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    • 10. 发明授权
    • Porous semiconductive film and process for its production
    • 多孔半导体膜及其生产工艺
    • US08043909B2
    • 2011-10-25
    • US12053369
    • 2008-03-21
    • André EbbersMartin TrochaRobert LechnerMartin S. BrandtMartin StutzmannHartmut Wiggers
    • André EbbersMartin TrochaRobert LechnerMartin S. BrandtMartin StutzmannHartmut Wiggers
    • H01L21/8238
    • H01L21/0257H01L21/02376H01L21/0242H01L21/02422H01L21/02532H01L21/02581H01L21/0259H01L21/02614H01L21/02628H01L29/78Y10S438/96
    • The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10−8 S·cm−1 to 10 S·cm−1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E. the layer obtained after step D is treated thermally to obtain a porous semiconductive structure.
    • 本发明提供一种多孔半导体结构体,其特征在于,该结构的导电率为5×10 -8 S·cm -1〜10 S·cm -1,电导率为0.1〜700meV ,固体成分为30〜60体积%,孔径为1〜500nm,固体部分具有至少部分结晶的掺杂成分,其通过烧结颈部彼此结合,并且具有5nm〜 500nm,并且包括元素硅,锗或这些元素的合金的球形和/或椭圆形形状,以及制造多孔半导体结构的方法,其特征在于获得A.掺杂的半金属颗粒,然后B 从在步骤A后获得的半金属颗粒中获得分散体,然后C.将基材涂布在步骤B之后获得的分散液中,然后D.将步骤C后获得的层用氟化氢溶液 在水中,然后E.在步骤D之后获得的层被热处理以获得多孔半导体结构。