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1. 发明申请

US20090134119A1 FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN 有权
标题翻译：成膜材料和形成图案的方法
公开(公告)号：US20090134119A1
公开(公告)日：2009-05-28
申请号：US11997300
申请日：2006-08-24
申请人： Shogo Matsumaru , Hideo Hada , Fujikawa Shigenori , Toyoki Kunitake
发明人： Shogo Matsumaru , Hideo Hada , Fujikawa Shigenori , Toyoki Kunitake
IPC分类号： C23F1/02
CPC分类号： H01L21/0273 , C09D183/04 , G03F7/0755 , G03F7/40 , H01L21/31138 , H01L21/31144
摘要： A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155° C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask.
摘要翻译：能够在低温下形成相对于有机膜具有高耐蚀刻性和高蚀刻选择比的膜的成膜材料以及形成使用该膜的图案的方法形成材料。成膜材料包括水解时能够产生羟基的金属化合物（W）和其中溶解有金属化合物的溶剂（S），其中溶剂（S）包括沸腾的溶剂（S1）至少155℃，不含与金属化合物（W）反应的官能团。形成图案的方法包括以下步骤：使用上述成膜材料涂覆已经形成在包括基材和有机膜的层压体的有机膜的顶部上的图案，然后进行蚀刻使用该图案作为掩模的有机膜。

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