
申请人： Harald Krummel , Ewald Morsen , Volker Paquet , Helge Vogt , Gunther Weidmann
发明人： Harald Krummel , Ewald Morsen , Volker Paquet , Helge Vogt , Gunther Weidmann
IPC分类号： C23C4/00 , C23C16/50 , C23C16/511 , C23C16/515 , H01J37/32 , H01L21/31 , H05B7/18 , H05H1/24 , H05H1/46 , C23C14/24
CPC分类号： H01J37/32192 , H01J37/32009 , H05H1/46 , H01J2237/3321
摘要： A process and an apparatus for economically igniting microwave plasmas wherein no undesirable reaction products in the reaction chamber impair the quality of cladding produced thereby. The plasma is ignited on the gas outlet side of the reaction chamber by means of a high voltage that is applied at least for a short period of time. High-frequency pulses or low-frequency high voltages with frequencies in the range from 10 to 100 kHz are utilized. The high voltage is synchronized with the microwave pulses. According to a further process, the microwave pulses are excessively increased for a short time at least at their beginning. Also periodic excessive increases of the microwave pulses are possible A switchable high-voltage source is connected by way of a delay member and a current supply unit to the microwave device The output of the switchable high-voltage source is applied to the gas discharge line of the reaction chamber.
摘要翻译：用于经济地点燃微波等离子体的方法和装置，其中在反应室中没有不期望的反应产物损害由此产生的包层的质量。等离子体通过至少施加短时间的高电压在反应室的气体出口侧点燃。使用频率在10到100 kHz范围内的高频脉冲或低频高电压。高电压与微波脉冲同步。根据进一步的处理，微波脉冲至少在其开始时，在短时间内过度增加。微波脉冲的周期性过度增加也可以通过延迟构件和电流供给单元将可切换高压源连接到微波装置。可切换高压源的输出被施加到反应室。

7. 发明授权

US5503677A Process and device for coating the inner surface of greatly arched, essentially dome-shaped substrates by CVD 失效
标题翻译：用于通过CVD涂覆大拱形的，基本上圆顶形的衬底的内表面的工艺和装置
公开(公告)号：US5503677A
公开(公告)日：1996-04-02
申请号：US340910
申请日：1994-11-15
申请人： Ewald Morsen , Helge Vogt , Johannes Segner
发明人： Ewald Morsen , Helge Vogt , Johannes Segner
IPC分类号： C23C16/44 , C03C17/00 , C23C16/04 , C23C16/455 , C23C16/50 , C23C16/511 , C23C16/515 , C23C16/00
CPC分类号： C23C16/455 , C03C17/004 , C23C16/045
摘要： A process and a device for coating the inner surface of a greatly arched, essentially dome-shaped substrate by CVD are described. In the process, the reaction gases, which contain the layer-former molecules, are conveyed into the reaction chamber containing the substrate(s) to be coated, through at least one gas inlet, placed facing the vertex of the dome at a distance from the surface to be coated. Deposition of the layer material on the substrate is brought about in a way known in the art by producing a reaction zone on the inner surface of the substrate to be coated. According to the invention, the reaction gases do not, as is usual for known processes, flow slowly into the reaction chamber. Instead, for production of a uniform coating, the reaction gases are introduced into the reaction chamber at a high speed such that the product of Reynolds number, R, of the gas jet in or in the immediate vicinity of the gas inlet and the distance, h, between the gas inlet and the dome vertex is:400
摘要翻译：描述了通过CVD涂覆大拱形基本圆顶形基底的内表面的方法和装置。在此过程中，将包含成层分子的反应气体通过至少一个气体入口输送到含有待涂覆的基材的反应室中，该入口面向圆顶顶点放置一定距离待涂层的表面。通过在待涂覆的基材的内表面上产生反应区，以本领域已知的方式使层材料沉积在基材上。根据本发明，如已知方法通常，反应气体不会缓慢地流入反应室。相反，为了生产均匀的涂层，反应气体以高速被引入反应室，使得在气体入口处或其附近的气体射流的雷诺数R的乘积和距离， h，气体入口和圆顶顶点之间为：400

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式