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1. 发明授权

US06284698B1 Highly activated bimetallic complexes and polymerization process 有权
标题翻译：高活性双金属络合物和聚合过程
公开(公告)号：US06284698B1
公开(公告)日：2001-09-04
申请号：US09528787
申请日：2000-03-17
申请人： Eugene Y. Chen , Shaoguang S. Feng , David D. Graf , Jasson T. Patton , David R. Wilson
发明人： Eugene Y. Chen , Shaoguang S. Feng , David D. Graf , Jasson T. Patton , David R. Wilson
IPC分类号： B01J3100
CPC分类号： C07F17/00 , C08F4/65908 , C08F4/65912 , C08F10/00 , C08F2410/03 , C08F4/6592
摘要： Catalyst compositions comprising 1) one or more bimetallic Group 3-6 or Lanthanide metal complexes corresponding to the formula: wherein: M and M′ are independently Group 3, 4, 5, 6, or Lanthanide metals; L is a divalent group (or trivalent group if bound to Q) having up to 50 nonhydrogen atoms and containing an aromatic &pgr;-system through which the group is bound to M, said L also being bound to Z; L′ is a monovalent group or a divalent group (if bound to L″ or Q), or a trivalent group (if bound to both L″ and Q) having up to 50 nonhydrogen atoms and containing an aromatic &pgr;-system through which the group is bound to M′; L″ is a monovalent group or a divalent group (if bound to L′ or Q), or a trivalent group (if bound to both L′ and Q) having up to 50 nonhydrogen atoms and containing an aromatic &pgr;-system through which the group is bound to M′, or L″ is a moiety comprising boron or a member of Group 14 of the Periodic Table of the Elements, and optionally also comprising nitrogen, phosphorus, sulfur or oxygen, said L″ having up to 20 non-hydrogen atoms; Z is a moiety comprising boron or a member of Group 14 of the Periodic Table of the Elements, and also comprising nitrogen, phosphorus, sulfur or oxygen, said Z having up to 20 non-hydrogen atoms; X, X′ and X″ are as defined in the specification; Q is a divalent anionic ligand group bound at one terminus to either Z or L and bound at the remaining terminus to either L′ or L″, said Q having up to 20 nonhydrogen atoms; and x, x′, and x″ are independently integers from 0 to 3; and 2) one or more activating cocatalysts; wherein activating cocatalyst component 2) causes both metal centers, M and M′, of the one or more bimetallic metal complexes 1) to be catalytically active for the polymerization of addition polymerizable monomers.
摘要翻译：催化剂组合物包含1）一种或多种对应于下式的双金属组3-6或镧系元素金属络合物：其中：M和M'独立地为第3,4,5,6族或镧系金属; L为二价基团（或三价基团如果结合Q）具有多达50个非氢原子并且含有基团与M结合的芳族π系统，所述L也与Z结合; L'是一价基团或二价基团（如果与 L“或Q）或三价基团（如果与L”和Q两者结合），其具有多达50个非氢原子并且含有该基团通过其与M'结合的芳族π系统; L“是一价基团或二价基团（如果与L'或Q键合）或三价基团（如果与L'和Q两者结合）具有多达50个非氢原子并含有芳族π-系统，通过该基团键合该基团 M'或L“是包含元素周期表第14族的硼或元素的部分，并且任选地也包含氮，磷所述L“具有多达20个非氢原子; Z是包含元素周期表第14族的硼或元素的部分，并且还包含氮，磷，硫或氧，所述Z具有至多20个非氢原子; X，X'和X“如说明书中所定义; Q是在一个末端与Z或L结合的二价阴离子配体基团，并在剩余的末端结合至 L'或L“，所述Q具有至多20个非氢原子; 和x，x'独立地为0至3的整数; 和2）一种或多种活化助催化剂;其中活化助催化剂组分2）使得一种或多种双金属金属络合物1）的金属中心M和M'两者对于可加聚单体的聚合具有催化活性。

2. 发明授权

US6165803A Magnetic random access memory and fabricating method thereof 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US6165803A
公开(公告)日：2000-12-26
申请号：US312833
申请日：1999-05-17
申请人： Eugene Y. Chen , Jon M. Slaughter
发明人： Eugene Y. Chen , Jon M. Slaughter
IPC分类号： G11C11/14 , G11B5/39 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/22 , H01L43/08 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/12
摘要： An improved and novel fabrication method for a magnetic element, and more particularly its use in a magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44) are defined by transforming portions (42b) of a magnetic blanket layer into an insulative material. The magnetic blanket layer, which includes magnetic layers (40,42) and a non-magnetic layer (41) sandwiched by the magnetic layers, which are deposited on conductor layer (34). The insulative, or inactive, portions (42b) define and separate the plurality of memory elements (43, 44).
摘要翻译：提供了一种用于磁性元件的改进和新颖的制造方法，更具体地，其在磁阻随机存取存储器（MRAM）中的应用。 MRAM设备具有用于管理存储器元件的存储器元件和电路。电路包括集成在基板（11）上的晶体管（12a），数字线（29）等。首先在CMOS工艺之下制造电路，然后通过将磁性覆盖层的部分（42b）转换成绝缘材料来限定磁存储元件（43,44）。磁性层包括磁性层（40,42）和被磁性层夹在中间的非磁性层（41），其沉积在导体层（34）上。绝缘或非活动部分（42b）限定和分离多个存储元件（43,44）。

3. 发明授权

US06084115A Diene complexes of group 4 metals and process of preparation 有权
标题翻译：第4族金属的二烯络合物及其制备方法
公开(公告)号：US06084115A
公开(公告)日：2000-07-04
申请号：US265641
申请日：1999-03-10
申请人： Eugene Y. Chen , Richard E. Campbell, Jr. , David D. Devore , D. Patrick Green , Jasson T. Patton , Jorge Soto , David R. Wilson
发明人： Eugene Y. Chen , Richard E. Campbell, Jr. , David D. Devore , D. Patrick Green , Jasson T. Patton , Jorge Soto , David R. Wilson
IPC分类号： C07F7/00 , C07F7/08 , C07F9/50 , C07F17/00 , C08F4/642 , C08F4/659 , C08F4/6592 , C08F10/00 , C07F9/02
CPC分类号： C07F17/00 , C07F7/00 , C07F7/082 , C07F9/5045 , Y02P20/125 , Y10S526/943
摘要： Disclosed is a process for preparing bridged Group 4 metal complexes containing a neutral diene ligand starting from the corresponding novel, metal diene containing complexes by reaction thereof with the divalent derivative of a bridged bidentate ligand compound. The novel, intermediate metal diene complexes, their formation from tetravalent metal salts and an integrated process combining both process steps are claimed.
摘要翻译：公开了一种通过与桥连二齿配位体化合物的二价衍生物反应制备含有中性二烯配体的桥连的第4族金属配合物的方法，其起始于相应的新型含金属二烯复合物。所述的新型中间体金属二烯络合物，它们由四价金属盐的形成以及组合两个工艺步骤的一体化方法。

4. 发明授权

US06904571B1 Algorithm and methodology for the polygonalization of sparse circuit schematics 失效
标题翻译：稀疏电路原理图的多边形化算法和方法
公开(公告)号：US06904571B1
公开(公告)日：2005-06-07
申请号：US10234411
申请日：2002-09-03
申请人： Dominik J. Schmidt , Perry Chun , Richard C. Saito , Eugene Y. Chen
发明人： Dominik J. Schmidt , Perry Chun , Richard C. Saito , Eugene Y. Chen
IPC分类号： G06F17/50 , H01L27/02
CPC分类号： H01L27/0207 , G06F17/5068
摘要： An method of creating a physical layout of an integrated circuit. A schematic file (600) is mapped directly to a physical layout using the location of elements and routing of interconnections as specified in the schematic file (600). The method takes advantage of constraints on the schematic design to provide the layout file (675) quickly, without complex routing programs. Design rules violations are anticipated and corrected in some cases. In other cases, the design rule violations are annotated, if the designer intentionally placed them in the design.
摘要翻译：一种创建集成电路的物理布局的方法。使用原理图文件（600）中指定的元件的位置和互连的路由将原理图文件（600）直接映射到物理布局。该方法利用原理图设计的约束，快速提供布局文件（675），而无需复杂的路由程序。在某些情况下，预计和纠正设计规则违规。在其他情况下，如果设计人员有意将其放在设计中，则会注释设计规则违规。

5. 发明授权

US06683815B1 Magnetic memory cell and method for assigning tunable writing currents 有权
标题翻译：磁存储单元和分配可调谐写入电流的方法
公开(公告)号：US06683815B1
公开(公告)日：2004-01-27
申请号：US10180695
申请日：2002-06-26
申请人： Eugene Y. Chen , Kamel A. Ounadjela , Ashish Pancholy
发明人： Eugene Y. Chen , Kamel A. Ounadjela , Ashish Pancholy
IPC分类号： G11C700
CPC分类号： G11C11/16
摘要： A circuit is provided herein, which is adapted to supply different current magnitudes along opposing directions of a conductive line. Such a circuit may be particularly beneficial in compensating for the effects of unintentional magnetic coupling within MRAM devices. In addition, a method is provided herein for configuring a device having a magnetic memory array, which receives a first current magnitude along one direction and a substantially different current magnitude along an opposite direction of the magnetic memory array. Furthermore, a method is provided herein which assigns tunable current magnitudes for write operations along conductive lines of a memory circuit. Such tunable writing currents advantageously increase the write selectivity of the memory circuit. More specifically, the tunable writing currents compensate for ferromagnetic and antiferromagnetic coupling within magnetic memory cells caused by uneven surface topology and non-zero total magnetic moments, respectively.
摘要翻译：本文提供了一种电路，其适于沿着导线的相反方向提供不同的电流幅度。这种电路在MRAM器件中的非故意磁耦合效应的补偿中可能是特别有益的。此外，本文提供了一种用于配置具有磁存储器阵列的装置的方法，该磁存储器阵列沿着磁存储器阵列的相反方向沿着一个方向和基本上不同的电流幅度接收第一电流幅度。此外，本文提供了一种根据存储器电路的导线为写入操作分配可调电流大小的方法。这种可调写入电流有利地增加了存储器电路的写选择性。更具体地说，可调谐写入电流分别补偿磁性存储器单元内由不平坦的表面拓扑和非零的总磁矩引起的铁磁和反铁磁耦合。

6. 发明授权

US06291614B1 Dinuclear fluoroaryl aluminum alkyl complexes 有权
标题翻译：双核氟芳基铝烷基配合物
公开(公告)号：US06291614B1
公开(公告)日：2001-09-18
申请号：US09371888
申请日：1999-08-09
申请人： Eugene Y. Chen , William J. Kruper, Jr.
发明人： Eugene Y. Chen , William J. Kruper, Jr.
IPC分类号： C08F442
CPC分类号： C07F5/066 , C07F5/062 , C08F4/65908 , C08F4/65916 , C08F4/6592 , C08F210/16 , Y10S526/943 , C08F4/65912 , C08F210/14 , C08F2500/12
摘要： A catalyst activator particularly adapted for use in the activation of metal complexes of metals of Group 3-10 for polymerization of ethylenically unsaturated polymerizable monomers, especially olefins, comprising: a compound corresponding to the formula: ArfzAl2Q16-z where; Q1 independently each occurrence is selected from C1-20 alkyl; Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; z is a number greater than 0 and less than 6, and the moiety: ArfzAl2Q16-z is an adduct of tri(fluoroarylaluminum) with from a sub-stoichiometric to a super-stoichiometric amount of a trialkylaluminum having from 1 to 20 carbons in each alkyl group.
摘要翻译：一种催化剂活化剂，特别适用于激活3-10金属金属络合物，用于聚合烯属不饱和可聚合单体，特别是烯烃，其包含：对应于下式的化合物：其中：Q1独立地每次出现时选自C1 -20烷基; Arf是6至30个碳原子的氟化芳族烃基部分; z是大于0且小于6的数，并且部分：ArfzAl 2 Q 16-z是三（氟化芳基铝）与亚烷基的加合物在每个烷基中化学计量量超过化学计量量的具有1至20个碳的三烷基铝。

7. 发明授权

US06683199B1 Dicationic non-metallocene group 4 metal complexes 失效
标题翻译：双极性非茂金属组4金属络合物
公开(公告)号：US06683199B1
公开(公告)日：2004-01-27
申请号：US10088279
申请日：2002-03-15
申请人： Eugene Y. Chen , William J. Kruper, Jr.
发明人： Eugene Y. Chen , William J. Kruper, Jr.
IPC分类号： C07F728
CPC分类号： C07F7/28
摘要： Dicationic or partially dicationic Group 4 metal compounds having utility has addition polymerization catalysts among other uses and a method of preparation.
摘要翻译：具有适用的第4族金属化合物具有其它用途的加成聚合催化剂及其制备方法。

8. 发明授权

US06214760B1 Catalyst activator composition 有权
标题翻译：催化剂活化剂组成
公开(公告)号：US06214760B1
公开(公告)日：2001-04-10
申请号：US09330673
申请日：1999-06-11
申请人： Eugene Y. Chen , William J. Kruper, Jr. , Gordon R. Roof
发明人： Eugene Y. Chen , William J. Kruper, Jr. , Gordon R. Roof
IPC分类号： C07F1700
CPC分类号： C08F10/00 , C07F5/068 , C08F4/65908 , C08F4/6592 , C08F4/65927 , C08F110/06 , C08F210/16 , Y10S526/943 , C08F4/65912 , C08F210/14 , C08F2500/08 , C08F2500/12
摘要： A composition comprising a mixture of aluminum containing Lewis acids said mixture corresponding to the formula: (Arf3Al)(AlQ13)y(—AlQ2—O—)z where; Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; Q1 is C1-20 alkyl; Q2 is C1-20 hydrocarbyl, optionally substituted with one or more groups which independently each occurrence are hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydrocarbyl)amino, di(hydrocarbyl)phosphino, or hydrocarbylsulfido groups having from 1 to 20 atoms other than hydrogen, or, optionally, two or more Q2 groups may be covalently linked with each other to form one or more fused rings or ring systems; y is a number from 0 to 1.0; z is a number from 0.1 to 20; and the moieties (Arf3Al)(AlQ13)y may exist as discrete entities or dynamic exchange products.
摘要翻译：一种组合物，其包含含有路易斯酸的铝的混合物，所述混合物对应于下式：其中; Arf为6至30个碳原子的氟化芳族烃基部分; Q 1为C 1-20烷基; Q 2为C 1-20烃基，任选取代具有一个或多个独立地各自独立的基团是烃氧基，烃基甲硅烷氧基，烃基甲硅烷基氨基，二（烃基甲硅烷基）氨基，烃基氨基，二（烃基）氨基，二（烃基）膦基或具有除氢以外的1至20个原子的烃基硫基，或任选地，两个或更多个Q2基团可以彼此共价连接以形成一个或多个稠环或环系; y为0至1.0的数; z为0.1至20的数; 并且部分（Arf3Al）（AlQ13）y可以作为离散实体或动态交换产物存在。

9. 发明授权

US06211111B1 Activator composition comprising aluminum compound mixture 有权
标题翻译：包含铝化合物混合物的活化剂组合物
公开(公告)号：US06211111B1
公开(公告)日：2001-04-03
申请号：US09330675
申请日：1999-06-11
申请人： Eugene Y. Chen , William J. Kruper, Jr. , Gordon R. Roof , David J. Schwartz , Joey W. Storer
发明人： Eugene Y. Chen , William J. Kruper, Jr. , Gordon R. Roof , David J. Schwartz , Joey W. Storer
IPC分类号： B01J3100
CPC分类号： C07F5/066 , C07F7/10 , C07F17/00 , C08F10/00 , C08F110/06 , C08F210/16 , C08F4/61912 , C08F210/14 , C08F2500/12 , C08F4/65927 , C08F4/6592 , C08F4/65912
摘要： Compositions comprising: A) an aluminum compound corresponding to the formula AlArf3, where Arf is a fluorinated aromatic hydrocarbyl moiety of from 6 to 30 carbon atoms; B) an aluminum compound corresponding to the formula: AlArfQ1Q2, or a dimer, adduct, or mixture thereof; where: Arf is as previously defined; Q1 is Arf or a C1-20 hydrocarbyl group, optionally substituted with one or more cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl, silylhydrocarbyl, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydrocarbyl)amino, di(hydrocarbyl)phosphino, or hydrocarbylsulfido groups having from 1 to 20 atoms other than hydrogen, or, further optionally, such substituents may be covalently linked with each other to form one or more fused rings or ring systems; and Q2is an aryloxy, arylsulfide or di(hydrocarbyl)amido group, optionally substituted with one or more hydrocarbyl, cyclohydrocarbyl, hydrocarbyloxy, hydrocarbylsiloxy, hydrocarbylsilylamino, hydrocarbylsilyl, silyhydrocarbyl, di(hydrocarbylsilyl)amino, hydrocarbylamino, di(hydrocarbyl)amino, di(hydrocarbyl)phosphino, or hydrocarbylsulfido groups having from 1 to 20 atoms other than hydrogen, or, further optionally such substituents may be covalently linked with each other to form one or more fused rings or ring systems, said Q2 having from 3 to 20 atoms other than hydrogen; and the molar ratio of A):B) in the composition being from 0.1:1 to 10:1 are useful as activators for olefin polymerizations.
摘要翻译：组合物，其包含：A）对应于式AlArf 3的铝化合物，其中Arf为6至30个碳原子的氟化芳族烃基部分; B）对应于式AlArfQ1Q2的铝化合物或其二聚物，加合物或其混合物 ; 其中：Arf如前所定义; Q 1是Arf或C 1-20烃基，任选被一个或多个环烃基，烃氧基，烃基甲硅烷氧基，烃基甲硅烷基氨基，烃基甲硅烷基，甲硅烷基烃基，二（烃基甲硅烷基）氨基，烃基氨基，二（烃基）氨基，二（烃基）膦基或具有除氢以外的1至20个原子的烃基硫基，或者进一步任选地，这些取代基可彼此共价连接以形成一个或多个稠环或环系; 任选被一个或多个烃基，环烃基，烃氧基，烃基甲硅烷氧基，烃基甲硅烷基氨基，烃基甲硅烷基，巯基烃基，二（烃基甲硅烷基）氨基，烃基氨基，二（烃基）氨基，二（烃基））膦基或具有除氢以外的1至20个原子的烃基硫基，或者进一步任选地，这些取代基可以彼此共价连接以形成一个或多个稠环或环系，所述Q2具有3至20个以外的原子，除了氢; 并且组分中A）：B）的摩尔比为0.1:1至10:1可用作烯烃聚合的活化剂。

10. 发明授权

US6136993A Integrated process for preparation of diene complexes 有权
公开(公告)号：US6136993A
公开(公告)日：2000-10-24
申请号：US420625
申请日：1999-10-20
申请人： Eugene Y. Chen , Richard E. Campbell, Jr. , David D. Devore , D. Patrick Green , Jasson T. Patton , Jorge Soto , David R. Wilson
发明人： Eugene Y. Chen , Richard E. Campbell, Jr. , David D. Devore , D. Patrick Green , Jasson T. Patton , Jorge Soto , David R. Wilson
IPC分类号： C07F7/00 , C07F7/08 , C07F9/50 , C07F17/00 , C08F4/642 , C08F4/659 , C08F4/6592 , C08F10/00
CPC分类号： C07F17/00 , C07F7/00 , C07F7/082 , C07F9/5045 , Y02P20/125 , Y10S526/943
摘要： Disclosed is a process for preparing bridged Group 4 metal complexes containing a neutral diene ligand starting from the corresponding novel, metal diene containing complexes by reaction thereof with the divalent derivative of a bridged bidentate ligand compound. The novel, intermediate metal diene complexes, their formation from tetravalent metal salts and an integrated process combining both process steps are claimed.

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