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    • 6. 发明授权
    • Method for the adjustment of a semiconductor disc relative to a
radiation mask in X-ray photolithography
    • 用于在X射线光刻中相对于辐射掩模调整半导体盘的方法
    • US4187431A
    • 1980-02-05
    • US904597
    • 1978-05-10
    • Eckart Hundt
    • Eckart Hundt
    • H01L21/027G03F9/00G03F9/02G02B27/00
    • G03F9/70Y10S438/975
    • In an illustrative embodiment marks with dual x-ray permeable apertures are at three spaced locations on the mask and transmit x-ray beams which are directed obliquely to the semiconductor surface. In this case, the marks on the semiconductor disc may be formed by monocrystals shaped in conformity with the incident beam cross section and located so as to produce reflected x-ray beams which intersect correspondingly shaped further apertures of the respective dual aperture marks on the mask. Alternatively the beams may impinge on the surface of the semiconductor disc itself at an angle to produce reflection, with x-ray absorbing material surrounding each reflecting region. In either case the reflected beams as transmitted by the further apertures are detected as a measure of the degree of parallelism of the mask and semiconductor disc.
    • 在说明性实施例中,具有双X射线透过孔的标记位于掩模上的三个间隔开的位置,并且透射相对于半导体表面倾斜定向的x射线束。 在这种情况下,半导体盘上的标记可以由根据入射光束横截面成形的单晶形成,并且被定位成产生反射的x射线束,该反射的X射线束与掩模上相应的双光圈标记的相应形状的另外的孔相交 。 或者,光束可以以一定角度以一定角度撞击在半导体盘本身的表面上以产生反射,并且围绕每个反射区域的x射线吸收材料。 在任一种情况下,由另外的孔传输的反射光束被检测为掩模和半导体盘的平行度的度量。