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    • 6. 发明申请
    • CIRCUIT AND METHOD FOR RAPID READING OF AN IMAGE CELL
    • 电路及方法快速阅读的图像CELL
    • WO1998019453A2
    • 1998-05-07
    • PCT/DE1997002529
    • 1997-10-30
    • INSTITUT FÜR MIKROELEKTRONIK STUTTGARTSEGER, UlrichAPEL, UweHÖFFLINGER, BerndGRAF, Heinz-Gerd
    • INSTITUT FÜR MIKROELEKTRONIK STUTTGART
    • H04N03/15
    • H04N9/045H04N5/374
    • Disclosed is a circuit and method for rapid reading of an image cell for an image sensor chip comprising a plurality of image cells in the form of a two dimensional array and a read-out logic designed to represent a high input signal dynamic on a reduced output signal dynamic. The light sensitive element of the image cell is connected to one of the main electrodes of a first MOS transistor (M0) and the gate of a second MOS transistor (M1) so that the gate and the other main electrode of the first MOS transistor (M0) are short-circuited and subjected to a constant potential (Vss) so that a logarithmic characteristic curve can arise and an output signal amplifier can be connected to the second main electrode of the second MOS transistor (M1). A method for rapid reading of an image cell is also disclosed. The invention is characterized in that another MOS transistor (Mr1) with the same type of charge carrier is connected in parallel to the first transistor, one main electrode of said other transistor being short-circuited with one main electrode of the first MOS transistor (M0), the other main electrode of said other transistor being short-circuited with the other main electrode of the first transistor MOS (M0), and a reset tension pulse can be fed to the gate electrode of the other MOS transistor (Mr1).
    • 描述了一种电路装置,用于快速读出图像单元具有布置在图像单元的二维阵列形式的多个这样的图像传感器芯片,并具有一个读出逻辑,其被设计用于在减小的输出信号动态的,成像的高输入信号动态其中,所述图像单元的光敏元件与 第一MOS晶体管(M0)的和为第二MOS晶体管(M1)的栅极处的一个主电极被连接到栅极线和所述第一MOS晶体管的(M0)的另一个主电极短路和(在固定的电势Vss )被设置,使得获得的对数特性,并且(在第二MOS晶体管M1的第二主电极)连接的Ausganssignalverstärker。 另外,将描述用于高速地读出这些图像电池的方法。 本发明的特征在于:一个第一MOS晶体管(M0)被并联连接的另一MOS晶体管相同的载流子类型的(MR1),其一个主电极连接到第一MOS晶体管的(M0)的一个主电极和另一个 主电极连接到第一MOS晶体管(M0)的另一主电极被短路并给另一MOS晶体管的栅电极(MR1)是复位电压脉冲施加。
    • 9. 发明申请
    • METHOD AND CIRCUIT CONFIGURATION FOR COMPENSATING VARIATIONS IN THE CMOS IMAGE SENSORS RESULTING FROM TEMPERATURE, VOLTAGE AND PRODUCTION
    • 方法与电路补偿温度,电压和生产相关的年龄变化的CMOS图像传感器
    • WO1999003262A1
    • 1999-01-21
    • PCT/DE1997002528
    • 1997-10-30
    • INSTITUT FÜR MIKROELEKTRONIK STUTTGARTAPEL, UweSEGER, UlrichGRAF, Heinz-GerdPOSTEL, UdoSCHÖNHERR, Hans-JörgARMBRUSTER, Armin
    • INSTITUT FÜR MIKROELEKTRONIK STUTTGART
    • H04N05/217
    • H04N5/361H04N5/374
    • Disclosed are a method and a circuit configuration designed to compensate variations resulting from temperature, voltage and production by means of CMOS image sensors which are exposed to radiation and generate, depending on the radiation intensity, electrical output signals below a logarithmic curve. The inventive method comprises the following steps: at least two reference CMOS sensors, which are maintained at the same temperature as the CMOS image sensors to be compensated but are not irradiated, are used to generate two reference signals, one of which corresponds to a reference dark value and the other, as a result of electric power application thereupon, to a reference light value. The reference signals are amplified separately from each other in such a way that the amplification conditions are identical to those needed for amplifying the output signals to be compensated. Said reference signals are sent to an A/D converter with a thermal regime identical to that of the electrical output signals form the CMOS image sensors to be compensated. For each CMOS image sensor point at least one correction value is stored in a memory unit. The correction value, which enables variations resulting from temperature, voltage and production to be compensated, is fed into the system to correct the output signal to be compensated and obtain FPN=(fixed-pattern-noise)-corrected output signals. The FPN-corrected output signals and the reference signals received ared fed to the A/D converter, where the output signals from the CMOS image sensors are compensated and converted into digital singals. The circuit configuration according to the invention is so designed as to allow implementation of the method described.
    • 的方法和用于补偿的电路布置将在温度,电压和在CMOS图像传感器,其被暴露于辐射和作为照射强度的函数产生电输出信号,这些信号都受到了对数特性制造有关的变化进行说明。 本发明的方法的特征在于以下工艺步骤的组合:通过在相同的温度水平保持在至少两个参考CMOS传感器,诸如那些,但不照射CMOS图像传感器进行补偿的手段,生成两个基准信号,其中的一个 参考暗值和通过加载电流,基准亮值的装置相应的其它。 所产生的参考信号被分别扩增voneinader使得扩增条件是相同的补偿的输出信号的增益。 基准信号与相同的电输出信号提供给补偿CMOS图像传感器转变温度到A / D转换器。 在存储单元中,将被补偿为每个单独的修正值CMOS图像传感器点被至少存储,这是合适的,以补偿制造变化以及在被加载用于所述校正的特定将被补偿的输出信号,所以FPN(=固定模式噪声)获得-corrected输出 , 得到的FPN校正的输出信号,以及所述参考信号被提供给A / D转换器,其中补偿的CMOS图像传感器的输出信号,并转换成数字信号。 本发明的电路装置用于执行该方法。