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1. 发明申请

WO2006105466A2 METHOD AND APPARATUS FOR SELECTIVE DEPOSITION OF MATERIALS TO SURFACES AND SUBSTRATES 审中-公开
标题翻译：材料选择性沉积到表面和基材上的方法和装置
公开(公告)号：WO2006105466A2
公开(公告)日：2006-10-05
申请号：PCT/US2006/012151
申请日：2006-03-30
申请人： BATTELLE MEMORIAL INSTITUTE , YONKER, Clement, R. , MATSON, Dean, W. , GASPAR, Daniel, J. , DEVERMAN, George, S.
发明人： YONKER, Clement, R. , MATSON, Dean, W. , GASPAR, Daniel, J. , DEVERMAN, George, S.
CPC分类号： C23C18/02 , C23C18/08 , H01L21/28562 , H01L21/76843 , H01L21/76879
摘要： Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemplary process, metals are deposited selectively filling feature patterns (e.g., vias) of substrates. The process can be further used to control deposition of materials on sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces. Materials include, but are not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing. In particular, selective deposition is envisioned to provide alternatives to, or decrease need for, such processes as Chemical Mechanical Planarization of silicon surfaces in semiconductor chip manufacturing due to selective filling and/or coating of pattern features with metals deposited from liquid, near-critical, or supercritical fluids.
摘要翻译：公开了用于将液体，近临界和/或超临界流体选择性和可控地沉积到控制沉积到表面或衬底上的材料的位置和/或厚度的衬底或表面的方法。在一个示例性工艺中，金属沉积选择性地填充衬底的特征图案（例如，通孔）。该方法可以进一步用于控制材料在复合或结构硅晶片的子表面上的沉积，例如用于在硅晶片表面上沉积阻挡膜。材料包括但不限于覆盖层材料，金属，非金属，层状材料，有机物，聚合物和半导体材料。本发明可应用于诸如半导体芯片制造的商业工艺中。特别地，选择性沉积被设想为提供替代或减少对半导体芯片制造中的硅表面的化学机械平面化的过程的选择或减少，这是由于选择性地填充和/或涂覆具有从液体附近的金属附近的金属的图案特征，或超临界流体。

2. 发明申请

WO2006105466A3 METHOD AND APPARATUS FOR SELECTIVE DEPOSITION OF MATERIALS TO SURFACES AND SUBSTRATES 审中-公开
标题翻译：材料选择性沉积到表面和基材上的方法和装置
公开(公告)号：WO2006105466A3
公开(公告)日：2008-01-03
申请号：PCT/US2006012151
申请日：2006-03-30
申请人： BATTELLE MEMORIAL INSTITUTE , YONKER CLEMENT R , MATSON DEAN W , GASPAR DANIEL J , DEVERMAN GEORGE S
发明人： YONKER CLEMENT R , MATSON DEAN W , GASPAR DANIEL J , DEVERMAN GEORGE S
IPC分类号： C23C18/00 , B05D1/02 , B05D7/24 , C23C18/02 , C23C18/08 , H01L21/288
CPC分类号： C23C18/02 , C23C18/08 , H01L21/28562 , H01L21/76843 , H01L21/76879
摘要： Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemplary process, metals are deposited selectively filling feature patterns (e.g., vias) of substrates. The process can be further used to control deposition of materials on sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces. Materials include, but are not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing. In particular, selective deposition is envisioned to provide alternatives to, or decrease need for, such processes as Chemical Mechanical Planarization of silicon surfaces in semiconductor chip manufacturing due to selective filling and/or coating of pattern features with metals deposited from liquid, near-critical, or supercritical fluids.
摘要翻译：公开了用于将液体，近临界和/或超临界流体选择性和可控地沉积到控制沉积到表面或衬底上的材料的位置和/或厚度的衬底或表面的方法。在一个示例性工艺中，金属沉积选择性地填充衬底的特征图案（例如，通孔）。该方法可以进一步用于控制材料在复合或结构硅晶片的子表面上的沉积，例如用于在硅晶片表面上沉积阻挡膜。材料包括但不限于覆盖层材料，金属，非金属，层状材料，有机物，聚合物和半导体材料。本发明可应用于诸如半导体芯片制造的商业工艺中。特别地，选择性沉积被设想为提供替代或减少对半导体芯片制造中的硅表面的化学机械平面化的过程的选择或减少，这是由于选择性地填充和/或涂覆具有从液体附近的金属附近的金属的图案特征，或超临界流体。

3. 发明申请

WO2005081289A3 PROCESS AND APPARATUS FOR REMOVING RESIDUES FROM SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：从半导体基板去除残留物的工艺和设备
公开(公告)号：WO2005081289A3
公开(公告)日：2007-10-25
申请号：PCT/US2005005587
申请日：2005-02-15
申请人： BATTELLE MEMORIAL INSTITUTE , FULTON JOHN L , GASPAR DANIEL J , YONKER CLEMENT R , YOUNG JAMES S , SCOTT ALAN LEA , ENGELHARD MARK H
发明人： FULTON JOHN L , GASPAR DANIEL J , YONKER CLEMENT R , YOUNG JAMES S , SCOTT ALAN LEA , ENGELHARD MARK H
IPC分类号： H01L21/311 , B08B7/00 , C11D1/12 , C11D1/14 , C11D1/34 , C11D11/00 , H01L21/02 , H01L21/306 , H01L21/768
CPC分类号： H01L21/02063 , B08B7/0021 , C11D1/123 , C11D1/146 , C11D1/345 , C11D11/0047 , H01L21/02101 , H01L21/76814
摘要： The present invention generally relates to a system for cleaning substrates. More particularly, the present invention relates to process(es) for effecting chemical removal of residues from semiconductor substrates, including silicon wafers, using a system of reactive reverse micelle(s) or microemulsions in a densified carbon dioxide matrix. Various reactive chemical agents in the reactive micelle system may be used to effect cleaning and removal of etch and metal residues to levels sufficient for commercial wafer production and processing.
摘要翻译：本发明一般涉及一种用于清洁衬底的系统。更具体地，本发明涉及使用在致密化二氧化碳基质中的反应性反胶束或微乳液系统来实现化学去除包括硅晶片在内的半导体衬底的残留物的方法。可以使用反应性胶束系统中的各种反应性化学试剂来实现清洁和去除蚀刻和金属残留物，使其达到商业晶片生产和加工的水平。

4. 发明申请

WO2012141875A1 INTERNAL OPTICAL EXTRACTION LAYER FOR OLED DEVICES 审中-公开
标题翻译：用于OLED器件的内部光学提取层
公开(公告)号：WO2012141875A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/030508
申请日：2012-03-26
申请人： ARKEMA INC. , BATTELLE MEMORIAL INSTITUTE , SILVERMAN, Gary S. , KOROTKOV, Roman Y. , SMITH, Ryan C. , LIU, Jun , GASPAR, Daniel J. , PADMAPERUMA, Asanga B. , WANG, Liang , SCHWENZER, Birgit , SWENSEN, James S.
发明人： SILVERMAN, Gary S. , KOROTKOV, Roman Y. , SMITH, Ryan C. , LIU, Jun , GASPAR, Daniel J. , PADMAPERUMA, Asanga B. , WANG, Liang , SCHWENZER, Birgit , SWENSEN, James S.
IPC分类号： H01L51/50
CPC分类号： H01L51/5275 , H01L51/5268
摘要： A light-emitting device, which improves the light output of organic light emitting diodes (OLEDs), includes at least one porous metal or metalloid oxide light extraction layer positioned between the substrate and the transparent conducting material layer in the OLED. The index of refraction of the light extraction layer and the light scattering may be tuned by changing the pore size, pore density, doping the metal oxide, adding an insulating, conducting or semiconducting component, or filling the pores, for example. A method for forming the light-emitting device includes forming at least one light extraction layer comprising a porous metal or metalloid oxide on a substrate, for example, using atmospheric pressure chemical vapor deposition (APCVD), and subsequently, forming a transparent conducting material on the light extraction layer.
摘要翻译：改善有机发光二极管（OLED）的光输出的发光器件包括位于OLED中的衬底和透明导电材料层之间的至少一个多孔金属或准金属氧化物光提取层。可以通过改变孔径，孔密度，掺杂金属氧化物，添加绝缘，导电或半导体组分或填充孔，来调节光提取层的折射率和光散射。用于形成发光器件的方法包括在基底上形成至少一个包含多孔金属或准金属氧化物的光提取层，例如使用大气压化学气相沉积（APCVD），然后形成透明导电材料光提取层。

5. 发明申请

WO2007024714A3 PROCESS FOR MODIFYING DIELECTRIC MATERIALS 审中-公开
标题翻译：修改介电材料的方法
公开(公告)号：WO2007024714A3
公开(公告)日：2007-04-19
申请号：PCT/US2006032395
申请日：2006-08-18
申请人： BATTELLE MEMORIAL INSTITUTE , CARMAN APRIL J , ZEMANIAN THOMAS S , FRYXELL GLEN E , GASPAR DANIEL J
发明人： CARMAN APRIL J , ZEMANIAN THOMAS S , FRYXELL GLEN E , GASPAR DANIEL J
IPC分类号： H01L21/3105
CPC分类号： H01L21/3105 , H01L21/02101
摘要： The invention relates to a process for modifying materials including, e.g., dielectric materials associated with electronic substrates, semiconductor chips, wafers, and the like, damaged by fabrication processes such as plasma etch processing. The described method improves structural integrity as measured, e.g., by Young's Modulus, as well as hydrophobicity, as measured, e.g., by contact angles at the liquid/surface interface.
摘要翻译：本发明涉及一种用于改性材料的方法，该材料例如包括与诸如等离子体蚀刻处理之类的制造工艺损坏的电子基板，半导体芯片，晶圆等相关的电介质材料。所描述的方法改进了如通过例如杨氏模量测量的结构完整性以及例如通过液体/表面界面处的接触角测量的疏水性。

6. 发明申请

WO2007024714A2 PROCESS FOR MODIFYING DIELECTRIC MATERIALS 审中-公开
标题翻译：改性介质材料的工艺
公开(公告)号：WO2007024714A2
公开(公告)日：2007-03-01
申请号：PCT/US2006/032395
申请日：2006-08-18
申请人： BATTELLE MEMORIAL INSTITUTE , CARMAN, April, J. , ZEMANIAN, Thomas, S. , FRYXELL, Glen, E. , GASPAR, Daniel, J.
发明人： CARMAN, April, J. , ZEMANIAN, Thomas, S. , FRYXELL, Glen, E. , GASPAR, Daniel, J.
IPC分类号： H01L21/3105
CPC分类号： H01L21/3105 , H01L21/02101
摘要： The invention relates to a process for modifying materials including, e.g., dielectric materials associated with electronic substrates, semiconductor chips, wafers, and the like, damaged by fabrication processes such as plasma etch processing. The described method improves structural integrity as measured, e.g., by Young's Modulus, as well as hydrophobicity, as measured, e.g., by contact angles at the liquid/surface interface.
摘要翻译：本发明涉及一种用于改性材料的方法，包括例如与通过诸如等离子体蚀刻加工的制造工艺损坏的电子基板，半导体芯片，晶片等相关的介电材料。所描述的方法提高了例如通过杨氏模量测量的结构完整性，以及例如通过液体/表面界面处的接触角测量的疏水性。

7. 发明申请

WO2005117084A1 REACTIVE FLUID SYSTEMS FOR REMOVING DEPOSITION MATERIALS AND METHODS FOR USING SAME 审中-公开
标题翻译：用于去除沉积材料的反应性流体系统及其使用方法
公开(公告)号：WO2005117084A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/016779
申请日：2005-05-13
申请人： BATTELLE MEMORIAL INSTITUTE , LAM RESEARCH CORPORATION , YONKER, Clement, R. , FULTON, John, L. , GASPAR, Daniel, J. , HYMES, Diane, J.
发明人： YONKER, Clement, R. , FULTON, John, L. , GASPAR, Daniel, J. , HYMES, Diane, J.
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , B08B7/0021 , C23F1/34 , H01L21/02052 , H01L21/32115 , H01L21/32134
摘要： The present invention generally relates to methods for processing materials. More particularly, the present invention relates to reactive fluids and uses thereof for removing deposition materials, including, but not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing.
摘要翻译：本发明一般涉及加工材料的方法。更具体地，本发明涉及反应性流体及其用于去除沉积材料的用途，包括但不限于覆盖层材料，金属，非金属，层状材料，有机物，聚合物和半导体材料。本发明可应用于诸如半导体芯片制造的商业工艺中。

8. 发明申请

WO2005081289A2 PROCESS AND APPARATUS FOR REMOVING RESIDUES FROM SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：从半导体基板去除残留物的工艺和设备
公开(公告)号：WO2005081289A2
公开(公告)日：2005-09-01
申请号：PCT/US2005/005587
申请日：2005-02-15
申请人： BATTELLE MEMORIAL INSTITUTE , FULTON, John, L. , GASPAR, Daniel, J. , YONKER, Clement, R. , YOUNG, James, S. , SCOTT, Alan, Lea , ENGELHARD, Mark, H.
发明人： FULTON, John, L. , GASPAR, Daniel, J. , YONKER, Clement, R. , YOUNG, James, S. , SCOTT, Alan, Lea , ENGELHARD, Mark, H.
IPC分类号： H01L21/00
CPC分类号： H01L21/02063 , B08B7/0021 , C11D1/123 , C11D1/146 , C11D1/345 , C11D11/0047 , H01L21/02101 , H01L21/76814
摘要： The present invention generally relates to a system for cleaning substrates. More particularly, the present invention relates to process(es) for effecting chemical removal of residues from semiconductor substrates, including silicon wafers, using a system of reactive reverse micelle(s) or microemulsions in a densified carbon dioxide matrix. Various reactive chemical agents in the reactive micelle system may be used to effect cleaning and removal of etch and metal residues to levels sufficient for commercial wafer production and processing.
摘要翻译：本发明一般涉及一种用于清洁衬底的系统。更具体地，本发明涉及使用在致密化二氧化碳基质中的反应性反胶束或微乳液系统来实现化学去除包括硅晶片在内的半导体衬底的残留物的方法。可以使用反应性胶束系统中的各种反应性化学试剂来实现清洁和去除蚀刻和金属残留物，使其达到商业晶片生产和加工的水平。

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