会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Determining leakage in matrix-structured electronic devices
    • 确定矩阵结构的电子设备中的泄漏
    • US07710365B2
    • 2010-05-04
    • US11645971
    • 2006-12-26
    • Franky SoFlorian PschenitzkaEgbert Hoefling
    • Franky SoFlorian PschenitzkaEgbert Hoefling
    • G09G3/30
    • G09G3/3216G01R31/3008G09G3/006
    • One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.
    • 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流,所以通过识别具有相对高的漏电流的元件,可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作:选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压,或者一次依次测量一条线或同时测量所有线。
    • 6. 发明申请
    • Determining leakage in matrix-structured electronic devices
    • 确定矩阵结构的电子设备中的泄漏
    • US20050258859A1
    • 2005-11-24
    • US10952601
    • 2004-09-28
    • Franky SoFlorian PschenitzkaEgbert Hoefling
    • Franky SoFlorian PschenitzkaEgbert Hoefling
    • G01R31/00G01R31/30G09G3/00G09G3/32
    • G09G3/3216G01R31/3008G09G3/006
    • One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.
    • 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流,所以通过识别具有相对高的漏电流的元件,可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作:选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压,或者一次依次测量一条线或同时测量所有线。