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1. 发明申请

US20090294875A1 Metal Oxide Semiconductor Device and Method for Manufacturing the Same 审中-公开
标题翻译：金属氧化物半导体器件及其制造方法
公开(公告)号：US20090294875A1
公开(公告)日：2009-12-03
申请号：US12536005
申请日：2009-08-05
申请人： Haohua Ye , Hok Min Ho , Yu Li
发明人： Haohua Ye , Hok Min Ho , Yu Li
IPC分类号： H01L29/78
CPC分类号： H01L21/26506 , H01L21/26513 , H01L29/665 , H01L29/6659 , H01L29/78621
摘要： A Metal Oxide Semiconductor device includes a semiconductor substrate; a gate electrode formed on the surface of the substrate, having an offset spacer on each side; source/drain electrodes in the substrate having lightly doped regions respectively; metal silicide located on the gate electrode and the source/drain electrodes; and first impurity ions and second impurity ions in the lightly doped regions. A method for manufacturing a Metal Oxide Semiconductor device includes forming a gate electrode on a semiconductor substrate; implanting first impurity ions and second impurity ions to form lightly doped regions; depositing a dielectric layer and etching the dielectric layer to form offset spacers; implanting the first impurity ions to form the source/drain electrodes; forming metal silicide on the surfaces of the gate electrode and the source/drain regions. This invention can effectively prevent metal nickel diffusion into the lightly doped regions.
摘要翻译：金属氧化物半导体器件包括半导体衬底; 形成在所述基板的表面上的栅电极，在每一侧具有偏移间隔物; 分别具有轻掺杂区的衬底中的源/漏电极; 位于栅电极和源/漏电极上的金属硅化物; 以及轻掺杂区域中的第一杂质离子和第二杂质离子。金属氧化物半导体器件的制造方法包括在半导体衬底上形成栅电极; 注入第一杂质离子和第二杂质离子以形成轻掺杂区域; 沉积电介质层并蚀刻介电层以形成偏移间隔物; 注入第一杂质离子以形成源极/漏极; 在栅极电极和源极/漏极区域的表面上形成金属硅化物。本发明可有效地防止金属镍扩散入轻掺杂区域。

2. 发明申请

US20080079095A1 METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：金属氧化物半导体器件及其制造方法
公开(公告)号：US20080079095A1
公开(公告)日：2008-04-03
申请号：US11860492
申请日：2007-09-24
申请人： Haohua YE , Hok Min HO , Yu Ll
发明人： Haohua YE , Hok Min HO , Yu Ll
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/26506 , H01L21/26513 , H01L29/665 , H01L29/6659 , H01L29/78621
摘要： A Metal Oxide Semiconductor device includes a semiconductor substrate; a gate electrode formed on the surface of the substrate, having an offset spacer on each side; source/drain electrodes in the substrate having lightly doped regions respectively; metal silicide located on the gate electrode and the source/drain electrodes; and first impurity ions and second impurity ions in the lightly doped regions. A method for manufacturing a Metal Oxide Semiconductor device includes forming a gate electrode on a semiconductor substrate; implanting first impurity ions and second impurity ions to form lightly doped regions; depositing a dielectric layer and etching the dielectric layer to form offset spacers; implanting the first impurity ions to form the source/drain electrodes; forming metal silicide on the surfaces of the gate electrode and the source/drain regions. This invention can effectively prevent metal nickel diffusion into the lightly doped regions.
摘要翻译：金属氧化物半导体器件包括半导体衬底; 形成在所述基板的表面上的栅电极，在每一侧具有偏移间隔物; 分别具有轻掺杂区的衬底中的源/漏电极; 位于栅电极和源/漏电极上的金属硅化物; 以及轻掺杂区域中的第一杂质离子和第二杂质离子。金属氧化物半导体器件的制造方法包括在半导体衬底上形成栅电极; 注入第一杂质离子和第二杂质离子以形成轻掺杂区域; 沉积电介质层并蚀刻介电层以形成偏移间隔物; 注入第一杂质离子以形成源极/漏极; 在栅极电极和源极/漏极区域的表面上形成金属硅化物。本发明可有效地防止金属镍扩散入轻掺杂区域。

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