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1. 发明授权

US5858808A Process and auxiliary device for fabricating semiconductor devices 失效
标题翻译：用于制造半导体器件的工艺和辅助器件
公开(公告)号：US5858808A
公开(公告)日：1999-01-12
申请号：US784002
申请日：1997-01-15
申请人： Gunter Igel , Johann Schroeder
发明人： Gunter Igel , Johann Schroeder
IPC分类号： H01L21/304 , H01L21/78
CPC分类号： H01L21/78 , H01L21/304 , H01L2924/10157 , Y10S438/928 , Y10S438/942 , Y10S438/945 , Y10T29/41
摘要： An auxiliary device is constituted by a U-bolt-shaped, pincer-like implement which, during the fabrication of semiconductor devices with a mesa structure from a starting substrate forming a wafer, serves to transfer the outline geometry of the individual semiconductor devices from one side of the wafer to the back of the wafer. The implement has at least one tracer at the end of one of its arms for engaging a sawed groove and for guiding the implement along the sawed groove on one side of the wafer. At the end of the other arm, a marking device with at least one marking stylus is provided whereby the course of the at least one sawed grooved can be transferred from the front side of the wafer to the back, and scribed there in the form of auxiliary lines.
摘要翻译：辅助装置由U形螺栓形的钳状器具构成，在制造具有来自形成晶片的起始衬底的台面结构的半导体器件期间，用于将各个半导体器件的轮廓几何形状从一个晶片的一侧到晶片的背面。工具在其一个臂的端部具有至少一个示踪器，用于接合锯齿槽并沿着晶片的一侧上的锯齿槽引导工具。在另一个臂的末端，提供具有至少一个标记触针的标记装置，由此可以将至少一个锯切的槽的过程从晶片的前侧转移到后面，并且以辅助线。

2. 发明申请

US20080220541A1 Process for structuring a surface layer 审中-公开
标题翻译：用于构造表面层的方法
公开(公告)号：US20080220541A1
公开(公告)日：2008-09-11
申请号：US12152315
申请日：2008-05-14
申请人： Bernhard Wolf , Hans-Jurgen Gahle , Gunter Igel , Werner Baumann , Ralf Ehret , Mirko Lehmann
发明人： Bernhard Wolf , Hans-Jurgen Gahle , Gunter Igel , Werner Baumann , Ralf Ehret , Mirko Lehmann
IPC分类号： H01L21/00 , G01N33/53 , G01N33/566 , C12Q1/70 , G01N33/543
CPC分类号： H01L22/24 , G01B11/30 , G01N21/94
摘要： A process for structuring a surface layer of an object includes applying bio-components to the surface of the object that carry away surface material. The bio-components are contained in at least one of a nutrient and osmotic protective medium. The at least one of a nutrient and osmotic protective medium having the bio-components contained therein is removed after the surface material is carried away from the object surface.
摘要翻译：用于构造物体的表面层的方法包括将生物组分应用于携带表面材料的物体的表面。生物成分包含在营养和渗透保护介质中的至少一种中。在将表面材料从物体表面带走之后，除去其中含有生物成分的营养物和渗透保护介质中的至少一种。

3. 发明申请

US20060050935A1 Fingerprint recognition module having a thin-film structure and comprising resistive temperature-sensitive elements 有权
标题翻译：指纹识别模块具有薄膜结构并且包括电阻性温度敏感元件
公开(公告)号：US20060050935A1
公开(公告)日：2006-03-09
申请号：US10513331
申请日：2003-05-15
申请人： Burkhard Bustgens , Gerald Urban , Joachim Aurich , Gunter Igel
发明人： Burkhard Bustgens , Gerald Urban , Joachim Aurich , Gunter Igel
IPC分类号： G06K9/00
CPC分类号： G06K9/0002
摘要： The invention relates to a fingerprint recognition module comprising a substrate consisting of a material that is electrically insulating at least on its upper side and at least partially thermally insulating. Said substrate receives a composite of structured thin films on its surface, which directly forms a measuring field on the surface of the substrate for measuring a fingerprint. Said composite consists of an array of resistive, temperature-dependent elements, and contains strip conductors which connect the resistive, temperature-dependent elements to at least one connection field located on the substrate, outside the measuring field, and form part of the composite of structured thin films. The substrate also contains at least one microelectronic switching circuit which is electrically connected to the at least one connection field and contains the switching circuits by which means the thin film structures are controlled in order to heat the resistive, temperature-sensitive elements, the resistive, temperature-sensitive elements are read out, and the data is retransmitted.
摘要翻译：本发明涉及一种指纹识别模块，其包括由至少在其上侧电绝缘且至少部分热绝缘的材料构成的基板。所述衬底在其表面上接收结构化薄膜的复合物，其在衬底的表面上直接形成测量场，用于测量指纹。所述复合材料由电阻温度依赖元件阵列组成，并且包含带状导体，其将电阻性温度依赖元件连接到位于测量场外部的至少一个位于基板上的连接场，并形成部分复合材料结构薄膜。衬底还包含至少一个微电子开关电路，其电连接到至少一个连接场，并且包含切换电路，通过该开关电路来控制薄膜结构，以便加热电阻式温度敏感元件，电阻式，读出温度敏感元件，重发数据。

4. 发明授权

US5885897A Process for making contact to differently doped regions in a semiconductor device, and semiconductor device 失效
标题翻译：用于与半导体器件中的不同掺杂区域接触的工艺，以及半导体器件
公开(公告)号：US5885897A
公开(公告)日：1999-03-23
申请号：US781457
申请日：1997-01-10
申请人： Gunter Igel
发明人： Gunter Igel
IPC分类号： H01L29/872 , H01L21/285 , H01L21/336 , H01L29/45 , H01L29/47 , H01L29/78 , H01L21/44
CPC分类号： H01L21/28512 , H01L29/456 , H01L29/66712 , H01L29/7802 , H01L29/41766
摘要： A process is disclosed for making contact to differently doped regions in a semiconductor device which are disposed in a silicon substrate in different depths, a first region with a first dopant concentration and/or conductivity type and the smaller depth being disposed in a second region with a second dopant concentration and/or conductivity type and the greater depth, and a first metal layer being deposited on the first region. A second metal layer is deposited on a portion of the first metal layer, and the structure is subjected to a heat treatment in which contact is made to the first region through the first metal layer and to the second region through the first metal layer and the second metal layer.
摘要翻译：公开了一种用于接触位于不同深度的硅衬底中的半导体器件中的不同掺杂区域的工艺，具有第一掺杂剂浓度和/或导电类型的第一区域，并且较小深度设置在具有第二区域的第二区域中，第二掺杂剂浓度和/或导电类型和更大的深度，以及沉积在第一区域上的第一金属层。第二金属层沉积在第一金属层的一部分上，并且对该结构进行热处理，其中通过第一金属层与第一区域接触并通过第一金属层与第二区域接触，第二金属层。

5. 发明授权

US5933715A Process for manufacturing discrete electronic devices 失效
标题翻译：用于制造分立电子设备的工艺
公开(公告)号：US5933715A
公开(公告)日：1999-08-03
申请号：US812293
申请日：1997-03-07
申请人： Gunter Igel , Ruediger Joachim Stroh
发明人： Gunter Igel , Ruediger Joachim Stroh
IPC分类号： H01L21/329 , H01L21/78 , H01L21/84 , H01L21/331 , H01L21/311 , H01L21/44 , H01L21/8222
CPC分类号： H01L29/6609 , H01L21/78 , H01L21/84 , H01L29/66136 , H01L29/66143 , Y10S438/978
摘要： A process for manufacturing discrete electronic devices with active structures in an SOI (silicon-on-insulator) substrate which is thickened by an epitaxial layer and whose surface has a orientation, said process comprising the steps of: anisotropically etching the first silicon layer to form a moat having a diameter tapering in the direction of the insulator layer, said moat extending to the insulator layer; forming an insulating layer on the sidewalls of the moat; removing a portion of the insulator layer adjoining the moat to expose a portion of the second silicon layer, which is separated from the first silicon layer by the insulator layer; forming the active structure in the second silicon layer below the portion of the insulator layer which was removed; and depositing a contact layer on the insulating layer and the active element for making contact to the active structure.
摘要翻译：一种在SOI（绝缘体上硅）衬底中制造具有有源结构的分立电子器件的方法，其被外延层增厚并且其表面具有<100>取向，所述方法包括以下步骤：各向异性蚀刻第一硅以形成直径在绝缘体层的方向上逐渐变细的护城河，所述护城河延伸到绝缘体层; 在护城河的侧壁上形成绝缘层; 去除与护城河相邻的绝缘体层的一部分，以暴露由绝缘体层与第一硅层分离的第二硅层的一部分; 在除去的绝缘体层的部分下方的第二硅层中形成有源结构; 以及在所述绝缘层和所述有源元件上沉积接触层以与所述有源结构接触。

6. 发明授权

US5890807A Method for identifying an apparatus or device utilizing a randomly produced characteristic thereof 失效
标题翻译：利用其随机产生的特征识别装置或装置的方法
公开(公告)号：US5890807A
公开(公告)日：1999-04-06
申请号：US735093
申请日：1996-10-22
申请人： Gunter Igel , Siegfried Heinrich
发明人： Gunter Igel , Siegfried Heinrich
IPC分类号： H01L23/544 , G06K9/00 , G06K9/46 , G06K9/48
CPC分类号： H01L23/544 , H01L2924/0002
摘要： A method identifying components is disclosed. Measured values of a randomly produced property of the component are recorded. The measured values are biuniquely assigned to the component by means of a characteristic parameter and the measured values accessibly storing the measured values, or a unique code assigned thereto. Further, the characteristic parameter are accessibly stored.
摘要翻译：公开了一种识别组件的方法。记录组件随机产生的性质的测量值。通过特征参数将测量值双重分配给组件，并且测量值可访问地存储测量值或分配给其的唯一代码。此外，可访问地存储特征参数。

7. 发明授权

US5824595A Method of separating electronic elements 失效
标题翻译：分离电子元件的方法
公开(公告)号：US5824595A
公开(公告)日：1998-10-20
申请号：US720771
申请日：1996-10-03
申请人： Gunter Igel , Martin Mall
发明人： Gunter Igel , Martin Mall
IPC分类号： B81C99/00 , H01L21/301 , H01L21/78 , H01L21/46
CPC分类号： H01L21/78 , Y10S438/977
摘要： A method for separating elements associated within a body includes creating a separation region within the body, between the elements, leaving a region of the body which is to be thinned. The method then requires depositing a delay layer on the body, with an opening around the separation region. The delay layer has a predetermined removal rate relative to the removal rate of the body. Lastly, the method requires removing a predetermined amount of the delay layer, the separation region, and the region of the body to be thinned. Preferably, the removing is accomplished by etching, such as plasma etching, and the etch rate of the delay layer is lower than the etch rate for the separation region. In a preferred method, the predetermined removal rate and the positions of the openings in the delay layer are selected so that upon after etching, the elements remaining have a predetermined locus dependent thickness. Alternatively, the delay layers may be formed from the base material, formed from a metallic material or made from a silicon dioxide (SiO.sub.2) material. The base material is preferably a semiconductor wafer and the elements are semiconductor based electronic elements.
摘要翻译：用于分离在身体内相关联的元件的方法包括在体内，元件之间产生分离区域，留下要被减薄的身体的区域。该方法然后需要在主体上沉积延迟层，其中围绕分离区域具有开口。延迟层相对于身体的去除速度具有预定的去除速率。最后，该方法需要去除预定量的延迟层，分离区域和待稀释的体的区域。优选地，通过诸如等离子体蚀刻的蚀刻来实现去除，并且延迟层的蚀刻速率低于分离区域的蚀刻速率。在优选的方法中，选择延迟层中的预定去除速率和开口的位置，使得在蚀刻之后，剩余的元素具有预定的轨迹依赖厚度。或者，延迟层可以由基材形成，由金属材料形成或由二氧化硅（SiO 2）材料制成。基材优选为半导体晶片，元件为基于半导体的电子元件。

8. 发明授权

US5789307A Method of separating electronic devices contained in a carrier 失效
标题翻译：分离载体中包含的电子装置的方法
公开(公告)号：US5789307A
公开(公告)日：1998-08-04
申请号：US797584
申请日：1997-02-07
申请人： Gunter Igel , Martin Mall
发明人： Gunter Igel , Martin Mall
IPC分类号： H01L23/12 , H01L21/301 , H01L21/78 , H01L21/60
CPC分类号： H01L21/78
摘要： A method of separating electronic devices contained in a carrier which are provided at the surface of the carrier and are covered by a protective layer. Openings are provided above separation regions between adjacent electronic devices. The material of the carrier is removed in the separation regions starting from the openings, and the electronic devices are, at least during the material-removing process, confined in the carrier by respective regions with a material removal property different from that of the carrier.
摘要翻译：一种分离装在载体表面并被保护层覆盖的载体中的电子装置的方法。在相邻电子设备之间的分离区域之上提供开口。载体的材料在从开口开始的分离区域中被去除，并且电子装置至少在材料去除过程中被各个区域限制在载体中，其具有不同于载体的材料去除性质。

9. 发明授权

US06460416B1 Capacitor structure and fabrication process 失效
标题翻译：电容器结构和制造工艺
公开(公告)号：US06460416B1
公开(公告)日：2002-10-08
申请号：US09112849
申请日：1998-07-10
申请人： Gunter Igel
发明人： Gunter Igel
IPC分类号： G01L912
CPC分类号： G01L9/0073 , G01L9/0075
摘要： The invention relates to a capacitor structure with two substrates (1) each having a capacitor electrode (3) deposited on its surface, the substrates (1) being joined together by bump structures located on both sides of the capacitor electrodes (3) such that the capacitor electrodes (3) lie opposite each other and form a capacitor, the distance d between the capacitor electrodes (3) being defined by the height of the bump structures, and measuring connections (5) being provided on one of the substrates (1) for making capacitance measurements.
摘要翻译：本发明涉及具有两个基板（1）的电容器结构，每个基板（1）的表面上沉积有电容器电极（3），基板（1）通过位于电容器电极（3）两侧的凸块结构连接在一起，使得电容器电极（3）彼此相对并形成电容器，电容器电极（3）之间的距离d由凸块结构的高度限定，并且测量连接（5）设置在一个基板（1）上）进行电容测量。

10. 发明授权

US5976901A Process for manufacturing semiconductor devices with active structures 失效
标题翻译：制造具有活性结构的半导体器件的工艺
公开(公告)号：US5976901A
公开(公告)日：1999-11-02
申请号：US804422
申请日：1997-02-21
申请人： Gunter Igel
发明人： Gunter Igel
IPC分类号： H01L21/78 , H01L27/02 , G01R31/26 , H01L21/66
CPC分类号： H01L21/78 , H01L27/0207
摘要： The invention relates to a process for manufacturing semiconductor devices with active device structures which are connected with one another in a wafer, the area of a semiconductor device being determined by process parameters and being substantially greater than the area of an active device structure. An improvement of the process is achieved by forming several like active device structures on each of the semiconductor devices.
摘要翻译：本发明涉及一种用于制造半导体器件的方法，所述半导体器件具有在晶片中彼此连接的有源器件结构，半导体器件的区域由工艺参数确定并且基本上大于有源器件结构的面积。通过在每个半导体器件上形成若干类似的有源器件结构来实现该工艺的改进。

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