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1. 发明申请

US20070120170A1 Vertical semiconductor device 有权
标题翻译：垂直半导体器件
公开(公告)号：US20070120170A1
公开(公告)日：2007-05-31
申请号：US11546010
申请日：2006-10-11
申请人： Franz Niedernostheide , Hans-Joachim Schulze
发明人： Franz Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/94
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/7395 , H01L29/861
摘要： A vertical semiconductor device comprises a semiconductor body, a first contact and a second contact, wherein a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of a second conductivity type are formed in the semiconductor body in a direction from the first contact to the second contact, wherein a basic doping density of the second semiconductor region is smaller than a doping density of the third semiconductor region, and wherein in the second semiconductor region a semiconductor zone of the second conductivity type is arranged in which the doping density is increased relative to the basic doping density of the second semiconductor region.
摘要翻译：一种垂直半导体器件包括半导体本体，第一触点和第二触点，其中形成第一导电类型的第一半导体区域，第二导电类型的第二半导体区域和第二导电类型的第三半导体区域所述半导体本体在从所述第一接触到所述第二接触的方向上，其中所述第二半导体区域的基本掺杂密度小于所述第三半导体区域的掺杂密度，并且其中在所述第二半导体区域中，所述第二半导体区域的半导体区域布置了导电类型，其中掺杂密度相对于第二半导体区域的基本掺杂密度增加。

2. 发明申请

US20070051972A1 Thyristor with recovery protection 有权
标题翻译：晶闸管具有恢复保护
公开(公告)号：US20070051972A1
公开(公告)日：2007-03-08
申请号：US11463188
申请日：2006-08-08
申请人： Hans-Joachim Schulze , Franz Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L31/111
CPC分类号： H01L31/1113 , H01L29/0692 , H01L29/083 , H01L29/7428
摘要： A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).
摘要翻译：主晶闸管（1）具有集成到其n掺杂发射极（25）电连接到主晶闸管控制端子（140）的驱动晶闸管（2）的恢复保护。此外，驱动晶闸管（2）的p掺杂发射极（28）电连接到主晶闸管（1）的p掺杂发射极（18）。在这种情况下，提供了用于实现恢复保护的各种可选措施。一种制造具有主晶闸管和驱动晶闸管的晶闸管系统的方法，所述驱动晶闸管（2）具有阳极短路（211），包括将粒子（230）引入所述半导体本体（200）的目标区域（225）所述驱动晶闸管（2），所述半导体本体（200）的与所述后侧（202）相对的所述目标区域（225）与所述前侧（201）之间的距离小于或等于所述半导体本体掺杂发射极（28）和前侧（201）。

3. 发明申请

US20060286753A1 Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone 有权
标题翻译：用于在半导体体中产生停止区域的方法和具有停止区域的半导体部件
公开(公告)号：US20060286753A1
公开(公告)日：2006-12-21
申请号：US11423026
申请日：2006-06-08
申请人： Reiner Barthelmess , Anton Mauder , Franz Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Anton Mauder , Franz Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L21/336
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译：一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂，半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。

4. 发明申请

US20050258455A1 Semiconductor component 有权
标题翻译：半导体元件
公开(公告)号：US20050258455A1
公开(公告)日：2005-11-24
申请号：US11050649
申请日：2005-02-02
申请人： Hans-Joachim Schulze , Franz Niedernostheide , Gerald Soelkner
发明人： Hans-Joachim Schulze , Franz Niedernostheide , Gerald Soelkner
IPC分类号： H01L29/36 , H01L29/739 , H01L29/74 , H01L29/76 , H01L29/861 , H01L29/868
CPC分类号： H01L29/868 , H01L29/36 , H01L29/861
摘要： A semiconductor component has a first and a second contact-making region, and a semiconductor volume arranged between the first and the second contact-making region. Within the semiconductor volume, it is possible to generate a current flow that runs from the first contact-making region to the second contact-making region, or vice versa. The semiconductor volume and/or the contact-making regions are configured in such a way that the local flow cross-section of a locally elevated current flow, which is caused by current splitting, is enlarged at least in partial regions of the semiconductor volume.
摘要翻译：半导体部件具有第一接触区域和第二接触区域，以及布置在第一接触区域和第二接触区域之间的半导体区域。在半导体体积内，可以产生从第一接触区域到第二接触区域的电流，反之亦然。半导体体积和/或接触区域被配置为使得由电流分裂引起的局部升高的电流的局部流动横截面至少在半导体体积的部分区域中被扩大。

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