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1. 发明授权

US09431478B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09431478B2
公开(公告)日：2016-08-30
申请号：US14600142
申请日：2015-01-20
申请人： Yeong-Jong Jeong , Jeong-Yun Lee , Geo-Myung Shin , Dong-Suk Shin , Si-Hyung Lee , Seo-Jin Jeong
发明人： Yeong-Jong Jeong , Jeong-Yun Lee , Geo-Myung Shin , Dong-Suk Shin , Si-Hyung Lee , Seo-Jin Jeong
IPC分类号： H01L27/088 , H01L29/06 , H01L29/78 , B82Y10/00 , H01L29/775 , H01L29/41
CPC分类号： H01L29/7848 , B82Y10/00 , H01L21/823814 , H01L21/823821 , H01L21/823878 , H01L27/0886 , H01L27/0924 , H01L29/06 , H01L29/0653 , H01L29/0673 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/413 , H01L29/42392 , H01L29/775 , H01L29/78 , H01L29/7851 , H01L29/7853 , H01L29/78696
摘要： A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.
摘要翻译：一种半导体器件包括由场绝缘层限定并沿着第一方向延伸的第一多沟道有源图案，该第一多沟道有源图案包括第一部分，该第一部分具有在向上方向上进一步向上方突出的顶表面，所述场绝缘层和所述第一部分的两侧上的第二部分，所述第二部分具有连续轮廓的侧壁和在所述场绝缘层的顶表面上向上方向突出的顶表面，并且在向上方向上突出小于第一部分的顶表面的第一部分上的栅电极，在第一多通道有源图案的第一部分上并且沿着不同于第一方向的第二方向延伸的栅电极，以及在第一部分的第二部分上的第一源极/漏极区域第一多通道有源图案并接触场绝缘层。

2. 发明申请

US20160148930A1 SEMICONDUCTOR DEVICES INCLUDING A STRESSOR IN A RECESS AND METHODS OF FORMING THE SAME 审中-公开
公开(公告)号：US20160148930A1
公开(公告)日：2016-05-26
申请号：US15009276
申请日：2016-01-28
申请人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
发明人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
IPC分类号： H01L27/088 , H01L29/10 , H01L27/02 , H01L29/165 , H01L29/78
CPC分类号： H01L29/7848 , H01L21/823412 , H01L21/823425 , H01L27/0207 , H01L27/088 , H01L29/0847 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/4966 , H01L29/66492 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7836
摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

3. 发明申请

US20150214329A1 SEMICONDUCTOR DEVICES INCLUDING A STRESSOR IN A RECESS AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：包括压痕器的半导体器件及其形成方法
公开(公告)号：US20150214329A1
公开(公告)日：2015-07-30
申请号：US14680349
申请日：2015-04-07
申请人： Dong-Suk SHIN , Hyun-Chul KANG , Dong-Hyun ROH , Pan-Kwi PARK , Geo-Myung SHIN , Nae-In LEE , Chul-Woong LEE , Hoi-Sung CHUNG , Young-Tak KIM
发明人： Dong-Suk SHIN , Hyun-Chul KANG , Dong-Hyun ROH , Pan-Kwi PARK , Geo-Myung SHIN , Nae-In LEE , Chul-Woong LEE , Hoi-Sung CHUNG , Young-Tak KIM
IPC分类号： H01L29/66
CPC分类号： H01L29/7848 , H01L21/823412 , H01L21/823425 , H01L27/0207 , H01L27/088 , H01L29/0847 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/4966 , H01L29/66492 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7836
摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.
摘要翻译：提供了包括凹部中的应力器的半导体器件和形成半导体器件的方法。所述方法可以包括在有源区中形成沟槽，并且沟槽可以包括有源区的切口部分。所述方法还可以包括在沟槽中形成嵌入的应力源。嵌入式应力器可以包括下半导体层和上半导体层，其宽度比下半导体层的宽度窄。上半导体层的一侧可以不与下半导体层的一侧对准，并且上半导体层的最上表面可以高于有源区的最上表面。

4. 发明申请

US20130089961A1 Methods of Forming Semiconductor Devices Including an Epitaxial Layer and Semiconductor Devices Formed Thereby 审中-公开
标题翻译：形成包括外延层和由此形成的半导体器件的半导体器件的方法
公开(公告)号：US20130089961A1
公开(公告)日：2013-04-11
申请号：US13615990
申请日：2012-09-14
申请人： Geo Myung SHIN , Myungsun KIM , Dongsuk SHIN , Naein LEE
发明人： Geo Myung SHIN , Myungsun KIM , Dongsuk SHIN , Naein LEE
IPC分类号： H01L21/336
CPC分类号： H01L21/28052 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L29/1054 , H01L29/665 , H01L29/66651 , H01L29/78
摘要： Methods of forming a semiconductor device are provided. The methods may include forming an epitaxial layer by growing a crystalline layer using a semiconductor source gas in a reaction chamber, and by etching the crystalline layer using an etching gas in the reaction chamber.
摘要翻译：提供了形成半导体器件的方法。该方法可以包括通过在反应室中使用半导体源气体生长晶体层，并且通过在反应室中使用蚀刻气蚀刻该晶体层来形成外延层。

5. 发明授权

US09257520B2 Semiconductor devices including a stressor in a recess and methods of forming the same 有权
公开(公告)号：US09257520B2
公开(公告)日：2016-02-09
申请号：US14680349
申请日：2015-04-07
申请人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
发明人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
IPC分类号： H01L29/49 , H01L29/78 , H01L21/8234 , H01L29/66
CPC分类号： H01L29/7848 , H01L21/823412 , H01L21/823425 , H01L27/0207 , H01L27/088 , H01L29/0847 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/4966 , H01L29/66492 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7836
摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

6. 发明授权

US09129952B2 Semiconductor devices including a stressor in a recess and methods of forming the same 有权
标题翻译：包括凹部中的应力器的半导体器件及其形成方法
公开(公告)号：US09129952B2
公开(公告)日：2015-09-08
申请号：US14033718
申请日：2013-09-23
申请人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
发明人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
IPC分类号： H01L29/78 , H01L29/49 , H01L21/8234 , H01L29/66
CPC分类号： H01L29/7848 , H01L21/823412 , H01L21/823425 , H01L27/0207 , H01L27/088 , H01L29/0847 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/4966 , H01L29/66492 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7836
摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.
摘要翻译：提供了包括凹部中的应力器的半导体器件和形成半导体器件的方法。所述方法可以包括在有源区中形成沟槽，并且沟槽可以包括有源区的切口部分。所述方法还可以包括在沟槽中形成嵌入的应力源。嵌入式应力器可以包括下半导体层和上半导体层，其宽度比下半导体层的宽度窄。上半导体层的一侧可以不与下半导体层的一侧对准，并且上半导体层的最上表面可以高于有源区的最上表面。

7. 发明授权

US09024385B2 Semiconductor devices including a stressor in a recess and methods of forming the same 有权
公开(公告)号：US09024385B2
公开(公告)日：2015-05-05
申请号：US14033718
申请日：2013-09-23
申请人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
发明人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
IPC分类号： H01L29/78 , H01L29/49 , H01L21/8234 , H01L29/66
摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

8. 发明申请

US20140138745A1 SEMICONDUCTOR DEVICES INCLUDING A STRESSOR IN A RECESS AND METHODS OF FORMING THE SAME 有权
标题翻译：包括压痕器的半导体器件及其形成方法
公开(公告)号：US20140138745A1
公开(公告)日：2014-05-22
申请号：US14033718
申请日：2013-09-23
申请人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
发明人： Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
IPC分类号： H01L29/78
CPC分类号： H01L29/7848 , H01L21/823412 , H01L21/823425 , H01L27/0207 , H01L27/088 , H01L29/0847 , H01L29/1095 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/4966 , H01L29/66492 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7836
摘要： Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.
摘要翻译：提供了包括凹部中的应力器的半导体器件和形成半导体器件的方法。所述方法可以包括在有源区中形成沟槽，并且沟槽可以包括有源区的切口部分。所述方法还可以包括在沟槽中形成嵌入的应力源。嵌入式应力器可以包括下半导体层和上半导体层，其宽度比下半导体层的宽度窄。上半导体层的一侧可以不与下半导体层的一侧对准，并且上半导体层的最上表面可以高于有源区的最上表面。

9. 发明申请

US20150318399A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150318399A1
公开(公告)日：2015-11-05
申请号：US14600142
申请日：2015-01-20
申请人： Yeong-Jong JEONG , Jeong-Yun LEE , Geo-Myung SHIN , Dong-Suk SHIN , Si-Hyung LEE , Seo-Jin JEONG
发明人： Yeong-Jong JEONG , Jeong-Yun LEE , Geo-Myung SHIN , Dong-Suk SHIN , Si-Hyung LEE , Seo-Jin JEONG
IPC分类号： H01L29/78 , H01L29/06 , H01L27/088
CPC分类号： H01L29/7848 , B82Y10/00 , H01L21/823814 , H01L21/823821 , H01L21/823878 , H01L27/0886 , H01L27/0924 , H01L29/06 , H01L29/0653 , H01L29/0673 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/413 , H01L29/42392 , H01L29/775 , H01L29/78 , H01L29/7851 , H01L29/7853 , H01L29/78696
摘要： A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.
摘要翻译：一种半导体器件包括由场绝缘层限定并沿着第一方向延伸的第一多沟道有源图案，该第一多沟道有源图案包括第一部分，该第一部分具有在向上方向上进一步向上方突出的顶表面，所述场绝缘层和所述第一部分的两侧上的第二部分，所述第二部分具有连续轮廓的侧壁和在所述场绝缘层的顶表面上向上方向突出的顶表面，并且在向上方向上突出小于第一部分的顶表面的第一部分上的栅电极，在第一多通道有源图案的第一部分上并且沿着不同于第一方向的第二方向延伸的栅电极，以及在第一部分的第二部分上的第一源极/漏极区域第一多通道有源图案并接触场绝缘层。

10. 发明授权

US08236733B2 Method of forming a precursor solution for metal organic deposition and method of forming superconducting thick film using the same 有权
标题翻译：形成金属有机沉积的前体溶液的方法和使用其形成超导厚膜的方法
公开(公告)号：US08236733B2
公开(公告)日：2012-08-07
申请号：US12506189
申请日：2009-07-20
申请人： Sang-Im Yoo , Seung-Hyun Moon , Geo-Myung Shin
发明人： Sang-Im Yoo , Seung-Hyun Moon , Geo-Myung Shin
IPC分类号： H01L39/24 , C09D5/24 , B05D5/12
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1241 , C23C18/1245
摘要： A method for forming a precursor solution for metal organic deposition includes dissolving an additive-free first precursor composed of a rare earth element, a second precursor comprising barium, and a third precursor composed of copper into an acid to form a compound solution; dissolving the compound solution into a solvent to form a pre-precursor solution; and evaporating the solvent from the pre-precursor solution to form a precursor solution having an increased viscosity; wherein at least one of the first precursor, the second precursor, and the third precursor is dissolved into a fluorine-free acid. A method for forming a superconducting thick film from the above precursor solution includes forming a thick film by a one-time coating of the precursor solution having an increased viscosity onto a biaxially-textured base followed by heat treating to form the superconducting thick film having a thickness of about 0.2 μm or more and having no cracking.
摘要翻译：用于形成金属有机沉积的前体溶液的方法包括将由稀土元素组成的无添加剂的第一前体，包含钡的第二前体和由铜组成的第三前体溶解在酸中以形成化合物溶液; 将化合物溶液溶解在溶剂中以形成前体前体溶液; 并从前体前体溶液中蒸发溶剂以形成粘度增加的前体溶液; 其中所述第一前体，所述第二前体和所述第三前体中的至少一个溶解于无氟酸中。从上述前体溶液形成超导厚膜的方法包括通过将具有增加的粘度的前体溶液的一次性涂层一次性涂覆到双轴织构基底上，然后进行热处理形成厚膜，以形成具有厚度为约0.2μm以上且没有开裂。

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