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1. 发明申请

WO1997050116A1 A CAPACITOR AND METHODS OF FORMING A CAPACITOR 审中-公开
标题翻译：电容器和形成电容器的方法
公开(公告)号：WO1997050116A1
公开(公告)日：1997-12-31
申请号：PCT/US1997010574
申请日：1997-06-23
申请人： MICRON TECHNOLOGY, INC. , GRAETTINGER, Thomas, M. , SCHUELE, Paul, J. , McCLURE, Brent
发明人： MICRON TECHNOLOGY, INC.
IPC分类号： H01L21/3205
CPC分类号： H01L27/10852 , H01L21/3205 , H01L28/55
摘要： A method for forming a capacitor includes forming a substrate (30) having a node location to which electrical connection to a capacitor is to be made; forming an inner capacitor plate (60) over the node location, the inner capacitor plate having an exposed sidewall (61); forming an oxidation barrier layer (70) over the exposed inner capacitor plate sidewall; forming a capacitor dielectric plate (90) over the inner capacitor plate, the oxidation barrier layer restricting oxidation of the inner capacitor plate sidewall during formation of the capacitor dielectric plate; and forming an outer capacitor plate (100) over the capacitor dielectric plate. A capacitor is further described which includes an inner capacitor plate having at least one sidewall; an oxidation barrier layer positioned in covering relation to the at least one sidewall; a capacitor dielectric plate positioned over the inner capacitor plate; and an outer capacitor plate positioned over the capacitor dielectric plate. In the preferred form of the invention, an insulating dielectric layer (80) is positioned on the oxidation barrier layer (70), the insulating dielectric layer being of a different composition than the oxidation barrier layer.
摘要翻译：形成电容器的方法包括：形成具有与电容器进行电连接的节点位置的衬底（30）; 在所述节点位置上形成内部电容器板（60），所述内部电容器板具有暴露的侧壁（61）; 在暴露的内部电容器板侧壁上形成氧化阻挡层（70）; 在所述内部电容器板上形成电容器电介质板，所述氧化阻挡层在形成所述电容器电介质板期间限制所述内部电容器侧壁的氧化; 以及在所述电容器电介质板上形成外部电容器板（100）。进一步描述一种电容器，其包括具有至少一个侧壁的内部电容器板; 定位成覆盖所述至少一个侧壁的氧化阻挡层; 位于内部电容器板上的电容器电介质板; 以及位于电容器电介质板上的外部电容器板。在本发明的优选形式中，绝缘电介质层（80）位于氧化阻挡层（70）上，绝缘电介质层具有与氧化阻挡层不同的组成。

2. 发明申请

WO2013043184A1 USE OF ETCH PROCESS POST WORDLINE DEFINITION TO IMPROVE DATA RETENTION IN A FLASH MEMORY DEVICE 审中-公开
标题翻译： ETCH过程的使用在字幕定义中改进闪存存储器件中的数据保持
公开(公告)号：WO2013043184A1
公开(公告)日：2013-03-28
申请号：PCT/US2011/052850
申请日：2011-09-22
申请人： INTEL CORPORATION , KOVAL, Randy, J , HINEMAN, Max, F. , WEIMER, Ronald, A. , SHAMANNA, Vinayak, K. , GRAETTINGER, Thomas, M. , KUEBER, William, R. , LARSEN, Christopher , SCHRINSKY, Alex, J.
发明人： KOVAL, Randy, J , HINEMAN, Max, F. , WEIMER, Ronald, A. , SHAMANNA, Vinayak, K. , GRAETTINGER, Thomas, M. , KUEBER, William, R. , LARSEN, Christopher , SCHRINSKY, Alex, J.
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L21/30604 , H01L21/76 , H01L27/11521 , H01L27/11568 , H01L29/513 , H01L29/788 , H01L29/7881 , H01L29/792
摘要： Embodiments of the present disclosure describe techniques and configurations relating to use of an etch process post wordline definition to improve data retention in a flash memory device. In one embodiment, a method includes forming a plurality of wordline structures on a substrate, wherein individual wordline structures of the plurality of wordline structures include a control gate having an electrically conductive material and a cap having an electrically insulative material formed on the control gate, depositing an electrically insulative material to form a liner on a surface of the individual wordline structures, and etching the liner to remove at least a portion of the liner. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例描述与使用蚀刻处理后字幕定义相关的技术和配置以改善闪存设备中的数据保持。在一个实施例中，一种方法包括在衬底上形成多个字线结构，其中多个字线结构中的各个字线结构包括具有导电材料的控制栅极和在控制栅极上形成有电绝缘材料的盖，沉积电绝缘材料以在单个字线结构的表面上形成衬垫，以及蚀刻衬垫以去除衬垫的至少一部分。可以描述和/或要求保护其他实施例。

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