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2. 发明授权

US08202440B1 Methods and apparatus for electron beam assisted etching at low temperatures 有权
标题翻译：低温电子束辅助蚀刻的方法和装置
公开(公告)号：US08202440B1
公开(公告)日：2012-06-19
申请号：US11670928
申请日：2007-02-02
申请人： Mehran Nasser-Ghodsi , Ying Wang , Harrison Chin , Anne Testoni , R. Chris Burns
发明人： Mehran Nasser-Ghodsi , Ying Wang , Harrison Chin , Anne Testoni , R. Chris Burns
IPC分类号： C03C15/00 , C23F1/00
CPC分类号： C23F4/00 , H01L21/32136
摘要： Disclosed are methods and apparatus for etching a sample, such as a semiconductor device or wafer. In general terms, embodiments of the present invention allow dry etching of a material on a sample, such as a copper material, at room temperature using a reactive substance, such as a chorine based gas. For example, the mechanisms of the present invention allow precise etching of a copper material to produce fine feature patterns without heating up the whole device or substrate to an elevated temperature such as 50° C. and above. The etching is assisted by simultaneously scanning a charged particle beam, such as an electron beam, and a photon beam, such as a laser beam, over a same target area of the sample while the reactive substance is introduced near the same target area. The reactive substance, charged particle beam, and photon beam act in combination to etch the sample at the target area. For example, a copper layer may be etched using the mechanisms of the present invention.
摘要翻译：公开了用于蚀刻诸如半导体器件或晶片的样品的方法和装置。一般来说，本发明的实施方案允许使用反应性物质如基于氯化物的气体在室温下在样品（例如铜材料）上干燥蚀刻材料。例如，本发明的机构允许铜材料的精确蚀刻以产生精细的特征图案，而不会将整个装置或基板加热到升高的温度，例如50℃及以上。通过在样品的相同目标区域上同时扫描诸如电子束的带电粒子束和诸如激光束的光子束来辅助蚀刻，同时将反应物质引入到相同目标区域附近。反应物质，带电粒子束和光子束组合起来，以在目标区域刻蚀样品。例如，可以使用本发明的机构蚀刻铜层。

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