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    • 1. 发明授权
    • Non-volatile semiconductor memory and method for writing data into a non-volatile semiconductor memory
    • 非易失性半导体存储器和用于将数据写入非易失性半导体存储器的方法
    • US07187589B2
    • 2007-03-06
    • US11127022
    • 2005-05-11
    • Luca de AmbroggiFrancesco Maria Brani
    • Luca de AmbroggiFrancesco Maria Brani
    • G11C16/04
    • G11C16/10G11C16/0475G11C16/0491
    • Data is written into a non-volatile semiconductor memory using one of at least four steps. A first step is executed if the final states of both the first bit (B1) and the second bit (B2) coincide with their respective initial states and includes maintaining the initial states of the first bit (B1) and the second bit (B2). A second step is executed if both the first bit (B1) and the second bit (B2) have erased final states and the initial states of both the first bit (B1) and the second bit (B2) were not erased and includes erasing both the first bit (B1) and the second bit (B2). A third step is executed if neither the first bit (B1) nor the second bit (B2) is to be changed from a programmed initial state to an erased final state and includes programming the first bit (B1) if the first bit (B1) is to be changed from an erased initial state to a programmed final state, and/or programming the second bit (B2) if the second bit (B2) is to be changed from an erased initial state to a programmed final state. A fourth step is executed if only one of the first bit (B1) and the second bit (B2) is to be changed from a programmed initial state to an erased final state and includes first erasing both the first bit (B1) and the second bit (B2) and then programming the first bit (B1) if the first bit (B1) is programmed in the final state or programming the second bit (B2) if the second bit (B2) is programmed in the final state.
    • 使用至少四个步骤之一将数据写入非易失性半导体存储器。 如果第一比特(B 1)和第二比特(B 2)的最终状态与它们各自的初始状态一致,则执行第一步骤,并且包括维持第一比特(B 1)的初始状态和第二比特 (B 2)。 如果第一位(B 1)和第二位(B 2)都已经擦除最终状态并且第一位(B 1)和第二位(B 2)的初始状态都没有被擦除,则执行第二步 并且包括擦除第一位(B 1)和第二位(B 2)。 如果第一位(B 1)和第二位(B 2)都不能从编程的初始状态改变为擦除的最终状态,则执行第三步,并且如果第一位(B 1)和第二位 (B 1)将从擦除的初始状态改变为编程的最终状态,和/或如果将第二位(B 2)从擦除的初始状态改变为编程的,则对第二位(B 2)进行编程 最终状态。 如果仅将第一位(B 1)和第二位(B 2)中的一个从编程的初始状态改变为擦除的最终状态,则执行第四步,并且包括首先擦除第一位(B 1) 和第二位(B 2),然后如果第一位(B 1)被编程在最终状态,则编程第一位(B 1),或者如果第二位(B 2)是 编程在最终状态。