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1. 发明申请

US20120192398A1 Process Gas Conduits Having Increased Usage Lifetime and Related Methods 审中-公开
标题翻译：增加使用寿命和相关方法的过程气体管道
公开(公告)号：US20120192398A1
公开(公告)日：2012-08-02
申请号：US13197846
申请日：2011-08-04
申请人： Francis Vo
发明人： Francis Vo
IPC分类号： B23P11/00 , B29C65/00 , B32B18/00
CPC分类号： H01J37/3244 , H01J37/32908 , H01L21/67017 , Y10T29/49826
摘要： The invention described here relates to a gas injector for use in a semiconductor etching process or other processes involving aggressive gases or gas plasmas, and more particularly to a gas injector and gas conduits having extended usage life, and exhibiting less etching and particle generation with usage.In most semiconductor manufacturing processes for the etching of a semiconductor wafer, the uppermost portion of a wafer is selectively removed through holes formed in a photoresist layer in the processes' etching step. The etching process is carried out in a sealed chamber into which gases or gas plasmas such as, for example, CF4, CHF3, O2, NF3, He, and argon gas are injected. Commonly, a gas supplying device and a gas injector are required to provide the gas(es) to the reaction chambers and to exhaust the gas(es) from the chamber once the process is completed. In addition to being exposed to the gases, these components may be exposed to the plasma etch process. Conventional gas supplying components are made of quartz. However, after repeated use (repeated injection/passage of process gases to chamber) the component parts through which the gas is passed (such as the gas injector tube) may become etched, thereby reducing their structural integrity, and, more significantly, generating particulates that can affect the integrity of the wafer etching process. Either outcome may result in costly defects in the wafers and/or inefficiency of the process. To avoid these and other problems, conventional quartz gas injector tubes are typically replaced frequently (or, typically have a PM lifetime of about 500 Radio Frequency (“RF”) Hrs).
摘要翻译：本文描述的本发明涉及一种用于半导体蚀刻工艺或涉及侵蚀性气体或气体等离子体的其它方法的气体注射器，更具体地涉及具有延长的使用寿命的气体注入器和气体管道，并且具有较少的使用蚀刻和颗粒产生。在用于蚀刻半导体晶片的大多数半导体制造工艺中，在工艺的蚀刻步骤中，通过在光致抗蚀剂层中形成的孔选择性地去除晶片的最上部分。蚀刻工艺在密封室中进行，其中注入气体或气体等离子体，例如CF 4，CHF 3，O 2，NF 3，He和氩气。通常，一旦气体提供装置和气体喷射器一旦完成，需要将气体提供给反应室并从腔室中排出气体。除了暴露于气体之外，这些组分可能暴露于等离子体蚀刻工艺。传统的供气部件由石英制成。然而，在反复使用（反复注入/通过处理气体到室之后）中，气体通过的组分部分（例如气体注入管）可能被蚀刻，从而降低其结构完整性，并且更显着地产生颗粒这可能影响晶片蚀刻工艺的完整性。任一结果都可能导致晶圆的成本高昂的缺陷和/或处理效率低下。为了避免这些和其他问题，传统的石英气体注入管通常被频繁地替换（或通常具有大约500个射频（“RF”）小时的PM寿命）。

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