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1. 发明申请

US20070133333A1 EFUSE SENSE CIRCUIT 失效
标题翻译： EFUSE SENSE电路
公开(公告)号：US20070133333A1
公开(公告)日：2007-06-14
申请号：US11297311
申请日：2005-12-08
申请人： William Hovis , Alan Leslie , Phil Paone , David Siljenberg , Salvatore Storino , Gregory Uhlmann
发明人： William Hovis , Alan Leslie , Phil Paone , David Siljenberg , Salvatore Storino , Gregory Uhlmann
IPC分类号： G11C17/18
CPC分类号： G11C17/18
摘要： An eFuse reference cell on a chip provides a reference voltage that is greater than a maximum voltage produced by an eFuse cell having an unblown eFuse on the chip but less than a minimum voltage produced by an eFuse cell having a blown eFuse on the chip. A reference current flows through a resistor and an unblown eFuse in the eFuse reference cell, producing the reference voltage. The reference voltage is used to create a mirrored copy of the reference current in the eFuse cell. The mirrored copy of the reference current flows through an eFuse in the eFuse cell. A comparator receives the reference voltage and the voltage produced by the eFuse cell. The comparator produces an output logic level responsive to the voltage produced by the eFuse cell compared to the reference voltage.
摘要翻译：芯片上的eFuse参考单元提供的参考电压大于由芯片上具有未引脚eFuse的eFuse单元产生的最小电压，但小于由芯片上具有熔断eFuse的eFuse单元产生的最小电压。参考电流流过eFuse参考电池中的电阻和非吹出eFuse，产生参考电压。参考电压用于在eFuse单元中创建参考电流的镜像副本。参考电流的镜像副本通过eFuse单元中的eFuse流动。比较器接收参考电压和eFuse单元产生的电压。比较器产生一个响应于eFuse电池与参考电压相比产生的电压的输出逻辑电平。

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