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1. 发明授权

US08981524B2 Semiconductor device having a plurality of antifuse memory cells 有权
标题翻译：具有多个反熔丝存储单元的半导体器件
公开(公告)号：US08981524B2
公开(公告)日：2015-03-17
申请号：US12073925
申请日：2008-03-12
申请人： Ryota Tajima , Hajime Tokunaga
发明人： Ryota Tajima , Hajime Tokunaga
IPC分类号： H01L23/52 , H01L29/04 , H01L29/10 , H01L31/036 , H01L27/10 , H01L23/525
CPC分类号： H01L27/11206 , H01L23/5252 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide an antifuse with little power consumption at the time of writing. The antifuse is used for a memory element in a read-only memory device. The antifuse includes a first conductive layer, a multilayer film of two or more layers in which an amorphous silicon film and an insulating film are alternately stacked over the first conductive layer, and a second conductive layer over the multilayer film. Voltage is applied between the first and second conductive layers and resistance of the multilayer film is decreased, whereby data is written to the memory element. When an insulating film having higher resistance than amorphous silicon is formed between the first and second conductive layers, current flowing through the antifuse at the time of writing is reduced.
摘要翻译：目的是提供一种在写入时功耗很小的反熔丝。反熔丝用于只读存储器件中的存储元件。反熔丝包括第一导电层，其中非晶硅膜和绝缘膜交替堆叠在第一导电层上的两层或更多层的多层膜，以及多层膜上的第二导电层。电压施加在第一和第二导电层之间，并且多层膜的电阻降低，从而将数据写入存储元件。当在第一和第二导电层之间形成具有比非晶硅更高的电阻的绝缘膜时，在写入时流过反熔丝的电流减小。

2. 发明授权

US08569170B2 Manufacturing method of semiconductor device comprising silicide layer with varied thickness 有权
标题翻译：包括具有不同厚度的硅化物层的半导体器件的制造方法
公开(公告)号：US08569170B2
公开(公告)日：2013-10-29
申请号：US12636811
申请日：2009-12-14
申请人： Hiromichi Godo , Hajime Tokunaga
发明人： Hiromichi Godo , Hajime Tokunaga
IPC分类号： H01L21/44
CPC分类号： H01L29/458 , H01L21/84 , H01L24/73 , H01L27/1203 , H01L29/665 , H01L29/66636 , H01L29/78618 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01029 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12044 , H01L2924/13091 , H01L2924/14 , H01L2924/15184 , H01L2924/15311 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： It is an object of the present invention to obtain a transistor with a high ON current including a silicide layer without increasing the number of steps. A semiconductor device comprising the transistor includes a first region in which a thickness is increased from an edge on a channel formation region side and a second region in which a thickness is more uniform than that of the first region. The first and second region are separated by a line which is perpendicular to a horizontal line and passes through a point where a line, which passes through the edge of the silicide layer and forms an angle θ (0°
摘要翻译：本发明的目的是获得具有高导通电流的晶体管，该晶体管包括硅化物层而不增加步骤数。包括晶体管的半导体器件包括第一区域，其中厚度从沟道形成区域侧的边缘增加，第二区域的厚度比第一区域的厚度更均匀。第一和第二区域被垂直于水平线的线分开，并穿过穿过硅化物层的边缘并与θ形成角度θ（0°<45°）的线，水平线与硅化物层和杂质区之间的界面相交，第二区的厚度为硅膜的厚度为0.6以上。

3. 发明申请

US20120068271A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120068271A1
公开(公告)日：2012-03-22
申请号：US13290159
申请日：2011-11-07
申请人： Hajime TOKUNAGA
发明人： Hajime TOKUNAGA
IPC分类号： H01L27/092 , H01L29/772 , H01L21/336
CPC分类号： H01L29/458 , H01L27/1214 , H01L27/1266 , H01L29/4908 , H01L29/66757
摘要： After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited with a thickness of 10 nm or more over the semiconductor film while heating the substrate to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, and removing an oxide film on the semiconductor film, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film.
摘要翻译：在衬底上形成半导体膜之后，在半导体膜上沉积Ni膜，同时加热衬底，从而在半导体膜上形成Ni硅化物。或者，在衬底上形成半导体膜之后，在半导体膜上沉积Ni膜，同时将衬底加热到450℃以上，从而在半导体膜上形成Ni硅化物。或者，在衬底上形成半导体膜之后，在半导体膜上沉积厚度为10nm以上的Ni膜，同时将衬底加热到450℃以上，从而在半导体膜上形成Ni硅化物。或者，在基板上形成半导体膜之后，在半导体膜上去除氧化膜，在半导体膜上沉积Ni膜，同时将衬底加热到450℃以上，从而在半导体上形成Ni硅化物电影。

4. 发明申请

US20110186958A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20110186958A1
公开(公告)日：2011-08-04
申请号：US13017740
申请日：2011-01-31
申请人： Naoki OKUNO , Hajime TOKUNAGA
发明人： Naoki OKUNO , Hajime TOKUNAGA
IPC分类号： H01L21/762 , H01L29/02
CPC分类号： H01L21/762 , H01L29/02
摘要： A bond substrate is irradiated with ions, so that an embrittlement layer is formed, then, the bond substrate is bonded to a base substrate. Next, a part of a region of the bonded bond substrate is heated at a temperature higher than a temperature of the other part of the region of the bond substrate, or alternatively, a first heat treatment is performed on the bonded bond substrate as a whole at a first temperature; and a second heat treatment is performed on a part of a region of the bonded bond substrate at a second temperature higher than the first temperature, so that separation of the bond substrate proceeds from the part of the region of the bond substrate to the other part of the region of the bond substrate in the embrittlement layer. Accordingly, a semiconductor layer is formed over the base substrate.
摘要翻译：用离子照射接合衬底，形成脆化层，然后将接合衬底接合到基底。接着，在接合基板的区域的另一部分的温度以上的温度下加热接合接合基板的一部分，或者对接合接合基板整体进行第一次热处理在第一个温度; 并且在高于第一温度的第二温度下对接合的接合基板的区域的一部分进行第二热处理，使得接合基板的分离从接合基板的一部分到另一部分的脆性层中的键合衬底的区域。因此，在基底基板上形成半导体层。

5. 发明申请

US20110089475A1 MEMORY DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US20110089475A1
公开(公告)日：2011-04-21
申请号：US12977836
申请日：2010-12-23
申请人： Hajime TOKUNAGA , Kiyoshi KATO
发明人： Hajime TOKUNAGA , Kiyoshi KATO
IPC分类号： H01L27/108
CPC分类号： H01L27/13
摘要： A memory device capable of data writing at a time other than during manufacturing is provided by using a memory element including an organic material. In a memory cell, a third conductive film, an organic compound, and a fourth conductive film are stacked over a semiconductor film provided with an n-type impurity region and a p-type impurity region, and a pn-junction diode is serially connected to the memory element. A logic circuit for controlling the memory cell includes a thin film transistor. The memory cell and the logic circuit are manufactured over one substrate at the same time. The n-type impurity region and the p-type impurity region of the memory cell are manufactured at the same time as the impurity region of the thin film transistor.
摘要翻译：通过使用包括有机材料的存储元件，能够在除制造之外的时间进行数据写入的存储器件。在存储单元中，在设置有n型杂质区域和p型杂质区域的半导体膜上堆叠第三导电膜，有机化合物和第四导电膜，并且pn结二极管串联连接到存储元件。用于控制存储单元的逻辑电路包括薄膜晶体管。存储单元和逻辑电路同时在一个衬底上制造。与薄膜晶体管的杂质区域同时制造存储单元的n型杂质区域和p型杂质区域。

6. 发明授权

US07858972B2 Memory device and semiconductor device 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US07858972B2
公开(公告)日：2010-12-28
申请号：US11785964
申请日：2007-04-23
申请人： Hajime Tokunaga , Kiyoshi Kato
发明人： Hajime Tokunaga , Kiyoshi Kato
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L27/13
摘要： A memory device capable of data writing at a time other than during manufacturing is provided by using a memory element including an organic material. In a memory cell, a third conductive film, an organic compound, and a fourth conductive film are stacked over a semiconductor film provided with an n-type impurity region and a p-type impurity region, and a pn-junction diode is serially connected to the memory element. A logic circuit for controlling the memory cell includes a thin film transistor. The memory cell and the logic circuit are manufactured over one substrate at the same time. The n-type impurity region and the p-type impurity region of the memory cell are manufactured at the same time as the impurity region of the thin film transistor.
摘要翻译：通过使用包括有机材料的存储元件，能够在除制造之外的时间进行数据写入的存储器件。在存储单元中，在设置有n型杂质区域和p型杂质区域的半导体膜上堆叠第三导电膜，有机化合物和第四导电膜，并且pn结二极管串联连接到存储元件。用于控制存储单元的逻辑电路包括薄膜晶体管。存储单元和逻辑电路同时在一个衬底上制造。与薄膜晶体管的杂质区域同时制造存储单元的n型杂质区域和p型杂质区域。

7. 发明授权

US07782651B2 Semiconductor device including storage device and method for driving the same 有权
标题翻译：半导体装置，包括存储装置及其驱动方法
公开(公告)号：US07782651B2
公开(公告)日：2010-08-24
申请号：US11976202
申请日：2007-10-22
申请人： Hajime Tokunaga , Toshihiko Saito
发明人： Hajime Tokunaga , Toshihiko Saito
IPC分类号： G11C11/00
CPC分类号： H01L27/112 , G11C17/16 , H01L21/84 , H01L27/105 , H01L27/11206 , H01L27/11286 , H01L27/12
摘要： A structure of a storage device which can operate memory elements utilizing silicide reaction using the same voltage value for writing and for reading, and a method for driving the same are proposed. The present invention relates to a storage device including a memory element and a circuit which changes a polarity of applying voltage to the memory element for writing (or reading) into a different polarity of that for reading (or writing). The memory element includes at least a first conductive layer, a film including silicon formed over the first conductive layer, and a second conductive layer formed over the silicon film. The first conductive layer and the second conductive layer of the memory element are formed using different materials.
摘要翻译：提出了可以使用相同的写入和读取电压值来操作使用硅化物反应的存储元件的存储装置的结构及其驱动方法。本发明涉及一种包括存储元件和电路的存储装置，该电路改变向用于写入（或写入）的不同极性的写入（或读取）存储元件的电压施加电压的极性。存储元件至少包括第一导电层，在第一导电层上形成的包括硅的膜，以及形成在硅膜上的第二导电层。存储元件的第一导电层和第二导电层使用不同的材料形成。

8. 发明授权

US07719001B2 Semiconductor device with metal oxides and an organic compound 有权
标题翻译：具有金属氧化物和有机化合物的半导体器件
公开(公告)号：US07719001B2
公开(公告)日：2010-05-18
申请号：US11808498
申请日：2007-06-11
申请人： Ryoji Nomura , Hajime Tokunaga , Kiyoshi Kato
发明人： Ryoji Nomura , Hajime Tokunaga , Kiyoshi Kato
IPC分类号： H01L35/24
CPC分类号： H01L27/1021
摘要： A semiconductor memory device is disclosed in which a layer containing an organic compound is interposed between a pair of electrodes and, further, a first layer including a first metal oxide and a second layer including a second metal oxide are interposed between the pair of electrodes. One of the two layers including the metal oxide acts as a p-type semiconductor layer and the other acts as an n-type semiconductor layer. The first layer including the first metal oxide and the second layer including the second metal oxide form a p-n junction, which provides rectification characteristic to the semiconductor memory device.
摘要翻译：公开了一种半导体存储器件，其中包含有机化合物的层被插入在一对电极之间，此外，包括第一金属氧化物的第一层和包括第二金属氧化物的第二层插入在该对电极之间。包含金属氧化物的两层之一用作p型半导体层，另一层用作n型半导体层。包括第一金属氧化物的第一层和包括第二金属氧化物的第二层形成p-n结，其向半导体存储器件提供整流特性。

9. 发明申请

US20090286376A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090286376A1
公开(公告)日：2009-11-19
申请号：US12505095
申请日：2009-07-17
申请人： Hajime TOKUNAGA
发明人： Hajime TOKUNAGA
IPC分类号： H01L21/322
CPC分类号： H01L29/458 , H01L27/1214 , H01L27/1266 , H01L29/4908 , H01L29/66757
摘要： Ni silicide is formed through simple steps. After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni suicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited with a thickness of 10 nm or more over the semiconductor film while heating the substrate to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, and removing an oxide film on the semiconductor film, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, and removing an oxide film on the semiconductor film, a Ni film is deposited with a thickness of 10 nm or more over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film.
摘要翻译： Ni硅化物通过简单的步骤形成。在衬底上形成半导体膜之后，在半导体膜上沉积Ni膜，同时加热衬底，从而在半导体膜上形成Ni硅化物。或者，在衬底上形成半导体膜之后，在半导体膜上沉积Ni膜，同时将衬底加热到450℃以上，从而在半导体膜上形成Ni硅化物。或者，在衬底上形成半导体膜之后，在半导体膜上沉积厚度为10nm以上的Ni膜，同时将衬底加热到450℃以上，从而在半导体膜上形成Ni硅化物。或者，在基板上形成半导体膜之后，在半导体膜上去除氧化膜，在半导体膜上沉积Ni膜，同时将衬底加热到450℃以上，从而在半导体上形成Ni硅化物电影。或者，在衬底上形成半导体膜之后，除去半导体膜上的氧化膜，在半导体膜上沉积厚度为10nm以上的Ni膜，同时将衬底加热至450℃以上从而在半导体膜上形成Ni硅化物。

10. 发明授权

US07575959B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07575959B2
公开(公告)日：2009-08-18
申请号：US11283775
申请日：2005-11-22
申请人： Hajime Tokunaga
发明人： Hajime Tokunaga
IPC分类号： H01L21/00 , H01L29/04
CPC分类号： H01L29/458 , H01L27/1214 , H01L27/1266 , H01L29/4908 , H01L29/66757
摘要： Ni silicide is formed through simple steps. After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited with a thickness of 10 nm or more over the semiconductor film while heating the substrate to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, and removing an oxide film on the semiconductor film, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, and removing an oxide film on the semiconductor film, a Ni film is deposited with a thickness of 10 nm or more over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film.
摘要翻译： Ni硅化物通过简单的步骤形成。在衬底上形成半导体膜之后，在半导体膜上沉积Ni膜，同时加热衬底，从而在半导体膜上形成Ni硅化物。或者，在衬底上形成半导体膜之后，在半导体膜上沉积Ni膜，同时将衬底加热到450℃以上，从而在半导体膜上形成Ni硅化物。或者，在衬底上形成半导体膜之后，在半导体膜上沉积厚度为10nm以上的Ni膜，同时将衬底加热到450℃以上，从而在半导体膜上形成Ni硅化物。或者，在基板上形成半导体膜之后，在半导体膜上去除氧化膜，在半导体膜上沉积Ni膜，同时将衬底加热到450℃以上，从而在半导体上形成Ni硅化物电影。或者，在衬底上形成半导体膜之后，除去半导体膜上的氧化膜，在半导体膜上沉积厚度为10nm以上的Ni膜，同时将衬底加热至450℃以上从而在半导体膜上形成Ni硅化物。

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