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    • 1. 实用新型
    • 神龕之光源裝置
    • 神龛之光源设备
    • TWM264980U
    • 2005-05-21
    • TW093217366
    • 2004-10-29
    • 黃和金 HUANG, HE JIN
    • 黃和金 HUANG, HE JIN
    • A47G
    • 本創作係提供一種神龕之光源裝置,特別是經由結構之改良設計,使其燈體及控制盒在組裝上得以視神龕規格作適當調整,據以獲得靈活而良好之組配效果者;其結構設計上,主要是於神龕各層隔板前緣採適當間隔設有數長形孔槽,該等孔槽之寬度恰與燈體之基部相符,使燈體得以通過孔槽而顯露於下層神龕上緣,而其控制盒則被止檔於隔板頂面,並藉孔槽之長條型態而賦予燈體其控制盒得以橫向移位調整位置,以因應其組裝之神龕規格,使燈體得以保持在神龕頂部中央位置對內置神像形成照射,再利用預製的接線將各燈體的控制盒予以串接並聯,進而完成神龕整體光源裝置之組配,據以特能解決習知神龕光源裝置受限於其接線規格固定所衍生之諸多問題與缺失者。
    • 本创作系提供一种神龛之光源设备,特别是经由结构之改良设计,使其灯体及控制盒在组装上得以视神龛规格作适当调整,据以获得灵活而良好之组配效果者;其结构设计上,主要是于神龛各层隔板前缘采适当间隔设有数长形孔槽,该等孔槽之宽度恰与灯体之基部相符,使灯体得以通过孔槽而显露于下层神龛上缘,而其控制盒则被止档于隔板顶面,并藉孔槽之长条型态而赋予灯体其控制盒得以横向移位调整位置,以因应其组装之神龛规格,使灯体得以保持在神龛顶部中央位置对内置神像形成照射,再利用预制的接线将各灯体的控制盒予以串接并联,进而完成神龛整体光源设备之组配,据以特能解决习知神龛光源设备受限于其接线规格固定所衍生之诸多问题与缺失者。
    • 5. 发明申请
    • FLASH MEMORY DATA READ/WRITE PROCESSING METHOD
    • 闪存数据读/写处理方法
    • WO2008145070A1
    • 2008-12-04
    • PCT/CN2008/071142
    • 2008-05-30
    • MEMORIGHT MEMORITECH (SHENZHEN) CO., LTDHUANG, He
    • HUANG, He
    • G11C16/10G06F13/00
    • G11C16/349
    • A flash memory data read/write processing method is provided. The method includes the following steps. In Step 1, during storing the flash memory data, an encoding process is performed on the data to be stored so that the number of specific values in the processed data is reduced compared with that before the encoding, and the encoded data is written into a flash memory cell. In Step 2, during reading the flash memory data, first, the encoded data in the flash memory cell is read out, then a decoding process corresponding to the encoding process described in Step 1 is performed on the read data, and finally, the decoded original data is output. This method may reduce the consumption of a flash memory chip due to writing and erasing operations, thereby prolonging the operating life span of the flash memory chip. This method may also increase the efficiency of writing and erasing operations, reduce the operating time, as well as reduce the power consumption of flash memory operations.
    • 提供闪存数据读/写处理方法。 该方法包括以下步骤。 在步骤1中,在存储闪速存储器数据期间,对要存储的数据执行编码处理,使得与编码之前相比,处理数据中的特定值的数量减少,编码数据被写入 闪存单元 在步骤2中,在读取闪速存储器数据期间,首先读出闪存单元中的编码数据,然后对读取的数据执行与步骤1中描述的编码处理相对应的解码处理,最后,解码 输出原始数据。 该方法可以减少由于写入和擦除操作而导致的闪存芯片的消耗,从而延长闪存芯片的工作寿命。 该方法还可以提高写入和擦除操作的效率,减少操作时间,以及降低闪存操作的功耗。
    • 6. 发明申请
    • METHOD AND STRUCTURE FOR DESULFURIZING GASOLINE OR DIESEL FUEL FOR USE IN A FUEL CELL POWER PLANT
    • 用于在燃料电池电厂中使用汽油或柴油燃料的方法和结构
    • WO2005018019A2
    • 2005-02-24
    • PCT/US2004/025305
    • 2004-07-29
    • UTC FUEL CELLS, LLCHUANG, HeDARDAS, ZissisLESIEUR, Roger, S.
    • HUANG, HeDARDAS, ZissisLESIEUR, Roger, S.
    • H01M
    • B01J20/28045B01J19/2485B01J19/249B01J19/2495B01J20/02B01J20/06B01J20/08B01J20/103B01J20/28014B01J20/28016B01J20/28042B01J20/28057B01J20/28059B01J20/28097B01J20/3042B01J20/3204B01J20/3236B01J20/3289B01J20/3293B01J23/755B01J35/04B01J37/0215B01J2208/00132B01J2208/0015B01J2219/00081B01J2219/00085B01J2219/2453B01J2219/2458B01J2219/2459B01J2219/2479B01J2219/2485B01J2220/42C10G25/003C10G29/04H01M8/0675
    • A sulfur scrubbing method and structure is operable to remove substantially all of the sulfur present in an undiluted oxygenated hydrocarbon fuel stock supply which can be used to power an internal combustion engine or a fuel cell power plant in a mobile environment, such as an automobile, bus, truck, boat, or the like, or in a stationary environment. The fuel stock can be gasoline, diesel fuel, or other like fuels which contain relatively high levels of organic sulfur compounds such as mercaptans, sulfides, disulfides, thiophenes, and the like. The undiluted hydrocarbon fuel supply is passed through a desulfurizer bed (2) which is provided with a high surface aréa nickel reactant, and wherein essentially all of the nickel reactant in the scrubber bed reacts with sulfur in the fuel stream, so as to remove sulfur from the fuel stream by converting it to nickel sulfide on the scrubber bed. The desulfurized organic remnants of the fuel stream continue through the remainder of the fuel processing system in the fuel cell power plant, or through the internal combustion engine. The desulfurizer bed is preferably formed from a high surface area ceramic foam monolith (22), the pores (26) of which are coated with the high surface area nickel reactant. The use of the foam monolith combined with the high surface area of the reactant, enables essentially 100% of the nickel reactant to come into contact with the fuel stream being desulfurized. The scrubber bed can also be formed from high surface area nickel coated alumina pellets, from a high surface area nickel coated ceramic extrusion, from high surface area nickel pellets, and from high surface area nickel extrudates.
    • 硫洗涤方法和结构可操作以基本上除去未稀释的含氧烃燃料原料供应中存在的硫,其可用于为诸如汽车的移动环境中的内燃机或燃料电池发电厂供电, 公共汽车,卡车,船等,或在静止的环境中。 燃料原料可以是含有比较高含量的有机硫化合物如硫醇,硫化物,二硫化物,噻吩等的汽油,柴油燃料或其他类似的燃料。 未稀释的碳氢化合物燃料供应通过脱硫器床(2),其中提供有高表面镍的镍反应物,并且其中洗涤塔中的基本上所有的镍反应物与燃料流中的硫反应,以便除去硫 从燃料流将其转化为洗涤床上的硫化镍。 燃料流的脱硫有机残余物继续通过燃料电池发电厂的燃料处理系统的其余部分,或通过内燃机。 脱硫剂床优选由高表面积的陶瓷泡沫整料(22)形成,其中孔(26)涂覆有高表面积的镍反应物。 使用与反应物的高表面积结合的泡沫整体使基本上100%的镍反应物与正在脱硫的燃料流接触。 洗涤床还可以由高表面积镍涂层氧化铝颗粒,高表面积镍涂层陶瓷挤出物,高表面积镍颗粒和高表面积镍挤出物形成。
    • 10. 发明申请
    • PARALLEL FLASH MEMORY CONTROLLER, CHIP AND CONTROL METHOD THEREOF
    • 并行闪存控制器,芯片及其控制方法
    • WO2008138249A1
    • 2008-11-20
    • PCT/CN2008/070884
    • 2008-05-05
    • MEMORIGHT MEMORITECH (SHENZHEN) CO., LTDHUANG, He
    • HUANG, He
    • G06F13/38
    • G06F13/4239
    • A parallel flash memory controller, a chip, and a control method thereof are disclosed. First, an on-chip control bus sends flash memory control instructions in parallel to instruction parsing units (211) according to channels. Next, the instruction parsing units store (211) and parse the flash memory instructions corresponding to the flash memory channels, and sequentially send the flash memory control instruction to the flash memory control units (213). Then, the flash memory control units (213) send control instructions to the flash chips in the channels according to rows, and then the control instructions are processed in parallel in flash memory rows. In the present invention, the operations for each channel are performed independently in parallel, the flash memory control units (213) in the channels send the control instructions in series, and meanwhile, in each flash memory row, operations are concurrently performed in parallel. Therefore, the read/write rate of the flash memory is increased for many times, and the bottleneck in adopting flash memory chips to accomplish high-speed and large-capacity storage devices is effectively eliminated.
    • 公开了并行闪存控制器,芯片及其控制方法。 首先,片上控制总线根据信道将指令解析单元(211)并行发送闪存控制指令。 接下来,指令解析单元存储(211)并解析对应于闪存通道的闪存指令,并且将闪存控制指令顺序地发送到闪速存储器控制单元(213)。 然后,闪速存储器控制单元(213)根据行将控制指令发送到通道中的闪存芯片,然后控制指令在闪存存储器行中并行处理。 在本发明中,并行地进行各信道的动作,通道中的闪速存储器控制部(213)串联发送控制指令,同时在每个闪速存储器行中并行并行执行操作。 因此,闪速存储器的读/写速率增加了许多次,并且有效地消除了采用闪存芯片来实现高速和大容量存储设备的瓶颈。