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    • 8. 发明授权
    • Magnetically patterned etch mask
    • 磁图案蚀刻掩模
    • US06174449B1
    • 2001-01-16
    • US09079252
    • 1998-05-14
    • James J. AlwanEric Knappenberger
    • James J. AlwanEric Knappenberger
    • G03G1900
    • H01J9/025H01L21/0337
    • A method for forming an etch mask is described. In particular, an etch mask is formed using masking particles positionally restrained by a matrix medium. Either the masking particles or the matrix medium is more magnetically conductive with respect to the other. A magnetic field is applied for making a random distribution of the masking particles less random. Consequently, agglomeration of the masking particles is reduced. Masking particles with submicron dimensions may be used for providing features of less than a micron. The mask formed may be an etch mask employed in forming a field emitter tip for a field emission display.
    • 描述了形成蚀刻掩模的方法。 特别地,使用由基质介质位置约束的掩模颗粒形成蚀刻掩模。 掩模颗粒或基质介质相对于另一个更具有导磁性。 施加磁场以使掩蔽粒子的随机分布更少随机。 因此,掩蔽颗粒的团聚减少。 具有亚微米尺寸的掩模颗粒可用于提供小于一微米的特征。 形成的掩模可以是用于形成用于场致发射显示的场发射器尖端的蚀刻掩模。