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1. 发明授权

US06924161B2 Protective side wall passivation for VCSEL chips 失效
标题翻译： VCSEL芯片的保护侧壁钝化
公开(公告)号：US06924161B2
公开(公告)日：2005-08-02
申请号：US10427237
申请日：2003-05-01
申请人： James C. Nohava , Robert A. Morgan , Eva M. B. Strzelecka , Yue Liu
发明人： James C. Nohava , Robert A. Morgan , Eva M. B. Strzelecka , Yue Liu
IPC分类号： H01L29/06 , H01S5/183 , H01L21/00
CPC分类号： H01S5/18313 , H01S5/0202 , H01S2301/176
摘要： Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.
摘要翻译：公开了用于密封或钝化诸如垂直腔表面发射激光器（VCSEL）的芯片的边缘的方法。一种方法包括在将晶片切割成多个管芯之前，在晶片级处氧化管芯的边缘。这可以通过沿模具之间的街道蚀刻通道，然后氧化通道壁来实现。氧化优选氧化由通道壁向内暴露的距离的含铝层。包括AlAs和AlGaAs的铝轴承层可以被氧化成稳定的天然氧化物，其耐受环境的进一步氧化。氧化后，可以将晶片沿着通道切割成多个模具，每个模具在侧表面上具有保护性氧化物层。

2. 发明授权

US06674777B1 Protective side wall passivation for VCSEL chips 失效
标题翻译： VCSEL芯片的保护侧壁钝化
公开(公告)号：US06674777B1
公开(公告)日：2004-01-06
申请号：US09652555
申请日：2000-08-31
申请人： James C. Nohava , Robert A. Morgan , Eva M. B. Strzelecka , Yue Liu
发明人： James C. Nohava , Robert A. Morgan , Eva M. B. Strzelecka , Yue Liu
IPC分类号： H01S500
CPC分类号： H01S5/18313 , H01S5/0202 , H01S2301/176
摘要： Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.
摘要翻译：公开了用于密封或钝化诸如垂直腔表面发射激光器（VCSEL）的芯片的边缘的方法。一种方法包括在将晶片切割成多个管芯之前，在晶片级处氧化管芯的边缘。这可以通过沿模具之间的街道蚀刻通道，然后氧化通道壁来实现。氧化优选氧化由通道壁向内暴露的距离的含铝层。包括AlAs和AlGaAs的铝轴承层可以被氧化成稳定的天然氧化物，其耐受环境的进一步氧化。氧化后，可以将晶片沿着通道切割成多个模具，每个模具在侧表面上具有保护性氧化物层。

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