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    • 1. 发明申请
    • THREE-COLOUR SENSOR WITH A PIN OR NIP SERIES OF LAYERS
    • 用大头针或NIP层序列中有三个颜色传感器
    • WO1997038450A1
    • 1997-10-16
    • PCT/DE1997000713
    • 1997-04-07
    • FORSCHUNGSZENTRUM JÜLICH GMBHSTIEBIG, HelmutFÖLSCH, JoachimKNIPP, Dietmar
    • FORSCHUNGSZENTRUM JÜLICH GMBH
    • H01L31/105
    • H01L31/1055
    • A structure of several i-layers is limited on one side by a p-layer and on the other side by an n-layer. The structure has means that form said i-layers in such a way that at least in the boundary area between two adjacent i-layers (i , i ), seen in the light incidence direction, the bandgap Eg (I) of the first i-layer (i ) closer to the light input side is larger than the bandgap Eg (II) of the second i-layer (i ) adjacent to the first and further removed from the light input side. In addition, in the boundary area between two adjacent i-layers (i , i ), in the direction from the p-layer to the n-layer, the product mu tau (I) of the i-layer (i ) further removed from the n-layer is larger than the product mu tau (II) of the i-layer (i ) closer to the n-layer. A structure is thus obtained for forming a colour sensor which generates signals which need to be superimposed to a lesser extent for image processing. The structure is preferably designed as a pin- or nip-structure.
    • 本发明涉及一种具有多个i层中的哪一个在一侧由在另一侧的p层由n层界定的结构。 在这种情况下,用于形成所述结构,所述i层,即在光入射方向的至少效果(I I )在光入射侧的相应一个的两个相邻i层中,带隙Eg(I)的边界区域相邻越近的 ,前者i层(I )比带隙Eg更大(II)相邻的与它的,光入射侧较远的,第二i层(i )。 此外,在从对 - 从n层的i型层进一步的n层的方向是在两个相邻的i层的边界区域中的至少(I I )的产物亩的tau(I)( I )比相邻越近的i层,n型层的产品的tau亩(II)的情况下(I )。 以这种方式,用于形成彩色传感器设置结构中,所产生的信号,可能需要用于图像处理的减小叠加。 优选地,形成的结构作为一个销或nip结构。