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1. 发明专利

JP2002367961A Rf power probe head with thermally conductive bushing 有权
标题翻译：射频功率探头，带导电布线
公开(公告)号：JP2002367961A
公开(公告)日：2002-12-20
申请号：JP2002163223
申请日：2002-06-04
申请人： Eni Technologies Inc , イーエヌアイテクノロジィーズ、インコーポレイテッド
发明人： COUMOU DAVID J
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32935
摘要： PROBLEM TO BE SOLVED: To provide a probe interface bushing which can effectively dissipate the heat resulting from RF power.
SOLUTION: A probe interface for an RF probe head comprises a conductor for transmitting RF power to a plasma chamber, and a sensing board for generating an analog signal based on the RF power. An electrically insulative bushing is disposed between the conductor and the sensing board, where the bushing is thermally conductive such that the bushing dissipates the heat resulting from the RF power. By enabling the bushing to be thermally conductive, thermal instability is reduced and the overall RF power handing capacity is increased.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供可以有效地消散由RF功率产生的热量的探针接口衬套。解决方案：用于RF探头的探针接口包括用于向等离子体室发送RF功率的导体，以及用于基于RF功率产生模拟信号的感测板。电绝缘套管设置在导体和感测板之间，其中套管是导热的，使得衬套消散由RF功率产生的热量。通过使衬套能够导热，热不稳定性降低，并且总的RF功率处理能力增加。

2. 发明公开

EP0911877A1 Kilowatt power transistor 审中-公开
标题翻译： Leistungstransistorfürden Kilowattbereich
公开(公告)号：EP0911877A1
公开(公告)日：1999-04-28
申请号：EP98306326.4
申请日：1998-08-07
申请人： Eni Technologies, Inc.
发明人： Adishian, Gary C.
IPC分类号： H01L23/495
CPC分类号： H01L24/49 , H01L23/49562 , H01L24/48 , H01L2224/05554 , H01L2224/45015 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49171 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01072 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2224/45099 , H01L2924/2076
摘要： A high-power high-voltage transistor has four or more semiconductor dies (14) mounted in thermal contact on a metal flange (12). Each die (14) has a flat lower surface with a drain (collector) region formed over at least 80 percent of its lower surface. A gate (base) region and a source (emitter) region are formed respectively on upper surfaces of the did. The drain region is seated in direct electrical and thermal contact with the flange (12), so that the flange serves as a drain lead for the transistor did (14). The did has a drain-source breakdown voltage (or collector-emitter breakdown voltage) on the order of one kilovolt or higher and an area of one hundred thousand square mils or larger. Molybdenum tabs (57) between the drain (collector) region and the flange protect the did from thermally-induced stresses. The dies can be MOSFET power transistors, bipolar junction transistors or other solid-state devices. An oval lead frame (60) can be employed for connecting to the source regions. A carousel arrangement carries an array of chips (114) on a circular flange (112). The transistor can be implemented as a DC grounded drain, RF common source amplifier circuit. The gate-source input can float, allowing the drain to be DC and thermally grounded. The RF current path is conventional common source (emitter).
摘要翻译：大功率高压晶体管具有四个或更多个以金属凸缘（12）热接触的半导体管芯（14）。每个管芯（14）具有平坦的下表面，在其下表面的至少80％上形成有漏极（集电极）区域。分别形成栅极（基极）区域和源极（发射极）区域。漏极区域与法兰（12）直接电接触和热接触，从而法兰用作晶体管的漏极引线（14）。确实具有大约1千伏或更高的面积为十万平方米或更大的漏极 - 源极击穿电压（或集电极 - 发射极击穿电压）。排水（集电器）区域和法兰之间的钼片（57）可防止受热应力。模具可以是MOSFET功率晶体管，双极结型晶体管或其他固态器件。可以使用椭圆形引线框架（60）来连接到源区域。圆盘传送带装置在圆形凸缘（112）上携带芯片阵列（114）。晶体管可以实现为直流接地漏极，RF公共源放大器电路。栅源输入可以浮动，允许漏极为直流和热接地。 RF电流路径是常规的公共源（发射极）。

3. 发明公开

EP1318605A3 Half sine wave resonant drive circuit 审中-公开
标题翻译： Halbsinuswellen-Resonanztreiberschaltung
公开(公告)号：EP1318605A3
公开(公告)日：2005-07-13
申请号：EP02079792.4
申请日：2002-11-19
申请人： Eni Technologies, Inc.
发明人： Bennet, Paul George
IPC分类号： H03K17/687 , H03K17/691
CPC分类号： H03K17/687 , H03K17/04163 , H03K17/691 , H03K2217/0036
摘要： A half sine wave resonant drive circuit provides a greater duty cycle range of operation without a loss in power, particularly at higher frequencies. A resonant circuit (32) is capacitivly coupled to a single switching device (36) to provide the greater duty cycle range by recycling the gate charge of the switching device through the resonant circuit. A half sine wave drive signal is thereby produced from an input square wave signal. The driving amplitude is constant for operation over the range of duty cycles.

4. 发明公开

EP1318605A2 Half sine wave resonant drive circuit 审中-公开
标题翻译： Halbsinuswellen-Resonanztreiberschaltung
公开(公告)号：EP1318605A2
公开(公告)日：2003-06-11
申请号：EP02079792.4
申请日：2002-11-19
申请人： Eni Technologies, Inc.
发明人： Bennet, Paul George
IPC分类号： H03K17/687 , H03K17/691
CPC分类号： H03K17/687 , H03K17/04163 , H03K17/691 , H03K2217/0036
摘要： A half sine wave resonant drive circuit provides a greater duty cycle range of operation without a loss in power, particularly at higher frequencies. A resonant circuit (32) is capacitivly coupled to a single switching device (36) to provide the greater duty cycle range by recycling the gate charge of the switching device through the resonant circuit. A half sine wave drive signal is thereby produced from an input square wave signal. The driving amplitude is constant for operation over the range of duty cycles.
摘要翻译：半正弦波谐振驱动电路提供更大的占空比操作范围，而不会损耗功率，特别是在较高频率下。谐振电路（32）电容耦合到单个开关器件（36），以通过将开关器件的栅极电荷循环通过谐振电路来提供更大的占空比范围。从而由输入的方波信号产生半正弦波驱动信号。在占空比范围内运行的驱动振幅是恒定的。

5. 发明公开

EP0939428A3 Voltage-current probe with high matching directivity 有权
标题翻译：电压电流探头具有高适应性的指向
公开(公告)号：EP0939428A3
公开(公告)日：2002-10-23
申请号：EP99301185.7
申请日：1999-02-17
申请人： Eni Technologies, Inc.
发明人： Gerrish, Kevin Sean
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32082 , H01J37/32935 , H01J37/3299
摘要： A technique for measuring the current, voltage and phase of an RF power wave to an RF load (20) accounts for the finite length of the voltage and current pickups (42, 52) and corrects for effects of standing wave components of voltage and current. Voltage and current are computed as complex functions of the voltage pickup signal V v and the current pickup signal V i based on coefficients precalibrated for said predetermined radio frequency. Alternatively, a corrected current value can based on the corrected voltage value and complex load impedance. The correction coefficients can be obtained, for each of a plurality of calibrating radio frequencies within an RF range, from voltage and current pickup signals under conditions of (a) open circuit load, (b) short circuit load, (c) fixed known impedance load; and (d) one of voltage and current being applied at a precise input level to a known load from an RF calibration source. The voltage and current probe (22) can comprise a metal housing (30) having a cylindrical bore (32) therethrough, and first and second recesses (34, 36) a center conductor (A) and cylindrical insulator (B) within said bore (32) and voltage and current sensor boards (45, 55) mounted in the recesses (34, 36).

6. 发明公开

EP0935406A3 Ratiometric autotuning algorithm for RF plasma generator 审中-公开
标题翻译：算法用比测量的RF等离子体发生器自动协调
公开(公告)号：EP0935406A3
公开(公告)日：2002-05-15
申请号：EP99300877.0
申请日：1999-02-05
申请人： Eni Technologies, Inc.
发明人： Wilbur, Joseph
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H03L5/02 , H05H2001/4682
摘要： An RF plasma system employs frequency tuning to change the frequency of an RF generator (14) within a frequency range to match the impedance of a plasma chamber (18). Forward power and reflected power magnitudes are obtained from a bidirectional sensor (16). The ratio of reflected power to forward power is obtained for one frequency, and then the frequency is changed. The tuning algorithm compares the ratio of reflected to forward power at the new frequency with the ratio obtained earlier. If the new ratio is smaller, the frequency is changed again in the same direction, but if larger, then the frequency is changed in the other direction. These steps are iterated until the ratio of reflected to forward power reaches a minimum. The tuning algorithm can be implemented in hardware or in software.

7. 发明公开

EP0935124A3 Fiber optic position sensor for tuning capacitor 有权
标题翻译：光纤位置传感器
公开(公告)号：EP0935124A3
公开(公告)日：2001-09-12
申请号：EP99300860.6
申请日：1999-02-05
申请人： Eni Technologies, Inc.
发明人： Church, Richard E.
IPC分类号： G01D5/34
CPC分类号： G01D5/34
摘要： An optical position sensor for a vacuum tuning capacitor employs optic fibers (31, 32) that are positioned adjacent a nut (20) associated with the guide shaft (16). A threaded lead screw (21) is rotated to lift the nut and move the capacitor from a fully-withdrawn home position to a tuning position. A first fiber (31) has its terminus aligned with the terminus of a second fiber (32) to define a gap. A flag or shutter (37) on the nut is positioned in the gap to block the light path between the fibers when the nut is in the home position, but is out of the gap to allow passage of light otherwise. This produces normally-on signaling, giving the position sensor a fail-safe capability. The sensor can be incorporated into a cap or cover (22) of the tuning capacitor.
摘要翻译：用于真空调谐电容器的光学位置传感器使用邻近与导向轴（16）相关联的螺母（20）定位的光纤（31,32）。旋转螺纹导螺杆（21）以提升螺母并将电容器从完全撤回的原始位置移动到调谐位置。第一纤维（31）的末端与第二纤维（32）的末端对齐以限定间隙。螺母上的标志或挡板（37）位于间隙中，以在螺母处于原始位置时阻挡光纤之间的光路，但是在间隙之外以允许光否通过。这产生正常信号，给位置传感器提供故障安全功能。传感器可以结合到调谐电容器的盖或盖（22）中。

8. 发明公开

EP0911863A2 Plasma process control system comprising a programmable process controller and an external computer for downloading a control program to the process controller 审中-公开
标题翻译：具有可编程过程控制器和一个外部计算机，以在所述控制器发送的控制程序等离子体工艺控制系统
公开(公告)号：EP0911863A2
公开(公告)日：1999-04-28
申请号：EP98306325.6
申请日：1998-08-07
申请人： Eni Technologies, Inc.
发明人： Vona, Daniel F. , Gerrish, Kevin S. , Nasman, Kevin P.
IPC分类号： H01J37/32
CPC分类号： H01J37/32935 , H01J37/32963 , H01J37/3299
摘要： Plasma process control arrangement controls a plasma generator (12) that provides electrical power to a plasma chamber (18) for an RF or DC plasma process. A sensor system (16) detects operating parameters of the electrical power, including voltage and current levels. A process detection system(PDS)controller (26) has inputs coupled to the sensor system (16) to receive the operating parameters, a programmable memory unit (30) for storing a control program to compute an output control signal based on said operating parameters, and a control output coupled to a control input of the plasma generator. An external computer device (42), includes a monitor (46), an icon copying device, e.g., a mouse (50) suitable for drag-and-drop operation, and a memory storing a suitable code-building program (44) for generating a user-selected control program according to user-determined process requirements. Respective graphical icons are presented on the monitor and are selected and connected by use of the icon copying device to represent logic processing of the operational parameters, and the external computer device (42) creates the corresponding user-selected control program. The user-selected control program is downloaded from the external computer device to the programmable memory (30) of the pds controller (26), e.g., using standard connectors and cables.
摘要翻译：等离子体工艺控制装置，控制等离子体发生器（12）没有电功率提供给等离子体室（18），用于在RF或DC等离子处理。的传感器系统（16）检测的电功率，包括电压和电流水平的操作参数。的方法检测系统（PDS）控制器（26）具有用于存储控制程序，以计算基于所述工作参数输出控制信号耦合到所述传感器系统（16）以接收所述操作参数，可编程存储器单元（30）输入和控制输出端耦合到等离子体发生器的控制输入端。外部计算机装置（42）包括用于在监视器（46），图标拷贝装置，例如，鼠标（50）适于拖动和放下操作，和一个存储器，其存储一个合适的编码建设方案（44）产生用户选择的控制程序gemäß到用户确定的工艺要求。相应的图形图标被呈现在监视器上并且被选择并连接通过使用图标复印设备的代表操作参数的逻辑处理，和外部计算机装置（42）创建对应的用户选择的控制程序。用户选择的控制程序从外部计算机装置下载到PDS控制器（26），E G的可编程存储器（30），使用标准的连接器和电缆。

9. 发明公开

EP1248343A2 Modular architecture for industrial power delivery system 审中-公开
标题翻译： Modulare建筑工程师协会
公开(公告)号：EP1248343A2
公开(公告)日：2002-10-09
申请号：EP02001374.4
申请日：2002-01-19
申请人： Eni Technologies, Inc.
发明人： Keane, Anthony R.A. , Radomski, Aaron T. , Pulhamus, William R., Jr.
IPC分类号： H02J1/10
CPC分类号： H02J1/102 , H02M3/33515 , Y10T307/406
摘要： An industrial power delivery system configured in a modular architecture and having a plurality of modules. The modules interconnect via digital communication links and exchange data using a digital format. The modularity of the system enables the system to be scaled to vary future content of the product.
摘要翻译：发电机（32）包括使用数字通信链路互连的多个模块（49,5,5,61），并且其功率输出可以灵活地缩放。电源模块（48）从内务管理模块（50）接收电力，并将其输出传递到组合器模块（52），用于将可应用的输出组合到传感器模块（54），该模块可以将输出功率的参数监视到形成控制反馈。发电机系统包括独立的权利要求。

10. 发明公开

EP0975089A3 Parallel HV mosfet high power stable amplifier 审中-公开
标题翻译：具有平行Hochspannungsmosfet稳定的高功率放大器
公开(公告)号：EP0975089A3
公开(公告)日：2002-09-25
申请号：EP99305818.9
申请日：1999-07-22
申请人： Eni Technologies, Inc.
发明人： Chawla, Yogendra K. , Covert, Graig A.
IPC分类号： H03F3/193 , H03F3/21 , H03F1/56 , H03F3/26
CPC分类号： H03F3/505 , H03F1/565 , H03F3/193 , H03F3/211 , H03F2200/492 , H03F2203/5042
摘要： A high power grounded-drain common-source RF amplifier circuit employs a high voltage MOSFET. The RF signal at the input is applied with respect to ground via an isolation transformer whose secondary feeds the signal between gate and source. The output is taken from the source with respect to drain, which is grounded. A 13.56 MHz 3 KW power amplifier topology with isolated RF input drive for each MOSFET die uses a pair of kilowatt power transistors or KPTs, in which there are multiple large area MOSFET dies, with the drain regions of the dies being formed over a major portion of the die lower surface. The drain regions are in direct electrical and thermal contact with the conductive copper flange. The source and gate regions are formed on the dies away from the flat lower surface. One or more pairs of multi-chip KPTs can be configured to design stable 2.5 KW, 5 KW and 10 KW RF plasma generators at 13.56 MHz. The generators employ a low pass/high pass filter arrangement (diplexer) at the output for low harmonic distortion and dissipative harmonic termination.

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