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1. 发明授权

US07848485B2 Trailer security inspection system 有权
标题翻译：拖车安全检查系统
公开(公告)号：US07848485B2
公开(公告)日：2010-12-07
申请号：US12274932
申请日：2008-11-20
申请人： Haifeng Hu , Zhiqiang Chen , Yuanjing Li , Chuanxiang Tang , Hua Peng , Zhizhong Liang , Zhongrong Yang , Shangmin Sun , Yaohong Liu , Jinyu Zhang , Qingjun Zhang , Haitao Jiang , Yanli Deng , Xiang'an Qi , Meng Wang , Haihong Sun
发明人： Haifeng Hu , Zhiqiang Chen , Yuanjing Li , Chuanxiang Tang , Hua Peng , Zhizhong Liang , Zhongrong Yang , Shangmin Sun , Yaohong Liu , Jinyu Zhang , Qingjun Zhang , Haitao Jiang , Yanli Deng , Xiang'an Qi , Meng Wang , Haihong Sun
IPC分类号： G01N23/04 , H05G1/02 , G01T7/08
CPC分类号： G01V5/0008
摘要： For a radiation imaging inspection system, apparatus, and/or method, the system, particularly a trailer security inspection system, includes a protective wall forming an inspection passage for passage of a trailer, a radiation imaging system effecting security inspection of the trailer passing through the inspection passage, and a fraction arrangement for hauling the trailer.
摘要翻译：对于放射线成像检查系统，装置和/或方法，系统，特别是拖车安全检查系统包括形成用于拖车通过的检查通道的保护壁，影响拖车通过的安全检查的辐射成像系统检查通道和用于牵引拖车的牵引装置。

2. 发明申请

US20100214489A1 AUTO-BROADCASTING TV UNIT AND METHOD 审中-公开
标题翻译：自动广播电视机和方法
公开(公告)号：US20100214489A1
公开(公告)日：2010-08-26
申请号：US12706302
申请日：2010-02-16
申请人： Haitao Jiang
发明人： Haitao Jiang
IPC分类号： H04N5/38
CPC分类号： H04N5/64 , H04N5/63 , H04N21/4126 , H04N21/414 , H04N21/42204
摘要： The present invention relates to the TV field. An auto-broadcasting TV unit and an auto-broadcasting method are provided in the present invention to solve the problem of complicated operations for broadcast of a TV terminal with the existing technology. The device includes an antenna, a TV signal processing module, a sensor, and a judging module. The TV signal processing module is configured to process signals received by the antenna and display signals to a user. The sensor is configured to detect the use status of the antenna and send the status information of the antenna to the judging module. The judging module is configured to turn on or turn off the TV signal processing module according to the status information. The benefit of the present invention is to simplify the operation for a user.
摘要翻译：本发明涉及电视领域。本发明提供了一种自动广播电视机和自动广播方法，以解决现有技术中广播电视终端的复杂操作问题。该装置包括天线，电视信号处理模块，传感器和判断模块。 TV信号处理模块被配置为处理由天线接收的信号并向用户显示信号。传感器被配置为检测天线的使用状态并将天线的状态信息发送到判断模块。判断模块被配置为根据状态信息来打开或关闭TV信号处理模块。本发明的优点是简化用户的操作。

3. 发明授权

US08275114B2 Method and system for implementing ring back tones and ring back images in the VP service 有权
标题翻译：在VP服务中实现回铃音和回铃图像的方法和系统
公开(公告)号：US08275114B2
公开(公告)日：2012-09-25
申请号：US11886089
申请日：2006-03-13
申请人： Haitao Jiang
发明人： Haitao Jiang
IPC分类号： H04M3/00
CPC分类号： H04N7/147 , H04M3/42017
摘要： A method and a system for implementing ring back tones and ring back images in the VP service provides quality-assured and customized ring back tones and ring back images. A control module plays the ring back tones and ring back images for calling UEs through a voice and image channel defined in the VP series of protocols by resolving or pre-negotiating the voice and image coding formats supported by the calling UEs.
摘要翻译：用于在VP服务中实现回铃音和回铃图像的方法和系统提供质量保证和定制的回铃音和回铃图像。控制模块通过解决或预先协商主叫用户端支持的语音和图像编码格式，通过协议VP系列中定义的语音和图像信道播放呼叫UE的回铃音和回铃图像。

4. 发明申请

US20090136004A1 TRAILER SECURITY INSPECTION SYSTEM 有权
标题翻译：拖车安全检查系统
公开(公告)号：US20090136004A1
公开(公告)日：2009-05-28
申请号：US12274932
申请日：2008-11-20
申请人： Haifeng HU , Zhiqiang CHEN , Yuanjing LI , Chuanxiang TANG , Hua PENG , Zhizhong LIANG , Zhongrong YANG , Shangmin SUN , Yaohong LIU , Jinyu ZHANG , Qingjun ZHANG , Haitao JIANG , Yanli DENG , Xiang'an QI , Meng WANG , Haihong SUN
发明人： Haifeng HU , Zhiqiang CHEN , Yuanjing LI , Chuanxiang TANG , Hua PENG , Zhizhong LIANG , Zhongrong YANG , Shangmin SUN , Yaohong LIU , Jinyu ZHANG , Qingjun ZHANG , Haitao JIANG , Yanli DENG , Xiang'an QI , Meng WANG , Haihong SUN
IPC分类号： H05G1/02 , G01N23/04
CPC分类号： G01V5/0008
摘要： For a radiation imaging inspection system, apparatus, and/or method, the system, particularly a trailer security inspection system, may include a protective wall forming an inspection passage for passage of a trailer, a radiation imaging system effecting security inspection of the trailer passing through the inspection passage, and a traction arrangement for hauling the trailer.
摘要翻译：对于放射线成像检查系统，装置和/或方法，系统，特别是拖车安全检查系统可以包括形成用于通过拖车的检查通道的保护壁，影响拖车通过的安全检查的辐射成像系统通过检查通道，以及用于牵引拖车的牵引装置。

5. 发明申请

US20110286370A1 UTILIZATION METHOD AND APPARATUS FOR GUARD BAND 审中-公开
标题翻译：防护带的使用方法和装置
公开(公告)号：US20110286370A1
公开(公告)日：2011-11-24
申请号：US13143690
申请日：2010-01-08
申请人： Hai Tang , Nan Li , Haitao Jiang
发明人： Hai Tang , Nan Li , Haitao Jiang
IPC分类号： H04J3/02
CPC分类号： H04W72/0446 , H04W72/0406
摘要： A utilization method and apparatus for guard band, used under the premise that side-channel interference is suppressed when a time division duplex (TDD) system and a frequency division duplex (FDD) system coexist, utilizes guard band effectively and increases utilization rate of mobile communication spectrum resources. The utilization method for guard band comprises: a first base station in a TDD system allocates a first frequency resource within an uplink guard band to a first user equipment and issues resource scheduling information (S1001); the first base station receives the uplink data carried in uplink time units on the first frequency resource, which is sent by the first user equipment according to the resource scheduling information (S 1002); the first base station carries the downlink data in downlink time units and sends the downlink data to the first user equipment on a second frequency resource, the second frequency resource comprises frequency resource in a downlink guard band and/or frequency resource in a TDD band (S1003).
摘要翻译：在时分双工（TDD）系统和频分双工（FDD）系统共存的前提下，在抑制侧信道干扰的前提下，利用保护频带的利用方法和装置，有效利用保护频带，提高移动台的利用率通信频谱资源。保护频带的利用方法包括：TDD系统中的第一基站向第一用户设备分配上行卫星频带内的第一频率资源，发布资源调度信息（S1001）。第一基站接收由第一用户设备根据资源调度信息发送的第一频率资源上行时间单位携带的上行链路数据（S1002）。第一基站以下行链路时间单位携带下行链路数据，并在第二频率资源上向第一用户设备发送下行链路数据，第二频率资源包括TDD频带中的下行链路保护频带和/或频率资源中的频率资源（ S1003）。

6. 发明申请

US20090273020A1 SONOS Flash Memory 有权
标题翻译： SONOS闪存
公开(公告)号：US20090273020A1
公开(公告)日：2009-11-05
申请号：US12502778
申请日：2009-07-14
申请人： Haitao Jiang , Xinsheng Zhong , Jiangpeng Xue , Gangning Wang
发明人： Haitao Jiang , Xinsheng Zhong , Jiangpeng Xue , Gangning Wang
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, comprising: preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easy to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer. Thereby, the short circuit between different memory cells may be avoided.
摘要翻译：一种用于制造氧化硅 - 氮化物 - 氧化物 - 硅（SONOS）闪速存储器的方法，包括：制备包括氧化硅 - 氮化硅 - 氧化硅（ONO）层，第一多晶硅层和第一蚀刻停止层层序; 沿着位线的方向蚀刻第一蚀刻停止层; 用第一蚀刻停止层作为掩模选择性蚀刻第一多晶硅层，直到暴露氧化硅 - 氮化硅 - 氧化硅（ONO）层，蚀刻的第一多晶硅层沿着字线的方向具有逆梯形截面; 在第一多晶硅层的部分之间填充介电层，电介质层沿着字线的方向具有梯形截面。在上述步骤之后，通过垂直蚀刻容易地去除电介质层的侧壁上的第一多晶硅层的部分。因此，在介电层的侧壁上不会形成多晶硅残渣。由此，可以避免不同存储单元之间的短路。

7. 发明申请

US20080129815A1 Method And System For Realizing Ring Back Tone And Ring Back Tone And Ring Back Image In Video Phone Service 有权
标题翻译：在视频电话服务中实现回铃音和回铃音和回铃音的方法和系统
公开(公告)号：US20080129815A1
公开(公告)日：2008-06-05
申请号：US11886089
申请日：2006-03-13
申请人： Haitao Jiang
发明人： Haitao Jiang
IPC分类号： H04N7/14 , H04B7/216
CPC分类号： H04N7/147 , H04M3/42017
摘要： A method for realizing ring back tone and ring back image in video phone service, wherein when the calling subscriber initiates the VP service call, the control module adopts the calling subscriber supported phonetic and image encoding form which are resolved or preliminary arranged, and plays the ring back tone and ring back image to the calling subscriber through the phonetic and image channel in VP telephone series protocol. The invention enables that the VP service in 3G system can provide high quality and uniformly customized ring back tone, and at the same time, it can provide ring back image.
摘要翻译：一种在视频电话业务中实现回铃音和回铃图像的方法，其中当主叫用户启动VP业务呼叫时，控制模块采用主叫用户支持的语音和图像编码形式进行解决或初步排列，并播放通过VP电话系列协议中的语音和图像通道将回铃音和回铃图像发送给主叫用户。本发明使得3G系统中的VP服务能够提供高品质和均匀定制的回铃音，同时可以提供回铃图像。

8. 发明授权

US07977734B2 SONOS flash memory 有权
标题翻译： SONOS闪存
公开(公告)号：US07977734B2
公开(公告)日：2011-07-12
申请号：US12502778
申请日：2009-07-14
申请人： Haitao Jiang , Xinsheng Zhong , Jiangpeng Xue , Gangning Wang
发明人： Haitao Jiang , Xinsheng Zhong , Jiangpeng Xue , Gangning Wang
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, comprising: preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easy to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer. Thereby, the short circuit between different memory cells may be avoided.
摘要翻译：一种用于制造氧化硅 - 氮化物 - 氧化物 - 硅（SONOS）闪速存储器的方法，包括：制备包括氧化硅 - 氮化硅 - 氧化硅（ONO）层，第一多晶硅层和第一蚀刻停止层层序; 沿着位线的方向蚀刻第一蚀刻停止层; 用第一蚀刻停止层作为掩模选择性蚀刻第一多晶硅层，直到暴露氧化硅 - 氮化硅 - 氧化硅（ONO）层，蚀刻的第一多晶硅层沿着字线的方向具有逆梯形截面; 在第一多晶硅层的部分之间填充介电层，电介质层沿着字线的方向具有梯形截面。在上述步骤之后，通过垂直蚀刻容易地去除电介质层的侧壁上的第一多晶硅层的部分。因此，在介电层的侧壁上不会形成多晶硅残渣。由此，可以避免不同存储单元之间的短路。

9. 发明授权

US07648882B2 SONOS flash memory and method for fabricating the same 有权
标题翻译： SONOS闪存及其制造方法
公开(公告)号：US07648882B2
公开(公告)日：2010-01-19
申请号：US11840984
申请日：2007-08-19
申请人： Haitao Jiang , Xinsheng Zhong , Jiangpeng Xue , Gangning Wang
发明人： Haitao Jiang , Xinsheng Zhong , Jiangpeng Xue , Gangning Wang
IPC分类号： H01L21/8239
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory includes preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; and filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easier to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer, and the short circuit between different memory cells may be avoided.
摘要翻译：一种用于制造氧化硅 - 氮化物 - 氧化物 - 硅（SONOS）闪速存储器的方法包括：制备包括氧化硅 - 氮化硅 - 氧化硅（ONO）层，第一多晶硅层和第一蚀刻停止层的硅衬底序列; 沿着位线的方向蚀刻第一蚀刻停止层; 用第一蚀刻停止层作为掩模选择性蚀刻第一多晶硅层，直到暴露氧化硅 - 氮化硅 - 氧化硅（ONO）层，蚀刻的第一多晶硅层沿着字线的方向具有逆梯形截面; 以及在所述第一多晶硅层的部分之间填充介电层，所述电介质层沿着字线的方向具有梯形截面。在上述步骤之后，通过垂直蚀刻更容易去除电介质层的侧壁上的第一多晶硅层的部分。因此，在介电层的侧壁上不会形成多晶硅残渣，可以避免不同的存储单元之间的短路。

10. 发明申请

US20080135919A1 SONOS FLASH MEMORY AND METHOD FOR FABRICATIONG THE SAME 有权
标题翻译： SONOS闪速存储器及其制造方法
公开(公告)号：US20080135919A1
公开(公告)日：2008-06-12
申请号：US11840984
申请日：2007-08-19
申请人： Haitao JIANG , Xinsheng Zhong , Jiangpeng Xue , Gangning Wang
发明人： Haitao JIANG , Xinsheng Zhong , Jiangpeng Xue , Gangning Wang
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, comprising: preparing a silicon substrate including a silicon oxide-silicon nitride-silicon oxide (ONO) layer, a first polysilicon layer and a first etch stop layer in sequence; etching the first etch stop layer along a direction of bit line; selectively etching the first polysilicon layer with the first etch stop layer as a mask, till the silicon oxide-silicon nitride-silicon oxide (ONO) layer is exposed, the etched first polysilicon layer having an inverse trapezia section along a direction of word line; filling a dielectic layer between portions of the first polysilicon layer, the dielectric layer having a trapezia section along the direction of word line. After the above steps, it becomes easy to remove the portion of the first polysilicon layer on a sidewall of the dielectric layer by vertical etching. Thus, no polysilicon residue will be formed on the sidewall of the dielectric layer. Thereby, the short circuit between different memory cells may be avoided.
摘要翻译：一种用于制造氧化硅 - 氮化物 - 氧化物 - 硅（SONOS）闪速存储器的方法，包括：制备包括氧化硅 - 氮化硅 - 氧化硅（ONO）层，第一多晶硅层和第一蚀刻停止层层序; 沿着位线的方向蚀刻第一蚀刻停止层; 用第一蚀刻停止层作为掩模选择性蚀刻第一多晶硅层，直到暴露氧化硅 - 氮化硅 - 氧化硅（ONO）层，蚀刻的第一多晶硅层沿着字线的方向具有逆梯形截面; 在第一多晶硅层的部分之间填充介电层，电介质层沿着字线的方向具有梯形截面。在上述步骤之后，通过垂直蚀刻容易地去除电介质层的侧壁上的第一多晶硅层的部分。因此，在介电层的侧壁上不会形成多晶硅残渣。由此，可以避免不同存储单元之间的短路。

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