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    • 1. 发明授权
    • Plasma assisted apparatus for organic film deposition
    • 用于有机膜沉积的等离子体辅助设备
    • US08235002B2
    • 2012-08-07
    • US12046042
    • 2008-03-11
    • Guo-Shing HuangTung-Ying LinChun-Hao ChangHerrison WangTeng-Yen Wabg
    • Guo-Shing HuangTung-Ying LinChun-Hao ChangHerrison WangTeng-Yen Wabg
    • C23C16/00
    • H01L51/0008B05D1/62H01L51/5253H01L51/56
    • A plasma assisted apparatus for organic film deposition, comprising: a plasma chamber, capable of thermally cracking a precursor in the plasma chamber; and a deposition chamber, being channeled with the plasma chamber for receiving the thermally cracked precursor. In an exemplary embodiment, the deposition chamber further comprises a substrate device, being provided for the thermally cracked precursor to deposit thereon to form an organic film. As the plasma chamber is separated from the deposition chamber in the aforesaid apparatus, a low-temperature film deposition process can be used for forming organic films while preventing the substrate device from being bombarded directly by plasma. In addition, as there is a flow guiding device arranged at the outlet of the plasma chamber, the thermally cracked precursor is guided or disturbed and thus is prevented from overly concentrating at the outlet or the center of the substrate device. Thereby, surface roughness as well as uniformity of the organic film can be effectively improved.
    • 一种用于有机膜沉积的等离子体辅助装置,包括:等离子体室,其能够热裂解等离子体室中的前体; 以及沉积室,其与等离子体室一起引导以接收热裂化的前体。 在示例性实施例中,沉积室还包括衬底装置,其被设置用于使热裂化的前体沉积在其上以形成有机膜。 由于在上述装置中等离子体室与沉积室分离,所以可以使用低温膜沉积工艺来形成有机膜,同时防止基板装置被等离子体直接轰击。 此外,由于在等离子体室的出口处设置有引流装置,所以热裂化的前体被引导或干扰,从而防止过度集中在基板装置的出口或中心。 由此,可以有效地提高表面粗糙度以及有机膜的均匀性。
    • 6. 发明申请
    • PLASMA ASSISTED APPARATUS FOR ORGANIC FILM DEPOSITION
    • 等离子体辅助设备有机膜沉积
    • US20090133622A1
    • 2009-05-28
    • US12046042
    • 2008-03-11
    • GUO-SHING HUANGTUNG-YING LINCHUN-HAO CHANGHERRISON WANGTENG-YEN WANG
    • GUO-SHING HUANGTUNG-YING LINCHUN-HAO CHANGHERRISON WANGTENG-YEN WANG
    • B05C11/00C23C16/453
    • H01L51/0008B05D1/62H01L51/5253H01L51/56
    • A plasma assisted apparatus for organic film deposition, comprising: a plasma chamber, capable of thermally cracking a precursor in the plasma chamber; and a deposition chamber, being channeled with the plasma chamber for receiving the thermally cracked precursor. In an exemplary embodiment, the deposition chamber further comprises a substrate device, being provided for the thermally cracked precursor to deposit thereon to form an organic film. As the plasma chamber is separated from the deposition chamber in the aforesaid apparatus, a low-temperature film deposition process can be used for forming organic films while preventing the substrate device from being bombarded directly by plasma. In addition, as there is a flow guiding device arranged at the outlet of the plasma chamber, the thermally cracked precursor is guided or disturbed and thus is prevented from overly concentrating at the outlet or the center of the substrate device. Thereby, surface roughness as well as uniformity of the organic film can be effectively improved.
    • 一种用于有机膜沉积的等离子体辅助装置,包括:等离子体室,其能够热裂解等离子体室中的前体; 以及沉积室,其与等离子体室一起引导以接收热裂化的前体。 在示例性实施例中,沉积室还包括衬底装置,其被设置用于使热裂化的前体沉积在其上以形成有机膜。 由于在上述装置中等离子体室与沉积室分离,所以可以使用低温膜沉积工艺来形成有机膜,同时防止基板装置被等离子体直接轰击。 此外,由于在等离子体室的出口处设置有引流装置,所以热裂化的前体被引导或干扰,从而防止过度集中在基板装置的出口或中心。 由此,可以有效地提高表面粗糙度以及有机膜的均匀性。