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    • 9. 发明申请
    • INTERCONNECT STRUCTURE USING THROUGH WAFER VIAS AND METHOD OF FABRICATION
    • 采用晶圆VIAS的互连结构及制造方法
    • WO2008042304A2
    • 2008-04-10
    • PCT/US2007021014
    • 2007-10-01
    • INNOVATIVE MICRO TECHNOLOGYFOSTER JOHN SHOVEY STEVEN HRUBEL PAUL JRYBNICEK KIMON
    • FOSTER JOHN SHOVEY STEVEN HRUBEL PAUL JRYBNICEK KIMON
    • H01L29/06H01L21/30
    • B81B7/007B81B2201/014B81B2207/092
    • A device and a method are described which hermetically seals at least one microstructure within a cavity. Electrical access to the at least one microstructure is provided by through wafer vias formed through a via substrate which supports the at least one microstructure on its front side. The via substrate and a lid wafer may form a hermetic cavity which encloses the at least one microstructure. The through wafer vias are connected to bond pads located outside the cavity by an interconnect structure formed on the back side of the via substrate. Because they are outside the cavity, the bond pads may be placed inside the perimeter of the bond line forming the cavity, thereby greatly reducing the area occupied by the device. The through wafer vias also shorten the circuit length between the microstructure and the interconnect, thus improving heat transfer and signal loss in the device.
    • 描述了一种装置和方法,其密封腔体内的至少一个微结构。 至少一个微结构的电通路由穿过通孔衬底形成的穿透晶片通孔提供,该通孔衬底在其前侧支撑至少一个微结构。 通孔基板和盖晶片可以形成封闭至少一个微结构的气密空腔。 贯通晶片通孔通过形成在通孔衬底的背侧上的互连结构连接到位于空腔外部的接合焊盘。 因为它们在空腔外部,所以可以将键合焊盘放置在形成空腔的键合线的周边内,由此大大减小了器件占用的面积。 晶圆通孔还缩短了微结构和互连之间的电路长度,从而改善了器件中的传热和信号损耗。