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    • 1. 发明专利
    • Reference voltage generation circuit
    • 参考电压发生电路
    • JP2011008438A
    • 2011-01-13
    • JP2009150240
    • 2009-06-24
    • Hajime Ando一 安東
    • ANDO HAJIME
    • G05F3/24H03F3/347
    • PROBLEM TO BE SOLVED: To perform low power supply voltage operation ≤1 V and low current operation not more than dozens of nA, and to obtain a reference voltage not depending on a temperature with a small circuit scale.SOLUTION: The reference voltage generation circuit includes: a first current mirror circuit formed by two P-type FETs M1, M2 having different threshold voltages; and a second current mirror circuit formed by two N-type FETs M3, M4 having different threshold voltages. In the first current mirror circuit, a gate and a drain of M1 having a larger absolute value of the threshold voltage are short-circuited to perform diode connection, wherein M1 is operated in a sub threshold area, and dimension W/L of M1 is selected to about ten times the M2 such that M2 having a smaller absolute value of the threshold voltage is operated in a saturated operation area. In the second current mirror circuit, the N-type FET having the larger threshold voltage is operated in a sub threshold area, and dimension W/L of M3 is selected to about ten times the M4 such that M4 having the low threshold voltage is operated in a saturated operation area. In the reference voltage generation circuit, output ends of two current mirrors are connected to form a closed circuit, and a gate voltage generated in M4 is used as the reference voltage.
    • 要解决的问题:执行低电源电压操作≤1V,低电流运行不超过几十个nA,并获得不依赖于具有小电路规模的温度的参考电压。解决方案:参考电压产生电路 包括:由具有不同阈值电压的两个P型FET M1,M2形成的第一电流镜电路; 以及由具有不同阈值电压的两个N型FET M3,M4形成的第二电流镜电路。 在第一电流镜电路中,具有阈值电压绝对值较大的M1的栅极和漏极短路以进行二极管连接,其中M1在子阈值区域中工作,M1的尺寸W / L为 选择为大约10倍的M2,使得具有较小阈值电压绝对值的M2在饱和操作区域中操作。 在第二电流镜电路中,具有较大阈值电压的N型FET在副阈值区域中工作,M3的尺寸W / L选择为M4的约十倍,使得具有低阈值电压的M4被操作 在饱和操作区域。 在参考电压产生电路中,连接两个电流镜的输出端形成闭合电路,并且使用M4中产生的栅极电压作为参考电压。