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    • 5. 发明授权
    • CMOS-compatible metal-semiconductor-metal photodetector
    • CMOS兼容金属 - 半导体 - 金属光电探测器
    • US06756651B2
    • 2004-06-29
    • US09963194
    • 2001-09-26
    • Ferenc M. BozsoFenton Read McFeelyJohn Jacob Yurkas
    • Ferenc M. BozsoFenton Read McFeelyJohn Jacob Yurkas
    • H01L2714
    • H01L31/1085H01L31/1133
    • A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The novel photo detector comprises a silicon or other semiconductor substrate material characterized by an electron energy bandgap, and a pair of metal electrodes disposed upon a surface of the silicon to define therebetween a border area of the surface. One of the two electrodes being exposed to the incident radiation and covering an area of said surface which is larger than the aforesaid border area, the aforesaid metal of the electrodes being characterized by a Fermi level which is within said electron energy bandgap.
    • 公开了一种新颖的光电检测器CMOS兼容光电检测器,其中在电极的金属中进行载流子(电子)的光生成,而不是沉积金属电极的半导体中的电子 - 空穴对。 新型光电检测器包括以电子能带隙为特征的硅或其它半导体衬底材料,以及设置在硅表面上的一对金属电极,以在其间界定表面的边界区域。 两个电极中的一个暴露于入射辐射并且覆盖所述表面的大于上述边界区域的区域,上述电极的金属的特征在于在所述电子能带隙内的费米能级。