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1. 发明授权

US08009391B2 Magnetic sensing element and method for manufacturing the same 有权
标题翻译：磁传感元件及其制造方法
公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

2. 发明授权

US07463026B2 Magnetic sensor including bridge circuit having fixed resistance like structure of element 有权
标题翻译：磁传感器包括具有固定电阻的桥接电路，如元件结构
公开(公告)号：US07463026B2
公开(公告)日：2008-12-09
申请号：US11679083
申请日：2007-02-26
申请人： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
发明人： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
IPC分类号： G01R33/09 , G01B7/14 , H01L43/08
CPC分类号： H04M1/0245 , B82Y25/00 , G01R33/07 , G01R33/093 , H04M2250/12
摘要： A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.
摘要翻译：磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随着外部磁场H1在正方向上的磁场强度的变化而变化。第二磁阻元件的电阻值R变化，第一磁阻元件的电阻值不随外部磁场H2在负方向的磁场强度的变化而变化。因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。

3. 发明申请

US20080174921A1 TUNNEL TYPE MAGNETIC SENSOR HAVING FIXED MAGNETIC LAYER OF COMPOSITE STRUCTURE CONTAINING CoFeB FILM, AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：具有包含CoFeB膜的复合结构的固定磁性层的隧道式磁性传感器及其制造方法
公开(公告)号：US20080174921A1
公开(公告)日：2008-07-24
申请号：US11859412
申请日：2007-09-21
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kota Asatsuma
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kota Asatsuma
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/10 , H01L43/12
摘要： A second fixed magnetic layer is formed of a CoFeB layer of CoFeB and an interface layer of CoFe or Co provided in that order from the bottom. An insulating barrier layer composed of Al—O is formed on the second fixed magnetic layer. When a lamination structure composed of CoFeB/CoFe/Al—O is formed as described above, a low RA and a high rate of change in resistance (ΔR/R) can be simultaneously obtained. In addition, variations in RA and rate of change in resistance (ΔR/R) can be suppressed as compared to that in the past.
摘要翻译：第二固定磁性层由CoFeB的CoFeB层和从底部依次提供的CoFe或Co的界面层形成。在第二固定磁性层上形成由Al-O构成的绝缘阻挡层。当如上所述形成由CoFeB / CoFe / Al-O组成的层叠结构时，可以同时获得低的RA和高的电阻变化率（DeltaR / R）。此外，与过去相比，可以抑制RA和电阻变化率（DeltaR / R）的变化。

4. 发明授权

US07365948B2 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film 失效
标题翻译：交换膜，交换膜的制造方法以及包含交换膜的磁感应元件
公开(公告)号：US07365948B2
公开(公告)日：2008-04-29
申请号：US10896084
申请日：2004-07-21
申请人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
发明人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
IPC分类号： G11B5/33 , G11B5/127 , H04R31/00
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , H01F10/30 , H01F10/3263 , H01F10/3272 , H01F41/308 , H01F41/325 , Y10T29/49021 , Y10T29/49032
摘要： An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
摘要翻译：交换耦合膜包括种子层，反铁磁层和铁磁层。籽晶层的厚度大于临界厚度，然后通过蚀刻使籽晶层的厚度减小到临界厚度以下。因此，可以形成从上表面向下表面延伸穿过晶种层的结晶相，和/或可以设定种子层中晶粒平行于层表面的方向上的平均尺寸大于种子层的厚度。因此，可以在反铁磁层和铁磁层之间产生大的交换耦合磁场Hex。

5. 发明申请

US20080074805A1 TUNNEL MAGNETORESISTIVE SENSOR IN WHICH AT LEAST PART OF PINNED LAYER IS COMPOSED OF CoFeB LAYER AND METHOD FOR MANUFACTURING THE TUNNEL MAGNETORESISTIVE SENSOR 有权
标题翻译：隧道磁体传感器，其中紧固层的至少一部分由CoFeB层组成，以及制造隧道磁传感器的方法
公开(公告)号：US20080074805A1
公开(公告)日：2008-03-27
申请号：US11857921
申请日：2007-09-19
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要翻译：隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

6. 发明申请

US20080068767A1 EXCHANGE-COUPLED FILM, METHOD FOR MAKING EXCHANGE-COUPLED FILM, AND MAGNETIC SENSING ELEMENT INCLUDING EXCHANGE-COUPLED FILM 审中-公开
标题翻译：交联膜，交联膜的制造方法以及包括交联膜的磁感应元件
公开(公告)号：US20080068767A1
公开(公告)日：2008-03-20
申请号：US11943955
申请日：2007-11-21
申请人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
发明人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , H01F10/30 , H01F10/3263 , H01F10/3272 , H01F41/308 , H01F41/325 , Y10T29/49021 , Y10T29/49032
摘要： An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
摘要翻译：交换耦合膜包括种子层，反铁磁层和铁磁层。籽晶层的厚度大于临界厚度，然后通过蚀刻使籽晶层的厚度减小到临界厚度以下。因此，可以形成从上表面向下表面延伸穿过晶种层的结晶相，和/或可以设定种子层中晶粒平行于层表面的方向上的平均尺寸大于种子层的厚度。因此，可以在反铁磁层和铁磁层之间产生大的交换耦合磁场Hex。

7. 发明授权

US07268984B2 Magnetic detecting element having a self-pinned layer 有权
标题翻译：磁性检测元件具有自固定层
公开(公告)号：US07268984B2
公开(公告)日：2007-09-11
申请号：US11156868
申请日：2005-06-20
申请人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
发明人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer having an artificial ferrimagnetic structure are disposed between a magnetostriction-enhancing layer made of a nonmagnetic metal and a nonmagnetic material layer having a higher lattice constant than Cu. CPP magnetic detecting elements allow this structure without reducing the variation in resistance per unit area ΔR·A. Thus, the magnetostriction coefficient of the pinned magnetic layer can be increased from above and below, thereby more firmly fixing the magnetization of the pinned magnetic layer.
摘要翻译：一种CPP磁检测元件，其具有以CIP磁检测元件不允许的结构的磁化被其单轴各向异性固定的钉扎磁性层。在CPP磁检测元件中，具有人造亚铁磁结构的钉扎磁性层的上表面和下表面设置在由非磁性金属制成的磁致伸缩增强层和具有比Cu更高的晶格常数的非磁性材料层之间。 CPP磁检测元件允许这种结构，而不减少每单位面积DeltaR.A的电阻变化。因此，可以从上方和下方增加钉扎磁性层的磁致伸缩系数，从而更牢固地固定被钉扎的磁性层的磁化。

8. 发明申请

US20070165336A1 MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER 审中-公开
标题翻译：具有层压种子层的磁性检测装置
公开(公告)号：US20070165336A1
公开(公告)日：2007-07-19
申请号：US11623671
申请日：2007-01-16
申请人： Kazumi Kamai , Naoya Hasegawa , Eiji Umetsu , Kazuaki Ikarashi
发明人： Kazumi Kamai , Naoya Hasegawa , Eiji Umetsu , Kazuaki Ikarashi
IPC分类号： G11B5/127
CPC分类号： G11B5/3929 , B82Y25/00 , G01R33/093 , G11B5/3906
摘要： A magnetic detecting device is provided. The magnetic detecting device includes a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed magnetic layer with a nonmagnetic material layer therebetween and which varies in magnetization by an external magnetic field. A seed layer is provided below the magnetoresistive effect part. The seed layer includes an Al layer laminated on an NiFeCr layer.
摘要翻译：提供磁检测装置。磁检测装置包括具有固定磁性层的磁阻效应部分和与其之间具有非磁性材料层的固定磁性层的自由磁性层，并且由外部磁场改变磁化强度。种子层设置在磁阻效应部分的下方。种子层包括层压在NiFeCr层上的Al层。

9. 发明授权

US06870715B2 Spin valve magnetoresistive head having a free layer contacted at each end by a ferromagnetic layer of a bias layer 有权
标题翻译：自旋阀磁阻头具有通过偏置层的铁磁层在每一端接触的自由层
公开(公告)号：US06870715B2
公开(公告)日：2005-03-22
申请号：US09960679
申请日：2001-09-21
申请人： Eiji Umetsu
发明人： Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/06 , H01F10/12 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268
摘要： A magnetoresistive element exhibiting good external magnetic field detection characteristics is provided. The magnetoresistive element includes a laminate comprising a nonmagnetic conductive layer, first and second ferromagnetic layer sandwiching the nonmagnetic conductive layer, and a first antiferromagnetic layer for pinning the magnetization direction of the first ferromagnetic layer, deposited on the face of the first ferromagnetic layer opposite the face in contact with the nonmagnetic conductive layer. Bias layers for applying a bias magnetic field to the second ferromagnetic layer are provided respectively on two ends of the laminate. Each bias layer comprises second and third antiferromagnetic layers and a third ferromagnetic layer sandwiched by the second and third antiferromagnetic layers so as to magnetically couple with the second and third antiferromagnetic layer. Two end faces of the second ferromagnetic layer come into contact with the third ferromagnetic layers.
摘要翻译：提供具有良好外部磁场检测特性的磁阻元件。磁阻元件包括层压体，其包括非磁性导电层，夹着非磁性导电层的第一和第二铁磁层和用于固定第一铁磁层的磁化方向的第一反铁磁层，第一铁磁层沉积在与第一铁磁层相对的第一铁磁层的表面上面对与非磁性导电层接触。分别在层叠体的两端设置用于向第二铁磁层施加偏置磁场的偏压层。每个偏置层包括第二和第三反铁磁层和夹在第二和第三反铁磁层之间的第三铁磁层，以便与第二和第三反铁磁层磁耦合。第二铁磁层的两个端面与第三铁磁层接触。

10. 发明授权

US06831817B2 Magnetic sensor having adjusted specific resistance distribution of first magnetic layer of free magnetic layer of multi-layered ferri-structure 有权
标题翻译：具有调整多层铁结构自由磁性层第一磁性层电阻分布的磁传感器
公开(公告)号：US06831817B2
公开(公告)日：2004-12-14
申请号：US10267201
申请日：2002-10-09
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/0008 , G11B2005/3996
摘要： A first magnetic layer includes an area which contains an element X (e.g., Cr) and is present in position toward the side of a nonmagnetic intermediate layer from the side near an opposite surface of the first magnetic layer away from an interface between the first magnetic layer and the nonmagnetic intermediate layer, and an area which is partly located in a region from the interface between the first magnetic layer and the nonmagnetic intermediate layer toward the opposite surface of the first magnetic layer and which does not contain the element X. Such an arrangement is able to improve a resistance change rate, to increase a coupling magnetic field based on the RKKY interaction, and to realize satisfactory control of magnetization of a free magnetic layer.
摘要翻译：第一磁性层包括含有元素X（例如Cr）的区域，并且从靠近第一磁性层的相对表面的一侧离开非磁性中间层侧的第一磁性层层和非磁性中间层，以及部分位于从第一磁性层和非磁性中间层之间的界面朝向第一磁性层的相反表面并且不包含元件X的区域中的区域。这样的能够提高电阻变化率，根据RKKY相互作用增加耦合磁场，实现对自由磁性层的磁化的令人满意的控制。

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