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1. 发明申请

US20110269019A1 A METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES 有权
标题翻译：制备由硅或基于硅的材料组成的结构化颗粒的方法及其在锂可充电电池中的使用方法
公开(公告)号：US20110269019A1
公开(公告)日：2011-11-03
申请号：US13123356
申请日：2009-10-02
申请人： Mino Green , Feng-Ming Liu
发明人： Mino Green , Feng-Ming Liu
IPC分类号： H01M4/134 , C23F1/24 , C23F1/00
CPC分类号： H01M4/134 , H01M4/049 , H01M4/131 , H01M4/362 , H01M4/661 , H01M10/052 , H01M2004/028 , Y02E60/122
摘要： A process for etching silicon to form silicon pillars on the etched surfaces, includes treating silicon with an etching solution that includes 5 to 10M HF 0.01 to 0.1M Ag+ ions and 0.02 to 0.2M NO3− ions. Further, NO3− ions in the form of alkali metal, nitric acid or ammonium nitrate salt is added to maintain the concentration of nitrate ions within the above range. The etched silicon is separated from the solution. The process provides pillars, especially for use as the active anode material in lithium ion batteries. The process is advantageous because it uses an etching bath containing only a small number of ingredients whose concentration needs to be controlled and it can be less expensive to operate than previous processes.
摘要翻译：用于在蚀刻表面上蚀刻硅以形成硅柱的方法包括用蚀刻溶液处理硅，所述蚀刻溶液包括5至10M HF 0.01至0.1M Ag +离子和0.02至0.2M NO 3 - 离子。此外，加入碱金属，硝酸或硝酸铵盐形式的NO 3 - 离子以将硝酸根离子的浓度维持在上述范围内。蚀刻的硅与溶液分离。该方法提供了支柱，特别用作锂离子电池中的活性阳极材料。该方法是有利的，因为它使用仅含有少量成分的蚀刻液，其浓度需要被控制，并且可以比以前的方法操作更便宜。

2. 发明申请

US20110250498A1 METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL 有权
标题翻译：制备由硅或基于硅的材料组成的结构化颗粒的方法
公开(公告)号：US20110250498A1
公开(公告)日：2011-10-13
申请号：US13123363
申请日：2009-10-02
申请人： Mino Green , Feng-Ming Liu
发明人： Mino Green , Feng-Ming Liu
IPC分类号： H01M4/134
CPC分类号： H01M4/134 , C09K13/08 , H01M4/049 , H01M10/052 , Y02E60/122
摘要： A process of etching silicon includes treating silicon, e.g. granules or bulk material, with an etching solution, including HF, Ag+ ions and nitrate ions thereby etching the silicon to form silicon having etched pillars on its surface, which silicon includes a surface deposit of silver. The etched silicon is then separated from the spent etching solution. The silver from the etched silicon is dissolved using nitric acid to form a solution containing Ag+ ions and nitrate ions. The solution containing Ag+ ions and nitrate ions is mixed with further HF to form a further etching solution. The further etching solution is used to treat further silicon. The pillars may be used as an anode material in a Li-ion battery.
摘要翻译：蚀刻硅的工艺包括处理硅，例如硅。颗粒或本体材料，具有包括HF，Ag +离子和硝酸根离子的蚀刻溶液，由此蚀刻硅以在其表面上形成具有蚀刻柱的硅，该硅包括银的表面沉积物。然后将蚀刻的硅与废蚀刻溶液分离。使用硝酸溶解来自蚀刻硅的银，形成含有Ag +离子和硝酸根离子的溶液。将含有Ag +离子和硝酸根离子的溶液与另外的HF混合以形成另外的蚀刻溶液。进一步的蚀刻溶液用于处理另外的硅。柱可用作锂离子电池中的阳极材料。

3. 发明授权

US07646227B2 Digital phase discriminator 有权
标题翻译：数字鉴相器
公开(公告)号：US07646227B2
公开(公告)日：2010-01-12
申请号：US11781077
申请日：2007-07-20
申请人： Feng-Ming Liu
发明人： Feng-Ming Liu
IPC分类号： H03L7/06
CPC分类号： H03L7/087 , H03L7/085 , H03L7/107 , H03L7/18
摘要： A phase discriminator for being used in a phase-locked loop to determine if a phase difference between a reference signal and a target signal has reached a programmable gap value is disclose which comprises a programmable phase gap selector receiving the reference signal, a first phase digital converter converting an output signal from the programmable phase gap selector to a first digital code, a second phase digital converter converting a phase difference between the target signal and the reference signal to a second digital code, and a code comparator comparing the first and second digital code and generating a first instructional signal based on a change of order of the values of the first and second digital code.
摘要翻译：一种鉴相器，用于在锁相环中使用以确定参考信号和目标信号之间的相位差是否达到可编程间隙值，其包括接收参考信号的可编程相位选择器，第一相位数字将来自所述可编程相位选择器的输出信号转换为第一数字码;将所述目标信号与所述参考信号之间的相位差转换为第二数字码的第二相位数字转换器，以及比较所述第一和第二数字码的代码比较器代码，并且基于第一和第二数字代码的值的顺序的改变来生成第一指令信号。

4. 发明申请

US20150188122A1 METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES 有权
标题翻译：制造由硅或基于硅的材料组成的结构化颗粒的方法及其在锂可充电电池中的使用方法
公开(公告)号：US20150188122A1
公开(公告)日：2015-07-02
申请号：US14593674
申请日：2015-01-09
申请人： Mino Green , Feng-Ming Liu
发明人： Mino Green , Feng-Ming Liu
IPC分类号： H01M4/134 , H01M4/38
CPC分类号： H01M4/134 , H01M4/0492 , H01M4/1395 , H01M4/386 , H01M10/52 , H01M2004/027 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , Y10T117/102 , Y10T428/2982
摘要： Pillared particles of silicon or silicon-comprising material and a method of fabricating the same are disclosed. These particles may be used to create both a composite anode structure with a polymer binder, a conductive additive and a metal foil current collector, and an electrode structure. The structure of the particles overcomes the problems of charge/discharge capacity loss.
摘要翻译：披露了硅或含硅材料的柱状颗粒及其制造方法。这些颗粒可用于产生具有聚合物粘合剂，导电添加剂和金属箔集电器的复合阳极结构和电极结构。颗粒的结构克服了充放电容量损失的问题。

5. 发明授权

US08597831B2 Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries 有权
标题翻译：制造由硅或硅基材料构成的光纤的方法及其在锂可充电电池中的应用
公开(公告)号：US08597831B2
公开(公告)日：2013-12-03
申请号：US13286740
申请日：2011-11-01
申请人： Mino Green , Feng-Ming Liu
发明人： Mino Green , Feng-Ming Liu
IPC分类号： H01M4/38
CPC分类号： H01M4/386 , C30B29/06 , C30B29/60 , C30B33/08 , H01M4/0402 , H01M4/131 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M4/5825 , H01M4/587 , H01M10/0525 , H01M2004/027 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , Y10T29/49115
摘要： An electrically interconnected mass includes elongated structures. The elongated structures are electrochemically active and at least some of the elongated structures cross over each other to provide intersections and a porous structure. The elongated structures include doped silicon.
摘要翻译：电连接的质量包括细长结构。细长结构是电化学活性的，至少一些细长结构彼此交叉以提供交叉点和多孔结构。细长结构包括掺杂硅。

6. 发明申请

US20130122717A1 METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES 有权
标题翻译：制备由硅或硅基材料组成的结构化颗粒的方法及其在锂可充电电池中的使用方法
公开(公告)号：US20130122717A1
公开(公告)日：2013-05-16
申请号：US13639395
申请日：2011-04-08
申请人： Mino Green , Feng-Ming Liu , Yuxiong Jiang , Valerie Elizabeth Dawn Stevens , Benjamin Odarkwei Mills-Lamptey
发明人： Mino Green , Feng-Ming Liu , Yuxiong Jiang , Valerie Elizabeth Dawn Stevens , Benjamin Odarkwei Mills-Lamptey
IPC分类号： C23F1/16 , H01L21/306
CPC分类号： C23F1/16 , C09K13/08 , H01L21/30604 , H01M4/0492 , H01M4/38
摘要： A method for treating silicon to form pillars, especially for use as the active anode material in Li-ion batteries, is disclosed. The process is simple to operate on a commercial scale since it uses a solution containing only a small number of ingredients whose concentration needs to be controlled and it can be cheaper to operate than previous processes. The solution includes: 0.01 to 5M HF 0.002 to 0.2M of metal ions capable of nucleating on and forming a porous layer comprising regions of elemental metal on the silicon surface; 0.001 to 0.7M of an oxidant selected from the group O2, O3, H2O2, the acid, ammonium or alkali metal salt of NO3−, S2O82−, NO2−, B4O72− and ClO4− or a mixture thereof. The treated silicon is suitably removed from the solution.
摘要翻译：公开了一种用于处理硅以形成柱的方法，特别是用作锂离子电池中的活性阳极材料。该方法在商业规模上操作简单，因为它使用仅含少量成分的溶液，其浓度需要被控制，并且可以比以前的方法操作更便宜。该溶液包括：0.01至5M HF 0.002至0.2M的能够在硅表面上成核并形成多孔层的金属离子，其包含元素金属区域; 0.001至0.7M的选自O 2，O 3，H 2 O 2，NO 3 - ，S 2-82 - ，NO 2 - ，B 4 O 72 - 和ClO 4 - 的酸，铵或碱金属盐的氧化剂或其混合物。经处理的硅适当地从溶液中除去。

7. 发明授权

US08101298B2 Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries 有权
标题翻译：制造由硅或硅基材料构成的光纤的方法及其在锂可充电电池中的应用
公开(公告)号：US08101298B2
公开(公告)日：2012-01-24
申请号：US12161126
申请日：2007-01-23
申请人： Mino Green , Feng-Ming Liu
发明人： Mino Green , Feng-Ming Liu
IPC分类号： H01M4/13 , H01M4/88
CPC分类号： H01M4/386 , C30B29/06 , C30B29/60 , C30B33/08 , H01M4/0402 , H01M4/131 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M4/5825 , H01M4/587 , H01M10/0525 , H01M2004/027 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , Y10T29/49115
摘要： A method of fabricating fibres of silicon or silicon-based material comprises the steps of etching pillars on a substrate and detaching them. A battery anode can then be created by using the fibres as the active material in a composite anode electrode.
摘要翻译：制造硅或硅基材料的纤维的方法包括在衬底上蚀刻柱并分离它们的步骤。然后可以通过在复合阳极电极中使用纤维作为活性材料来产生电池阳极。

8. 发明申请

US20090021281A1 Digital Phase Discriminator 有权
标题翻译：数字相位鉴别器
公开(公告)号：US20090021281A1
公开(公告)日：2009-01-22
申请号：US11781077
申请日：2007-07-20
申请人： Feng-Ming Liu
发明人： Feng-Ming Liu
IPC分类号： G01R29/00
CPC分类号： H03L7/087 , H03L7/085 , H03L7/107 , H03L7/18
摘要： A phase discriminator for being used in a phase-locked loop to determine if a phase difference between a reference signal and a target signal has reached a programmable gap value is disclose which comprises a programmable phase gap selector receiving the reference signal, a first phase digital converter converting an output signal from the programmable phase gap selector to a first digital code, a second phase digital converter converting a phase difference between the target signal and the reference signal to a second digital code, and a code comparator comparing the first and second digital code and generating a first instructional signal based on a change of order of the values of the first and second digital code.
摘要翻译：一种鉴相器，用于在锁相环中使用以确定参考信号和目标信号之间的相位差是否达到可编程间隙值，其包括接收参考信号的可编程相位选择器，第一相位数字将来自所述可编程相位选择器的输出信号转换为第一数字码;将所述目标信号与所述参考信号之间的相位差转换为第二数字码的第二相位数字转换器，以及比较所述第一和第二数字码的代码比较器代码，并且基于第一和第二数字代码的值的顺序的改变来生成第一指令信号。

9. 发明授权

US06906364B2 Structure of a CMOS image sensor 有权
标题翻译： CMOS图像传感器的结构
公开(公告)号：US06906364B2
公开(公告)日：2005-06-14
申请号：US09892419
申请日：2001-06-26
申请人： Chong-Yao Chen , Chen-Bin Lin , Feng-Ming Liu
发明人： Chong-Yao Chen , Chen-Bin Lin , Feng-Ming Liu
IPC分类号： H01L27/146 , H01L31/062 , H01L31/113 , H04N1/04
CPC分类号： H01L27/14643 , H01L27/14609
摘要： A structure of a CMOS image sensory device is described. A photodiode sensory region and a transistor device region are isolated from each other by an isolation layer formed in the substrate. A gate structure is located on the transistor device region, and a source/drain region is in the transistor device region beside the side of the gate structure. A doped region is in the photodiode sensory region. A self-aligned block is located on the photodiode sensory region and a protective layer is formed on the entire substrate.
摘要翻译：描述CMOS图像感测装置的结构。光电二极管感应区域和晶体管器件区域通过形成在衬底中的隔离层彼此隔离。栅极结构位于晶体管器件区域上，源极/漏极区域位于栅极结构侧面旁边的晶体管器件区域中。掺杂区域在光电二极管的感觉区域中。自对准块位于光电二极管感应区上，在整个基板上形成保护层。

10. 发明授权

US06303406B1 Method for integrating anti-reflection layer and salicide block 有权
标题翻译：防反射层和自对准硅化物块的整合方法
公开(公告)号：US06303406B1
公开(公告)日：2001-10-16
申请号：US09590722
申请日：2000-06-08
申请人： Chong-Yao Chen , Chen-Bin Lin , Feng-Ming Liu
发明人： Chong-Yao Chen , Chen-Bin Lin , Feng-Ming Liu
IPC分类号： H01L2100
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14636 , H01L29/665 , H01L31/02161
摘要： The present invention is a method for integrating an anti-reflection layer and a salicide block. The method comprises following steps: provide a substrate that is divided into at least a sensor area and a transistor area, wherein the sensor area comprises a doped region and the transistor area comprises a transistor that includes a gate, a source and a drain; forms a composite layer on the substrate, herein the composite layer at least also covers both sensor area and transistor area, and the composite layer increases refractive index of light that propagate from the doped region into the composite layer; performs an etching process and a photolithography process to remove part of the composite layer and to let top of the gate, the source and the drain are not covered by the composite layer; and performs a salicide process to let top of the gate, the source and the drain are covered by a silicate. One main characteristic of the invention is that the composite layer can be used as an anti-reflection layer of the sensor area and a salicide block of the transistor region. The composite layer is made of several basic layers and refractive index of any basic layer is different to refractive indexes of adjacent basic layers.
摘要翻译：本发明是一种用于整合抗反射层和自对准硅化物块的方法。该方法包括以下步骤：提供被分成至少传感器区域和晶体管区域的衬底，其中传感器区域包括掺杂区域，并且晶体管区域包括包括栅极，源极和漏极的晶体管; 在衬底上形成复合层，这里复合层至少还覆盖传感器面积和晶体管面积，并且复合层增加了从掺杂区域传播到复合层中的光的折射率; 进行蚀刻处理和光刻处理以去除复合层的一部分，并使栅极顶部，源极和漏极不被复合层覆盖; 并执行自对准处理以使顶部的栅极，源极和漏极被硅酸盐覆盖。本发明的一个主要特征是复合层可以用作传感器区域的防反射层和晶体管区域的自对准硅化物块。复合层由几层基本层组成，任何基层的折射率与相邻基层的折射率不同。

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