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1. 发明授权

US06316323B1 Method for forming bridge free silicide by reverse spacer 失效
标题翻译：通过反向间隔物形成无桥硅化物的方法
公开(公告)号：US06316323B1
公开(公告)日：2001-11-13
申请号：US09532847
申请日：2000-03-21
申请人： Edberg Fang , Wen-Yi Hsieh , Teng-Chun Tsai
发明人： Edberg Fang , Wen-Yi Hsieh , Teng-Chun Tsai
IPC分类号： H01L21336
CPC分类号： H01L29/66583 , H01L21/28052 , H01L21/28114 , H01L29/42376 , H01L29/66492 , H01L29/665 , H01L29/66537 , H01L29/66553
摘要： The proposed invention is used to prevent the bridging issue of salicide process and also to provide a self-aligned contacted process in conventional self-aligned silicide process. In short, the proposed invention is a two-step silicide process with a reverse spacer structure, and comprises following steps: providing a substrate; forming a pad layer on the substrate; forming a first cap layer on the pad layer; defining a trench region over the substrate and forming the trench; implanting first ions into part of the substrate that is uncovered by the first layer; forming a pair of spacers inside the trench; implanting second ions into part of the substrate that is not covered by the first layer and the spacers; forming a gate oxide layer that is located inside the trench; filling a polysilicon layer into the trench; capping a first metal layer on the polysilicon layer; performing a first rapid thermal process; removing unreacted the first metal layer; filling the trench by a second cap layer; removing the first cap layer and the pad layer that are not located inside the trench region, and then a gate structure is formed; forming a source and a drain inside the substrate; forming a second metal layer on the substrate; performing a second rapid thermal process; removing unreacted the second metal layer; performing a third rapid thermal process; forming a third cap layer on the substrate; and forming a pair of contacts inside the third cap layer.
摘要翻译：所提出的发明用于防止自对准硅化物工艺的桥接问题，并且还提供了常规自对准硅化物工艺中的自对准接触工艺。简而言之，本发明是具有反向间隔结构的两步硅化物工艺，包括以下步骤：提供衬底; 在衬底上形成衬垫层; 在所述垫层上形成第一盖层; 在衬底上限定沟槽区域并形成沟槽; 将第一离子注入未被第一层覆盖的部分基底; 在沟槽内形成一对垫片; 将第二离子注入未被第一层和间隔物覆盖的基底的一部分中; 形成位于沟槽内的栅氧化层; 将多晶硅层填充到沟槽中; 在多晶硅层上覆盖第一金属层; 执行第一快速热处理; 去除未反应的第一金属层; 通过第二盖层填充沟槽; 去除不位于沟槽区域内的第一覆盖层和焊盘层，然后形成栅极结构; 在衬底内形成源极和漏极; 在所述基板上形成第二金属层; 执行第二快速热处理; 去除未反应的第二金属层; 进行第三次快速热处理; 在所述基板上形成第三盖层; 以及在所述第三盖层内形成一对触点。

2. 发明授权

US06251778B1 Method for using CMP process in a salicide process 失效
标题翻译：在自杀过程中使用CMP工艺的方法
公开(公告)号：US06251778B1
公开(公告)日：2001-06-26
申请号：US09452410
申请日：1999-12-01
申请人： Edberg Fang , T. C. Tsai , L. M. Liu
发明人： Edberg Fang , T. C. Tsai , L. M. Liu
IPC分类号： H01L2144
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76819 , H01L29/66545
摘要： A method for using CMP processes in the salicide process for preventing bridging. Beginning with a semiconductor substrate with active regions defined completely by field oxide, the following steps are perfromed: forming a gate electrode and spaced lightly doped source and drain regions, the gate electrode comprising a gate oxide layer and a conducting gate; forming a hard mask layer on the gate electrode; forming spacers on sidewalls of the hard mask layer and the gate electrode, wherein the material used for the spacers is different from the material used for the hard mask layer; implanting ions into the substrate to form highly doped source and drain regions; removing the hard mask layer such that an opening is formed; conformally forming a metal layer on the source and drain regions, the spacers, and the conducting gate; forming an insulating layer on the metal layer and filling the opening, wherein the material of the insulating layer is different from the material of the spacers; polishing to remove an upper portion of the insulating layer, the metal layer and the spacers, whereby the metal layer becomes discontinuous; removing a portion of the metal layer between the spacers and the insulating layer; removing the insulating layer; and converting the metal layer to a silicide layer.
摘要翻译：在自对准硅化物工艺中使用CMP工艺以防止桥接的方法。从具有由场氧化物完全限定的有源区的半导体衬底开始，接下来的步骤：形成栅电极和间隔的轻掺杂源极和漏极区，栅电极包括栅氧化层和导电栅; 在栅电极上形成硬掩模层; 在硬掩模层和栅电极的侧壁上形成间隔物，其中用于间隔物的材料与用于硬掩模层的材料不同; 将离子注入到衬底中以形成高掺杂的源极和漏极区域; 去除硬掩模层，使得形成开口; 在源极和漏极区域上保形地形成金属层，间隔物和导电栅极; 在所述金属层上形成绝缘层并填充所述开口，其中所述绝缘层的材料与所述间隔物的材料不同; 抛光以除去绝缘层，金属层和间隔物的上部，由此金属层变得不连续; 去除所述间隔件和所述绝缘层之间的所述金属层的一部分; 去除绝缘层; 并将金属层转化为硅化物层。

3. 发明授权

US06255177B1 Method for fabricating a salicide gate 失效
标题翻译：用于制造自对准门的方法
公开(公告)号：US06255177B1
公开(公告)日：2001-07-03
申请号：US09568321
申请日：2000-05-09
申请人： Edberg Fang , Wen-Yi Hsieh
发明人： Edberg Fang , Wen-Yi Hsieh
IPC分类号： H01L21336
CPC分类号： H01L21/28052 , H01L29/66545
摘要： A fabrication method for a salicide gate is described, wherein the method comprising forming a gate structure on a substrate. The gate structure comprises a polysilicon gate and a selective-deposition dummy layer formed on the polysilicon gate. Source/drain regions are then formed on both sides of the gate structure in the substrate. After this, a dielectric layer is selectively deposited on the substrate, wherein the dielectric layer on the source/drain regions is thicker than the dielectric layer on the anti-reflection layer. A portion of the dielectric layer is removed until the anti-reflection layer is exposed. The anti-reflection layer is subsequently removed, followed by forming a salicide layer on the polysilicon gate to complete the manufacturing of a salicide gate.
摘要翻译：描述了一种用于硅化物栅极的制造方法，其中所述方法包括在衬底上形成栅极结构。栅极结构包括形成在多晶硅栅极上的多晶硅栅极和选择性沉积虚设层。然后在衬底中的栅极结构的两侧上形成源/漏区。此后，介电层被选择性地沉积在衬底上，其中源极/漏极区上的电介质层比抗反射层上的电介质层厚。去除介电层的一部分直到抗反射层被暴露。随后去除抗反射层，随后在多晶硅栅极上形成自对准硅化物层，以完成自对准硅栅的制造。

4. 发明授权

US06251711B1 Method for forming bridge free silicide 失效
标题翻译：形成无桥硅化物的方法
公开(公告)号：US06251711B1
公开(公告)日：2001-06-26
申请号：US09531108
申请日：2000-03-17
申请人： Edberg Fang , Wen-Yi Hsieh , Teng-Chun Tsai
发明人： Edberg Fang , Wen-Yi Hsieh , Teng-Chun Tsai
IPC分类号： H01L21335
CPC分类号： H01L29/66583 , H01L21/28052 , H01L21/28518
摘要： The proposed invention is a salicide process that is used to avoid bridge phenomena. In short, the proposed method for forming silicide without bridge phenomena comprises following steps: providing a substrate with a pad layer on the substrate; forming a first cap layer on the pad layer; defining a trench region; removing part of both the pad layer and the first cap layer that are located inside the trench region such that a trench is formed; filling the trench by a gate oxide layer and a polysilicon layer in sequence; capping a first metal layer on the polysilicon layer; performing a first rapid thermal process to form a first silicide layer over the gate oxide layer; removing excess the first metal layer; forming a second cap layer on the first silicide layer; planarizing surface of both the first cap layer and the second cap layer; removing the first cap layer; removing part of the pad layer that is not covered by the gate oxide layer and then a gate structure being formed; forming two light doped drain in the substrate; forming a spacer on sidewall of the gate structure; forming a sources and a drain in the substrate, herein the source and the drain is located around the light doped drains; forming some second metal layers on both the source and the drain; performing a second thermal process to form two second silicide layer over the source and the drain; removing excess the second metal layer; and then forming a third rapid thermal process.
摘要翻译：所提出的发明是用于避免桥梁现象的自杀过程。简而言之，所提出的无桥现象形成硅化物的方法包括以下步骤：在衬底上提供衬垫层; 在所述垫层上形成第一盖层; 限定沟槽区域; 去除位于沟槽区域内部的衬垫层和第一覆盖层的部分，使得形成沟槽; 按栅极氧化层和多晶硅层依次填充沟槽; 在多晶硅层上覆盖第一金属层; 执行第一快速热处理以在所述栅极氧化物层上形成第一硅化物层; 去除多余的第一金属层; 在所述第一硅化物层上形成第二盖层; 平坦化第一盖层和第二盖层的表面; 移除所述第一盖层; 去除未被栅极氧化物层覆盖的焊盘层的一部分，然后形成栅极结构; 在衬底中形成两个光掺杂漏极; 在栅极结构的侧壁上形成间隔物; 在衬底中形成源极和漏极，源极和漏极位于光掺杂漏极周围; 在源极和漏极上形成一些第二金属层; 执行第二热处理以在源极和漏极上形成两个第二硅化物层; 去除多余的第二金属层; 然后形成第三快速热处理。

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