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1. 发明申请

US20080296627A1 Nitride semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20080296627A1
公开(公告)日：2008-12-04
申请号：US12155070
申请日：2008-05-29
申请人： Kentaro Watanabe , Shunsuke Minato , Giichi Marutsuki
发明人： Kentaro Watanabe , Shunsuke Minato , Giichi Marutsuki
IPC分类号： H01L21/28 , H01L29/06
CPC分类号： H01L21/28017 , H01L21/6835 , H01L21/743 , H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/40 , H01L2221/6835 , H01L2933/0016
摘要： In the nitride semiconductor device using the silicon substrate, the metal electrode formed on the silicon substrate has both ohmic contact property and adhesion, so that the nitride semiconductor device having excellent electric properties and reliability is obtained. The nitride semiconductor device includes a silicon substrate (2), a nitride semiconductor layer (10) formed on the silicon substrate (2), and metal electrodes (8, 8′) formed in contact with the silicon substrate (2). The metal electrodes (8, 8′) has first metal layers (4, 4′) which are formed in a shape of discrete islands and in contact with the silicon substrate (2), and second metal layers (6, 6′) which are in contact with the silicon substrate (2) exposed among the islands of the first metal layers (4, 4′) and are formed to cover the first metal layers (4, 4′). Further, the second metal layers (6, 6′) are made of a metal capable of forming ohmic contact with silicon, and the first metal layers (4, 4′) are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer (6,6′).
摘要翻译：在使用硅衬底的氮化物半导体器件中，形成在硅衬底上的金属电极具有欧姆接触性和粘合性，从而获得具有优异的电性能和可靠性的氮化物半导体器件。氮化物半导体器件包括硅衬底（2），形成在硅衬底（2）上的氮化物半导体层（10）和与硅衬底（2）接触形成的金属电极（8,8'）。金属电极（8,8'）具有形成离散岛状并与硅衬底（2）接触的第一金属层（4,4'），以及第二金属层（6,6'），其中与在第一金属层（4,4'）的岛之间暴露的硅衬底（2）接触并形成以覆盖第一金属层（4,4'）。此外，第二金属层（6,6'）由能够与硅形成欧姆接触的金属制成，并且第一金属层（4,4'）由含有金属和硅的合金制成，其中金属与第二金属层（6,6'）不同。

2. 发明申请

US20130072010A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20130072010A1
公开(公告)日：2013-03-21
申请号：US13630809
申请日：2012-09-28
申请人： Kentaro WATANABE , Shunsuke MINATO , Giichi MARUTSUKI
发明人： Kentaro WATANABE , Shunsuke MINATO , Giichi MARUTSUKI
IPC分类号： H01L21/28
CPC分类号： H01L21/28017 , H01L21/6835 , H01L21/743 , H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/40 , H01L2221/6835 , H01L2933/0016
摘要： A nitride semiconductor device includes a silicon substrate, a nitride semiconductor layer formed on the silicon substrate, and metal electrodes formed in contact with the silicon substrate. The metal electrodes has first metal layers which are formed in a shape of discrete islands and in contact with the silicon substrate, and second metal layers which are in contact with the silicon substrate exposed among the islands of the first metal layers and are formed to cover the first metal layers. Further, the second metal layers are made of a metal capable of forming ohmic contact with silicon, and the first metal layers are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer.
摘要翻译：氮化物半导体器件包括硅衬底，形成在硅衬底上的氮化物半导体层和与硅衬底接触形成的金属电极。金属电极具有形成离散岛状并与硅衬底接触的第一金属层和与第一金属层的岛之间暴露的硅衬底接触的第二金属层，并形成为覆盖第一层金属层。此外，第二金属层由能够与硅形成欧姆接触的金属制成，第一金属层由含有金属和硅的合金制成，其中金属与第二金属层不同。

3. 发明授权

US08786056B2 Semiconductor light emitting elements comprising a plating substrate with a projecting tab, or comprising an exposed seed layer 有权
标题翻译：半导体发光元件包括具有突出突片的电镀基板，或包括暴露的种子层
公开(公告)号：US08786056B2
公开(公告)日：2014-07-22
申请号：US13156150
申请日：2011-06-08
申请人： Kentaro Watanabe , Giichi Marutsuki , Yuya Yamakami
发明人： Kentaro Watanabe , Giichi Marutsuki , Yuya Yamakami
IPC分类号： H01L23/544
CPC分类号： H01L33/0075 , H01L33/0025 , H01L33/007 , H01L33/0079 , H01L2933/0033
摘要： A method of forming a semiconductor light emitting element. The method can include forming a seed layer on a semiconductor layer assembly including at least one nitride semiconductor layer. An insulating mask can be formed on the seed layer. The insulating mask can include a plurality of element areas separated by cross spaces. Each element area of the plurality of element areas can be connected to at least one of the other element areas of the plurality of element areas. The seed layer can be plated such that a plating substrate is formed in each of the plurality of element areas.
摘要翻译：一种形成半导体发光元件的方法。该方法可以包括在包括至少一个氮化物半导体层的半导体层组件上形成晶种层。可以在种子层上形成绝缘掩模。绝缘掩模可以包括由交叉空间分开的多个元件区域。多个元件区域中的每个元件区域可以连接到多个元件区域中的至少一个其它元件区域。种子层可以进行电镀，使得在多个元件区域中的每一个中形成镀覆衬底。

4. 发明授权

US08299501B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08299501B2
公开(公告)日：2012-10-30
申请号：US12155070
申请日：2008-05-29
申请人： Kentaro Watanabe , Shunsuke Minato , Giichi Marutsuki
发明人： Kentaro Watanabe , Shunsuke Minato , Giichi Marutsuki
IPC分类号： H01L21/28
CPC分类号： H01L21/28017 , H01L21/6835 , H01L21/743 , H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/40 , H01L2221/6835 , H01L2933/0016
摘要： In the nitride semiconductor device using the silicon substrate, the metal electrode formed on the silicon substrate has both ohmic contact property and adhesion, so that the nitride semiconductor device having excellent electric properties and reliability is obtained. The nitride semiconductor device includes a silicon substrate (2), a nitride semiconductor layer (10) formed on the silicon substrate (2), and metal electrodes (8, 8′) formed in contact with the silicon substrate (2). The metal electrodes (8, 8′) has first metal layers (4, 4′) which are formed in a shape of discrete islands and in contact with the silicon substrate (2), and second metal layers (6, 6′) which are in contact with the silicon substrate (2) exposed among the islands of the first metal layers (4, 4′) and are formed to cover the first metal layers (4, 4′). Further, the second metal layers (6, 6′) are made of a metal capable of forming ohmic contact with silicon, and the first metal layers (4, 4′) are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer (6,6′).
摘要翻译：在使用硅衬底的氮化物半导体器件中，形成在硅衬底上的金属电极具有欧姆接触性和粘合性，从而获得具有优异的电性能和可靠性的氮化物半导体器件。氮化物半导体器件包括硅衬底（2），形成在硅衬底（2）上的氮化物半导体层（10）和与硅衬底（2）接触形成的金属电极（8,8'）。金属电极（8,8'）具有形成离散岛状并与硅衬底（2）接触的第一金属层（4,4'），以及第二金属层（6,6'），其中与在第一金属层（4,4'）的岛之间暴露的硅衬底（2）接触并形成以覆盖第一金属层（4,4'）。此外，第二金属层（6,6'）由能够与硅形成欧姆接触的金属制成，并且第一金属层（4,4'）由含有金属和硅的合金制成，其中金属与第二金属层（6,6'）不同。

5. 发明申请

US20110303894A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND FABRICATING METHOD 有权
标题翻译：半导体发光元件和制造方法
公开(公告)号：US20110303894A1
公开(公告)日：2011-12-15
申请号：US13156150
申请日：2011-06-08
申请人： Kentaro Watanabe , Giichi Marutsuki , Yuya Yamakami
发明人： Kentaro Watanabe , Giichi Marutsuki , Yuya Yamakami
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/0075 , H01L33/0025 , H01L33/007 , H01L33/0079 , H01L2933/0033
摘要： A method of forming a semiconductor light emitting element. The method can include forming a seed layer on a semiconductor layer assembly including at least one nitride semiconductor layer. An insulating mask can be formed on the seed layer. The insulating mask can include a plurality of element areas separated by cross spaces. Each element area of the plurality of element areas can be connected to at least one of the other element areas of the plurality of element areas. The seed layer can be plated such that a plating substrate is formed in each of the plurality of element areas.
摘要翻译：一种形成半导体发光元件的方法。该方法可以包括在包括至少一个氮化物半导体层的半导体层组件上形成晶种层。可以在种子层上形成绝缘掩模。绝缘掩模可以包括由交叉空间分开的多个元件区域。多个元件区域中的每个元件区域可以连接到多个元件区域中的至少一个其它元件区域。种子层可以进行电镀，使得在多个元件区域中的每一个中形成镀覆衬底。

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