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    • 1. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD TO FABRICATE THEREOF
    • 半导体器件及其制造方法
    • WO2007071809A1
    • 2007-06-28
    • PCT/FI2005/050482
    • 2005-12-22
    • REFLEKRON OYOKHOTNIKOV, OlegGUINA, MirceaGRUDININ, Anatoly
    • OKHOTNIKOV, OlegGUINA, MirceaGRUDININ, Anatoly
    • H01S3/113G02F1/35H01S3/098
    • H01S3/1118G02F1/3523H01S3/067H01S3/113
    • The invention concerns a design of a semiconductor saturable absorber that offers a convenient and reliable way to decrease absorption recovery time. The design employs a multiple-layer heterostructure where at least one layer, called nonlinear layer, is used for absorbing a signal light. Additional layer(s) adjoin the nonlinear layer(s) and have a smaller band-gap then the nonlinear layer(s). The role of these narrow band-gap layers is to collect the carriers generated within the nonlinear layer(s) thus reducing the recovery time of absorption in nonlinear layers. We call these layers collectors. The control of the recovery time is achieved by means of the following measures a) band-gap engineering of the nonlinear layers such that the signal light will be absorbed in this layers that exhibit higher band-gap then surrounding layers and allow for an efficient sweep-out of the carriers towards surrounding layers; b) band-gap engineering of layers surrounding the nonlinear layers so that they will act as effective collectors for the carriers generated by absorption of the signal light in the nonlinear layers. The width of the absorber and collector layers is optimized to further enhance the nonlinearity and speed of the device The absorber can be used either in transmission or reflection mode. In the later configuration, the absorber is attached to a mirror that for example can be grown by molecular-beam-epitaxy monolithically to the absorbing layers, or it is obtained by deposition of dielectric or metallic layers.
    • 本发明涉及半导体可饱和吸收体的设计,其提供了一种方便可靠的方法来减少吸收恢复时间。 该设计采用多层异质结构,其中至少一层称为非线性层用于吸收信号光。 附加层与非线性层相邻并且具有较小的带隙,然后是非线性层。 这些窄带隙层的作用是收集在非线性层内产生的载流子,从而减少非线性层中的吸收恢复时间。 我们称这些层收集器。 通过以下措施来实现恢复时间的控制:a)非线性层的带隙工程,使得信号光将被吸收在该层中,其表现出更高的带隙然后围绕层并且允许有效的扫描 - 将载体转移到周围层; b)围绕非线性层的层的带隙工程,使得它们将用作通过吸收非线性层中的信号光产生的载流子的有效收集器。 吸收器和收集器层的宽度被优化以进一步增强装置的非线性和速度。吸收器可以用于透射或反射模式。 在后面的配置中,吸收器附着到例如可以通过分子束外延生长到反射镜的一个反射镜上,或者通过沉积电介质或金属层来获得。
    • 3. 发明申请
    • SEMICONDUCTOR SATURABLE ABSORBER REFLECTOR AND METHOD TO FABRICATE THEREOF
    • 半导体可饱和吸收体反射器及其制造方法
    • WO2006106170A1
    • 2006-10-12
    • PCT/FI2005/050111
    • 2005-04-06
    • REFLEKRON OYOKHOTNIKOV, OlegGUINA, MirceaGRUDININ, Anatoly
    • OKHOTNIKOV, OlegGUINA, MirceaGRUDININ, Anatoly
    • H01S3/098H01S3/08H01L21/20G02F1/35
    • G02F1/3523B82Y10/00B82Y20/00G02F2201/346G02F2202/101G02F2202/102G02F2202/108H01S3/08059H01S3/1118H01S3/113
    • The invention relates to a design of a semiconductor saturable absorber that offers a convenient and reliable way to control/decrease the recovery time of the absorption. According to this invention, the absorption recovery time is controlled during the epitaxial growth by using lattice-mismatched layer(s) to induce dislocations, i.e. misfit and threading dislocations, and implicitly non-radiative recombination centers within the nonlinear absorbing region. These so called lattice reformation layer(s) are interposed between the distributed Bragg reflector (DBR) and the nonlinear absorption region, containing quantum-wells, quantum-dots or bulk semiconductor material. The thickness and composition of the lattice reformation layer(s) is an instrumental to control the amount of non-radiative recombination centers used to trap the optically excited carriers generated in the absorption region. Exemplary embodiments include structures of semiconductor saturable absorber mirrors operating at the wavelength ranges centered around 1.55 µm and 1.04 µm, respectively.
    • 本发明涉及半导体可饱和吸收体的设计,其提供了一种方便可靠的方法来控制/减少吸收的恢复时间。 根据本发明,通过使用晶格失配层诱导位错,即失配和穿透位错以及非线性吸收区内的隐式非辐射复合中心,在外延生长期间控制吸收恢复时间。 这些所谓的晶格重构层被插入在分布式布拉格反射器(DBR)和包含量子阱,量子点或体半导体材料的非线性吸收区之间。 晶格重构层的厚度和组成对于控制用于捕获在吸收区域中产生的光学激发载流子的非辐射复合中心的量是有用的。 示例性实施例包括分别在以1.55μm和1.04μm为中心的波长范围内操作的半导体可饱和吸收镜的结构。
    • 4. 发明申请
    • OPTICAL MODULATOR
    • 光学调制器
    • WO2003091800A1
    • 2003-11-06
    • PCT/FI2003/000299
    • 2003-04-16
    • NOKIA CORPORATIONMODULIGHT OYOKHOTNIKOV, OlegGUINA, Mircea
    • OKHOTNIKOV, OlegGUINA, Mircea
    • G02F1/35
    • G02F1/3523H01S3/067H01S3/1061H01S3/1118H01S5/0265H01S5/0602H01S5/0609
    • The invention relates to an optically pumped multilayered modulator having surface-normal geometry. The multilayer structure comprises an absorber section through which an optical signal (401) to be modulated is coupled from an input (400) to an output (400). The multilayer structure further comprises control means for supplying a control signal for controlling the transmission characteristics of the absorber section, The control signal is generated by an in-plane waveguide-type laser integrated monolithically with the saturable absorption region. The in-plane control laser includes waveguide regions (405) and multiple-quantum-well layers (409) used as a gain medium. The laser beam is adapted to travel through the absorber section in order to modulate the transmission characteristics of the absorber section.
    • 本发明涉及具有表面法线几何形状的光泵浦多层调制器。 多层结构包括吸收器部分,待调制的光信号(401)从输入端(400)耦合到输出端(400)。 多层结构还包括用于提供用于控制吸收体部分的传输特性的控制信号的控制装置。控制信号由与可饱和吸收区域整体集成的面内波导型激光器产生。 面内控制激光器包括用作增益介质的波导区域(405)和多量子阱层(409)。 激光束适于穿过吸收器部分,以便调节吸收器部分的传输特性。
    • 6. 发明申请
    • METHOD FOR ORGANIZING A MODE-LOCKED PULSE TRAIN BY PUMP MODULATION
    • 通过泵浦调制来组织模式锁定的脉冲串的方法
    • WO2003077420A2
    • 2003-09-18
    • PCT/FI2003/000173
    • 2003-03-07
    • OPTOELECTRONICS RESEARCH CENTREOKHOTNIKOV, OlegGUINA, Mircea
    • OKHOTNIKOV, OlegGUINA, Mircea
    • H03K
    • H01S3/1118H01S3/067H01S3/094076H01S3/09415H01S3/10046H01S3/1022
    • The present invention describes a method to achieve stabilization of the repetition rate in a passive harmonic mode-locked fiber laser employing semiconductor saturable absorbers. The pulse organization is accomplished by electrically modulating the amplifier pump source that in turn optically modulates the saturable loss of semiconductor absorber. Moreover owing on an efficient modulation mechanism of the cavity loss, the method can be used to generate an actively mode-lock pulse train. The invention offers the advantages of an actively modulated mode-locked laser while maintaining the simplicity and the cost effectiveness of a passive mode-locked system. We expect that this approach combined with the use of regenerative modulation technique and polarization-maintaining fiber components will permit the generation of the dropout-free pulse trains at gigahertz repetition rates with good long-term stability and minimal cost.
    • 本发明描述了一种在使用半导体可饱和吸收体的无源谐波锁模光纤激光器中实现重复率稳定的方法。 脉冲组织是通过对放大器泵浦源进行电调制来实现的,该放大器泵浦源依次光学调制半导体吸收器的可饱和损耗。 此外,由于腔体损耗的有效调制机制,该方法可用于产生主动锁模脉冲序列。 本发明提供了主动调制的锁模激光器的优点,同时保持了被动锁模系统的简单性和成本效益。 我们期望这种方法结合使用再生调制技术和保偏光纤元件,将允许以千兆赫重复频率产生无丢包脉冲序列,具有良好的长期稳定性和最低的成本。