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    • 1. 发明授权
    • Process for the production of an optical lens
    • 制造光学透镜的方法
    • US08025818B2
    • 2011-09-27
    • US12700022
    • 2010-02-04
    • Jochen AlkemperJoe HaydenJosé ZimmerFrank-Thomas LentesSteffen ReichelUlrich Peuchert
    • Jochen AlkemperJoe HaydenJosé ZimmerFrank-Thomas LentesSteffen ReichelUlrich Peuchert
    • B29D11/00
    • G02B3/00G02B5/1852G02B5/1857G02B5/1895G02B27/4211
    • The invention relates to an optical hybrid lens. According to the invention, the lens consists of a substrate (1) that consists of a ceramic having a predetermined shape and at least another material (2), which covers a surface of the substrate (1) at least in certain sections in order to form a lens surface.Use of an optical ceramic as a material enables an additional degree of freedom for adjusting the imaging properties of the hybrid lens. The optical ceramic may have a high refractive index and a low dispersion. The other material can be a material that can be deformed or recast at temperatures that are low in comparison to those of the optical ceramic. In particular the other material can be a low-TG glass or a polymer. The other material is directly applied onto the substrate without a further surface finishing being necessarily required.Other aspects of the invention relate to an optical lens group, an optical image acquisition device, and a process for manufacturing a hybrid lens.
    • 本发明涉及一种光学混合透镜。 根据本发明,透镜包括由具有预定形状的陶瓷和至少另一材料(2)组成的基底(1),其至少在某些部分覆盖基底(1)的表面,以至 形成透镜表面。 使用光学陶瓷作为材料能够提供用于调整混合透镜的成像特性的附加自由度。 光学陶瓷可以具有高折射率和低色散。 另一种材料可以是在与光学陶瓷的温度相比较低的温度下可以变形或重铸的材料。 特别地,其它材料可以是低TG玻璃或聚合物。 另一种材料直接施加到基材上,而不需要进一步的表面处理。 本发明的其他方面涉及一种光学透镜组,光学图像采集装置和用于制造混合透镜的工艺。
    • 7. 发明申请
    • Method for producing a monocrystalline or polycrystalline semiconductore material
    • 用于制造单晶或多晶半导体材料的方法
    • US20090158993A1
    • 2009-06-25
    • US12334646
    • 2008-12-15
    • Uwe SahrMatthias MuellerIngo SchwirtlichFrank-Thomas LentesFrank Buellesfeld
    • Uwe SahrMatthias MuellerIngo SchwirtlichFrank-Thomas LentesFrank Buellesfeld
    • C30B11/06
    • C30B11/003C30B11/04C30B29/06Y10T117/10
    • The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method.In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible.In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.
    • 本发明涉及通过定向凝固制造单晶或多晶半导体材料的方法,其中将块状半导体原料引入熔融坩埚中并在其中熔融并定向凝固,特别是使用垂直梯度冷冻法。 为了防止污染和损坏,半导体原料从熔融坩埚的上端熔化。 熔融材料向下流动,使得尚未熔化的半导体原料在熔融坩埚中逐渐下降。 在这种情况下,附加的半导体原料从熔化坩埚从上方补充到尚未熔化或不完全熔化的半导体原料区域上,以至少部分地补偿半导体原料的体积收缩 材料并增加坩埚的填充水平。 为了尽可能少地减少熔化时间并影响系统中的热条件,通过有目的地将热量引导到低于半导体原料的熔​​融温度的温度来加热待补充的半导体原料 并以加热状态引入容器。