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1. 发明授权

US07357984B2 Polymer-coated carbon nanotube 失效
标题翻译：聚合物涂覆的碳纳米管
公开(公告)号：US07357984B2
公开(公告)日：2008-04-15
申请号：US10515297
申请日：2003-05-13
申请人： Kazunori Otobe , Hidenobu Nakao , Hideki Hayashi , Fumiyuki Nihey
发明人： Kazunori Otobe , Hidenobu Nakao , Hideki Hayashi , Fumiyuki Nihey
IPC分类号： D01F9/12
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/168 , C01B2202/22 , C01P2004/13 , C01P2004/64 , C09C1/48 , C09C1/56 , C09C1/565 , Y10S977/734 , Y10S977/742 , Y10S977/745 , Y10S977/748 , Y10S977/753 , Y10T428/29 , Y10T428/2913 , Y10T428/292 , Y10T428/2933 , Y10T428/2973 , Y10T428/2975 , Y10T428/298
摘要： By coating the outer surface of carbon nanotubes with various polymers of different properties, such properties as insulation property, reactivity, optical visibility, solvent dispersion property and so on are given to the outer surface of the carbon nanotubes.
摘要翻译：通过用不同性质的各种聚合物涂覆碳纳米管的外表面，将碳纳米管的外表面赋予绝缘性，反应性，光学可视性，溶剂分散性等特性。

2. 发明授权

US07518247B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07518247B2
公开(公告)日：2009-04-14
申请号：US10536993
申请日：2003-12-01
申请人： Toshitsugu Sakamoto , Hisao Kawaura , Toshio Baba , Fumiyuki Nihey , Yukinori Ochiai , Hiroo Hongo
发明人： Toshitsugu Sakamoto , Hisao Kawaura , Toshio Baba , Fumiyuki Nihey , Yukinori Ochiai , Hiroo Hongo
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76838 , B82Y10/00 , H01L21/288 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.
摘要翻译：存在微观化导致布线结构的电阻增加和电子迁移阻力降低以及耐应力迁移阻力的问题。本发明提供即使当半导体器件微型化，电子迁移和应力迁移，并且具有高可靠性及其制造方法时，具有低电阻的半导体器件的布线结构。具有布线或连接插头的半导体装置及其制造方法，所述布线或连接插头由在制造半导体芯片的基板上的绝缘膜中的布线槽或通孔中的金属和碳纳米管的混合物构成，。

3. 发明申请

US20060057053A1 Polymer-coated carbon nanotube 失效
标题翻译：聚合物涂覆的碳纳米管
公开(公告)号：US20060057053A1
公开(公告)日：2006-03-16
申请号：US10515297
申请日：2003-05-13
申请人： Kazunori Otobe , Hidenobu Nakao , Hideki Hayashi , Fumiyuki Nihey
发明人： Kazunori Otobe , Hidenobu Nakao , Hideki Hayashi , Fumiyuki Nihey
IPC分类号： D01F9/12
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/168 , C01B2202/22 , C01P2004/13 , C01P2004/64 , C09C1/48 , C09C1/56 , C09C1/565 , Y10S977/734 , Y10S977/742 , Y10S977/745 , Y10S977/748 , Y10S977/753 , Y10T428/29 , Y10T428/2913 , Y10T428/292 , Y10T428/2933 , Y10T428/2973 , Y10T428/2975 , Y10T428/298
摘要： By coating the outer surface of carbon nanotubes with various polymers of different properties, such properties as insulation property, reactivity, optical visibility, solvent dispersion property and so on are given to the outer surface of the carbon nanotubes.
摘要翻译：通过用不同性质的各种聚合物涂覆碳纳米管的外表面，将碳纳米管的外表面赋予绝缘性，反应性，光学可视性，溶剂分散性等特性。

4. 发明申请

US20050079120A1 Process for production of nano-graphite structure 审中-公开
标题翻译：纳米石墨结构生产工艺
公开(公告)号：US20050079120A1
公开(公告)日：2005-04-14
申请号：US10503660
申请日：2003-01-31
申请人： Jun-ichi Fujita , Masahiko Ishida , Fumiyuki Nihey , Yukinori Ochiai
发明人： Jun-ichi Fujita , Masahiko Ishida , Fumiyuki Nihey , Yukinori Ochiai
IPC分类号： C01B31/02 , C01B31/04
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/15 , C01P2004/16
摘要： The present invention provides a process for producing a nano-graphite structure having a desired two-dimensional or three-dimensional shape, which process possesses enough potential for ultra-fine processing to allow free selection of the size, shape, and position for the construction therefor; typically a process in which the nano-graphite structure 4 is produced by such a way where a nano-structure amorphous carbon structure 2 formed on a substrate 1 in advance in the shape of a desired ultra-fine steric configuration by a beam-excited reaction is equipped with catalyst metal atoms such as iron contained therein, and when subjecting the steric structure to a low-temperature heat treatment, the structure is converted into the graphite structure 3 through a catalytic thermal reaction by means of the catalyst metal atoms involved therein, while the shape of steric configuration thereof holds.
摘要翻译：本发明提供一种具有所需二维或三维形状的纳米石墨结构的制造方法，该方法具有足够的超细加工潜力，可以自由选择结构的尺寸，形状和位置为此; 通常是通过以下方式制造纳米石墨结构体4的方法：其中通过束激发反应，预先形成在所需的超细立方体形状的基板1上的纳米结构无定形碳结构2 配有催化剂金属原子如铁中所含的铁，并且当对空间结构进行低温热处理时，通过催化热反应借助于其中涉及的催化剂金属原子将结构转化为石墨结构3，而其立体形状的形状成立。

5. 发明申请

US20120103809A1 METHOD FOR SEPARATING NANOCARBON MATERIAL, SEPARATION DEVICE, AND SEPARATED NANOCARBON DISPERSION SOLUTION 有权
标题翻译：分离纳米材料的方法，分离装置和分离的纳米碳分散溶液
公开(公告)号：US20120103809A1
公开(公告)日：2012-05-03
申请号：US13380377
申请日：2010-06-23
申请人： Kazuki Ihara , Fumiyuki Nihey
发明人： Kazuki Ihara , Fumiyuki Nihey
IPC分类号： B01D43/00 , B82Y40/00
CPC分类号： B01D57/02 , B82Y30/00 , B82Y40/00 , C01B32/05 , C01B32/17 , C01B32/172 , C01B32/18
摘要： A method for separating a nanocarbon material includes a step in which a dispersion solution of the nanocarbon material which is dispersed into nanocarbon micelle groups having a plurality of different electric charges, and a retaining solution having a different specific gravity from the nanocarbon material, are introduced into an electrophoresis tank to form a layered state disposed in layers in a predetermined direction; and a step separating the nanocarbon micelle groups into at least two nanocarbon micelle groups by means of applying direct current voltage in series across the dispersion solution and the retaining solution which had both been introduced and disposed in layers.
摘要翻译：分离纳米碳材料的方法包括将分散在具有多个不同电荷的纳米碳胶束基中的纳米碳材料的分散溶液和与纳米碳材料的比重不同的保留溶液引入的步骤进入电泳槽以形成沿预定方向分层设置的层状态; 以及将纳米碳胶束基团分成至少两个纳米碳胶束基团的步骤，通过串联施加直流电压跨越分散溶液和已经被引入和分层的保留溶液。

6. 发明申请

US20060091557A1 Semiconductor device and its manufacturing method 有权
公开(公告)号：US20060091557A1
公开(公告)日：2006-05-04
申请号：US10536993
申请日：2003-12-01
申请人： Toshitsugu Sakamoto , Hisao Kawaura , Toshio Baba , Fumiyuki Nihey , Yukinori Ochiai , Hiroo Hongo
发明人： Toshitsugu Sakamoto , Hisao Kawaura , Toshio Baba , Fumiyuki Nihey , Yukinori Ochiai , Hiroo Hongo
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76838 , B82Y10/00 , H01L21/288 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： There has been a problem that micromiaturization causes increase of the resistance of wiring structure and degradation of electron migration resistance and stress migration resistance. The present invention provides a wiring structure of a semiconductor device having a low resistance even when the semiconductor device is microminiaturized, free of electron migration and stress migration, and having a high reliability and a method for manufacturing the same. A semiconductor device having a wiring or a connection plug made of a mixture of a metal and carbon nanotubes berried in a wiring groove or a via hole made in an insulating film on a substrate where a semiconductor chip is fabricated, and its manufacturing method are provided.

7. 发明授权

US08961762B2 Method for separating nanocarbon material, separation device, and separated nanocarbon dispersion solution 有权
标题翻译：分离纳米碳材料，分离装置和分离的纳米碳分散液的方法
公开(公告)号：US08961762B2
公开(公告)日：2015-02-24
申请号：US13380377
申请日：2010-06-23
申请人： Kazuki Ihara , Fumiyuki Nihey
发明人： Kazuki Ihara , Fumiyuki Nihey
IPC分类号： G01N27/447 , G01N27/453 , B01D57/02 , B82Y30/00 , B82Y40/00 , C01B31/02
CPC分类号： B01D57/02 , B82Y30/00 , B82Y40/00 , C01B32/05 , C01B32/17 , C01B32/172 , C01B32/18
摘要： A method for separating a nanocarbon material includes a step in which a dispersion solution of the nanocarbon material which is dispersed into nanocarbon micelle groups having a plurality of different electric charges, and a retaining solution having a different specific gravity from the nanocarbon material, are introduced into an electrophoresis tank to form a layered state disposed in layers in a predetermined direction; and a step separating the nanocarbon micelle groups into at least two nanocarbon micelle groups by means of applying direct current voltage in series across the dispersion solution and the retaining solution which had both been introduced and disposed in layers.
摘要翻译：分离纳米碳材料的方法包括将分散在具有多个不同电荷的纳米碳胶束基中的纳米碳材料的分散溶液和与纳米碳材料的比重不同的保留溶液引入的步骤进入电泳槽以形成沿预定方向分层设置的层状态; 以及将纳米碳胶束基团分成至少两个纳米碳胶束基团的步骤，通过串联施加直流电压跨越分散溶液和已经被引入和分层的保留溶液。

8. 发明申请

US20090181535A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090181535A1
公开(公告)日：2009-07-16
申请号：US12406487
申请日：2009-03-18
申请人： Toshitsugu SAKAMOTO , Hisao Kawaura , Toshio Baba , Fumiyuki Nihey , Yukinori Ochiai , Hiroo Hongo
发明人： Toshitsugu SAKAMOTO , Hisao Kawaura , Toshio Baba , Fumiyuki Nihey , Yukinori Ochiai , Hiroo Hongo
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , B82Y10/00 , H01L21/288 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： Scale down design has posed problems in an increase in the resistance value of an interconnection structure and a decrease in the resistance to electromigration and stress migration. The present invention provides an interconnection structure of a high-reliability semiconductor device which has a low resistance value even in the case of scale down design and does not produce electromigration or stress migration, and a method of manufacturing the interconnection structure. Provided are a semiconductor device which has an interconnection or a connection plug, both of which are fabricated from a mixture of a metal and carbon nanotubes, in an interconnection trench or a via hole, both of which are formed on an insulating film on a substrate on which a semiconductor device element is formed, and a method of manufacturing this semiconductor device.
摘要翻译：缩小设计在互连结构的电阻值的增加和电迁移和应力迁移的阻力降低方面存在问题。本发明提供即使在缩小设计的情况下也具有低电阻值并且不产生电迁移或应力迁移的高可靠性半导体器件的互连结构，以及制造互连结构的方法。提供一种半导体器件，其具有互连或连接插头，它们都由互连沟槽或通孔中的金属和碳纳米管的混合物制成，它们都形成在衬底上的绝缘膜上其上形成有半导体器件元件，以及制造该半导体器件的方法。

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