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1. 发明授权

US4366230A Method for the preparation of highly heat-resistant relief structures and the use thereof 失效
标题翻译：制备高耐热浮雕结构的方法及其用途
公开(公告)号：US4366230A
公开(公告)日：1982-12-28
申请号：US270357
申请日：1981-06-04
申请人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner
发明人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner
IPC分类号： G03F7/004 , C08F2/00 , C08F2/46 , C08G73/06 , C08G73/10 , C08G73/18 , C08G73/22 , C08L79/08 , G03F7/027 , G03F7/038 , H01L21/027 , H05K3/00 , G03C5/00
CPC分类号： G03F7/0387 , C08G73/0694 , C08G73/1025 , C08G73/18 , C08G73/22 , C08L79/08
摘要： The invention relates to a method for the preparation of highly heat-resistant relief structures with a base of polymers of heterocyclic structure by applying radiation-sensitive soluble polymer precursor stages in the form of a film or foil to a substrate, irradiating the film or foil through negative patterns with actinic light or by deflecting a light, electron or ion beam, removing the non-irradiated film or foil portions and, optionally, by subsequent annealing, as well as to the use of relief structures prepared in this manner. It is provided to use as polymer precursor stages addition products of cyclic carboxylic-acid anhydrides with hydroxyl group-containing compounds, where the hydroxyl group-containing compounds represent addition products of olefinically unsaturated mono-epoxides on carboxyl group-containing prepolymers of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones or on amino group-containing prepolymers of polyimidazoles and polyimidazopyrrolones or on hydroxyl group-containing prepolymers of polyoxazoles. The relief structures prepared by the method according to the invention are suitable especially for use as resists, surface coating materials and insulating materials.
摘要翻译：本发明涉及一种制备具有杂环结构聚合物基底的高耐热浮雕结构的方法，通过将膜或箔形式的辐射敏感的可溶性聚合物前体级施加到基底上，照射该膜或箔通过具有光化光的负图案或通过偏转光，电子或离子束，去除未照射的膜或箔部分，以及任选地通过随后的退火，以及使用以这种方式制备的浮雕结构。提供用作含有羟基化合物的环状羧酸酐的聚合物前体反应产物，其中含羟基的化合物代表烯属不饱和单环氧化物在聚酰亚胺的含羧基预聚物上的加成产物，聚异吲哚喹唑啉二恶嗪，多嗪二聚体和聚喹唑啉二酮或聚咪唑和聚咪唑吡咯啉酮的含氨基的预聚物或含有羟基的聚恶唑的预聚物。通过根据本发明的方法制备的浮雕结构特别适合用作抗蚀剂，表面涂层材料和绝缘材料。

2. 发明授权

US4339521A Heat resistant positive resists containing polyoxazoles 失效
标题翻译：含抗氧剂的耐热正性抗菌剂
公开(公告)号：US4339521A
公开(公告)日：1982-07-13
申请号：US170935
申请日：1980-07-18
申请人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner
发明人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner
IPC分类号： G03C1/72 , C08G73/00 , C08G73/06 , C08G73/22 , G03F7/022 , G03F7/023 , H01L21/302 , G03C1/68
CPC分类号： G03F7/0233
摘要： The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.
摘要翻译：本发明涉及基于高耐热聚合物和光敏重氮醌的前体阶段的耐热正性抗蚀剂，以及制备这种正性抗蚀剂的耐热浮雕结构的方法。上述类型的正型抗蚀剂的开发方式使得它们具有耐热性并且具有长的储存寿命并且易于加工。本发明提供了芳族和/或杂环二羟基二氨基化合物和二羧酸氯化物或酯的缩聚产物形式的聚恶唑的低聚物和/或聚合物前体段的用途。根据本发明的正型抗蚀剂特别适用于微电子学领域。

3. 发明授权

US4045223A Method for the preparation of layer structures 失效
标题翻译：层结构的制备方法
公开(公告)号：US4045223A
公开(公告)日：1977-08-30
申请号：US598651
申请日：1975-07-24
申请人： Roland Rubner , Wolfgang Kleeberg , Eberhard Kuhn
发明人： Roland Rubner , Wolfgang Kleeberg , Eberhard Kuhn
IPC分类号： C08F290/00 , C08F299/00 , C08G73/00 , C08G73/06 , C08G73/10 , C08G73/12 , G03F7/035 , G03F7/038 , G03C5/00
CPC分类号： C08G73/12 , G03F7/038 , G03F7/0388
摘要： The invention provides a method for the preparation of solvent soluble, highly heat-resistant layered structures, using radiation-sensitive, soluble, preliminary polymers. According to the invention, soluble preliminary polymers are used which are prepared in a hexamethyl phosphoric acid triamide solution and which comprise polycondensation products of primary diamines with bicyclo[2.2.2.]octene-7-tetra carboxylic acid-2,3,5,6-diester-bis-acid chlorides wherein the ester groups are in the orthoposition with respect to the acid chloride groups and contain radiation-reactive radicals. Optionally di-ortho-tetracarboxylic acid-diester-bis-acid chlorides and/or di-ortho-tetracarboxylic acid-bis-anhydrides, carrying radiation-reactive ester radicals, can also be used in addition to the bicyclo[2.2.2.]octene-7-tetra carboxylic acid-2,3,5,6-diester-bis-acid chlorides.
摘要翻译：本发明提供了使用辐射敏感的可溶性初步聚合物制备溶剂可溶性，高耐热层状结构的方法。根据本发明，使用在六甲基磷酸三酰胺溶液中制备的可溶性初级聚合物，其包含伯二胺与双环[2.2.2]辛烯-7-四羧酸-2,3,5的缩聚产物， 6-二酯 - 双酸氯化物，其中所述酯基相对于酰氯基团处于相对位置并且含有辐射反应性基团。除二环[2.2.2。]外，还可以使用携带辐射反应性酯基的二邻 - 四羧酸 - 二酯 - 二酰氯和/或二邻 - 四羧酸 - 双酸酐。辛烯-7-四羧酸-2,3,5,6-二酯 - 双酸氯化物。

4. 发明授权

US4040831A Method for the preparation of relief structures 失效
标题翻译：浮雕结构的制备方法
公开(公告)号：US4040831A
公开(公告)日：1977-08-09
申请号：US598829
申请日：1975-07-24
申请人： Roland Rubner , Wolfgang Kleeberg , Eberhard Kuhn
发明人： Roland Rubner , Wolfgang Kleeberg , Eberhard Kuhn
IPC分类号： G03F7/035 , C08F290/00 , C08F299/00 , C08G71/00 , C08G71/02 , G03F7/004 , G03F7/038 , G03C5/00
CPC分类号： G03F7/038 , G03F7/0388
摘要： The invention provides a method for the preparation of relief structures of highly heat-resistant polymers, using radiation-sensitive, soluble preliminary polymers in the form of polyaddition or polycondensation products of polyfunctional carbocyclic or heterocyclic compounds containing radiation-sensitive radicals in ester groups bound to said compounds with diamines, diisocyanates, bis-acid chlorides or dicarboxylic acids of cyclic structure. According to the invention, the polyfunctional compounds containing the radiation-sensitive radicals contain, besides carboxyl, carboxylic acid chloride, amino, isocyanate or hydroxyl groups suitable for addition or condensation reactions, partly in ortho or peri-position thereto, radiation-reactive radicals in the ester groups bound to the compounds having an oxyalkylene methacrylate or acrylate structure.
摘要翻译：本发明提供了一种制备高耐热聚合物的浮雕结构的方法，该方法使用辐射敏感的可溶性初步聚合物，其形式为在与基团结合的酯基中含有辐射敏感基团的多官能碳环或杂环化合物的加成或缩聚产物所述化合物与二胺，二异氰酸酯，双酸氯化物或环状结构的二羧酸形成。根据本发明，含有辐射敏感性基团的多官能化合物除了羧基以外还含有适合于加成或缩合反应的羧酸氯化物，氨基，异氰酸酯或羟基，部分在其邻位或周围位置，辐射反应性基团酯基与具有氧亚烷基甲基丙烯酸酯或丙烯酸酯结构的化合物结合。

5. 发明授权

US4329556A N-Azidosulfonylaryl-maleinimides 失效
标题翻译： N-叠氮磺酰基芳基 - 马来酰亚胺
公开(公告)号：US4329556A
公开(公告)日：1982-05-11
申请号：US148142
申请日：1980-05-09
申请人： Roland Rubner , Eberhard Kuhn , Hellmut Ahne
发明人： Roland Rubner , Eberhard Kuhn , Hellmut Ahne
IPC分类号： C08K5/00 , C07D207/44 , C07D207/452 , C07D207/456 , C08K5/41 , C08K5/43
CPC分类号： C07D207/452 , C08K5/43
摘要： The invention relates to new arylsulfonylazides as well as the use of these compounds. The new compounds are characterized by the general formula: ##STR1## where R=aryl; x=1 or 2; and R.sup.1 and R.sup.2 are selected from H, CH.sub.3 and Cl and may be the same or different, with the provision that CH.sub.3 and Cl are not present side by side. The compounds according to the invention are suitable as photoinitiators in the preparation of relief structures by phototechniques from olefinically unsaturated polymers, as well as cross-link enhancing agents in the radical-wise cross linking of thermoplastic polymers.
摘要翻译：本发明涉及新的芳基磺酰基叠氮化物以及这些化合物的用途。新化合物的特征在于通式：其中R =芳基; x = 1或2; 并且R 1和R 2选自H，CH 3和Cl并且可以相同或不同，条件是CH 3和Cl不并列存在。根据本发明的化合物在通过光学技术从烯属不饱和聚合物制备浮雕结构中以及在热塑性聚合物的自由基交联中的交联增强剂中适合作为光引发剂。

6. 再颁专利

USRE30186E Method for the preparation of relief structures 失效
标题翻译：浮雕结构的制备方法
公开(公告)号：USRE30186E
公开(公告)日：1980-01-08
申请号：US972432
申请日：1978-12-22
申请人： Roland Rubner , Wolfgang Kleeberg , Eberhard Kuhn
发明人： Roland Rubner , Wolfgang Kleeberg , Eberhard Kuhn
IPC分类号： G03F7/038
CPC分类号： G03F7/0388
摘要： The invention provides a method for the preparation of relief structures of highly heat-resistant polymers, using radiation-sensitive, soluble preliminary polymers in the form of polyaddition or polycondensation products of polyfunctional carbocyclic or heterocyclic compounds containing radiation-sensitive radicals in ester groups bound to said compounds with diamines, diisocyanates, bis-acid chlorides or dicarboxylic acids of cyclic structure. According to the invention, the polyfunctional compounds containing the radiation-sensitive radicals contain, besides carboxyl, carboxylic acid chloride, amino, isocyanate or hydroxyl groups suitable for addition or condensation reactions, partly in ortho or periposition thereto, radiation-reactive radicals in the ester groups bound to the compounds having an oxyalkylene methacrylate or acrylate structure.

7. 发明授权

US4088489A Method for the preparation of relief structures 失效
标题翻译：浮雕结构的制备方法
公开(公告)号：US4088489A
公开(公告)日：1978-05-09
申请号：US598828
申请日：1975-07-24
申请人： Roland Rubner , Wolfgang Kleeberg , Eberhard Kuhn
发明人： Roland Rubner , Wolfgang Kleeberg , Eberhard Kuhn
IPC分类号： G03F7/004 , C08F290/00 , C08F299/00 , C08G18/00 , C08G18/67 , G03F7/038 , G03C5/00
CPC分类号： G03F7/0388
摘要： The invention provides a method for the preparation of relief structures of highly heat-resistant polymers, using radiation-sensitive, soluble preliminary polymers in the form of polyaddition or polycondensation products of polyfunctional carbocyclic or heterocyclic compounds containing radiation-sensitive radicals in ester groups bound to said compounds with diamines, diisocyanates, bis-acid chlorides or dicarboxylic acids of cyclic structure. According to the invention, the polyfunctional compounds carrying the radiation-sensitive radicals have, besides carboxyl, carboxylic acid chloride, amino, isocyanate or hydroxyl groups suitable for addition and condensation reactions, radiation-reactive radicals in the ester-groups bound to the compounds, partly in ortho or peri position thereto of the following structure: ##STR1## wherein: R.sub.1 = alkylene or aralkyleneR.sub.2 = h, ch.sub.3, clR.sub.3 = h
摘要翻译：本发明提供了一种制备高耐热聚合物的浮雕结构的方法，该方法使用辐射敏感的可溶性初步聚合物，其形式为在与基团结合的酯基中含有辐射敏感基团的多官能碳环或杂环化合物的加成或缩聚产物所述化合物与二胺，二异氰酸酯，双酸氯化物或环状结构的二羧酸形成。根据本发明，携带辐射敏感基团的多官能化合物除了羧基以外，还具有适于加成和缩合反应的羧酰氯，氨基，异氰酸酯或羟基，与化合物结合的酯基中的辐射反应性基团，部分地在其邻近或周围位置具有以下结构：其中：

8. 发明授权

US4397999A Polyimidazole and polyimidazopyrrolone precursor stages and the preparation thereof 失效
标题翻译：聚咪唑和聚咪唑吡咯酮前体阶段及其制备
公开(公告)号：US4397999A
公开(公告)日：1983-08-09
申请号：US179455
申请日：1980-08-19
申请人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner
发明人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner
IPC分类号： C08F299/00 , C08F290/00 , C08G73/00 , C08G73/02 , C08G73/06 , C08G73/18 , C08G73/20 , C09D171/00 , G03F7/038 , C08G69/48
CPC分类号： C08G73/18 , C08G73/20 , G03F7/0387 , Y10T428/31504 , Y10T428/31511 , Y10T428/31725
摘要： The present invention relates to oligomeric and/or polymeric precursor stages of polyimidazoles and polyimidazopyrrolones, as well as to a method for preparing these new precursor stages. The invention provides addition products of olefinically unsaturated monoepoxides on amino group-containing polycondensation products of aromatic and/or heterocyclic tetraamino compounds with dicarboxylic-acid chlorides or esters or on amino group-containing polyaddition products of the tetraamino compounds and tetracarboxylic-acid dianhydrides. The radiation-reactive precursor stages according to the invention are suited, for example, for the preparation of highly heat-resistant relief structures.
摘要翻译：本发明涉及聚咪唑和聚咪唑吡咯啉酮的低聚和/或聚合前体阶段，以及制备这些新的前体级的方法。本发明提供了芳族和/或杂环四氨基化合物与二羧酸氯化物或酯的氨基缩聚产物或四氨基化合物和四羧酸二酐的含氨基加成产物的烯属不饱和单环氧化物的加成产物。根据本发明的辐射反应性前体级适用于例如制备高耐热浮雕结构。

9. 发明授权

US4395482A Method for the preparation of heat-resistant relief structures using positive resists 失效
标题翻译：使用正性抗蚀剂制备耐热浮雕结构的方法
公开(公告)号：US4395482A
公开(公告)日：1983-07-26
申请号：US372540
申请日：1982-04-28
申请人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner
发明人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner
IPC分类号： G03C1/72 , C08G73/00 , C08G73/06 , C08G73/22 , G03F7/022 , G03F7/023 , H01L21/302 , G03C5/00
CPC分类号： G03F7/0233
摘要： The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.
摘要翻译：本发明涉及基于高耐热聚合物和光敏重氮醌的前体阶段的耐热正性抗蚀剂，以及制备这种正性抗蚀剂的耐热浮雕结构的方法。上述类型的正型抗蚀剂的开发方式使得它们具有耐热性并且具有长的储存寿命并且易于加工。本发明提供了芳族和/或杂环二羟基二氨基化合物和二羧酸氯化物或酯的缩聚产物形式的聚恶唑的低聚物和/或聚合物前体段的用途。根据本发明的正型抗蚀剂特别适用于微电子学领域。

10. 发明授权

US4311785A Method for the preparation of highly heat-resistant relief structures and the use thereof 失效
标题翻译：制备高耐热浮雕结构的方法及其用途
公开(公告)号：US4311785A
公开(公告)日：1982-01-19
申请号：US179454
申请日：1980-08-19
申请人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner , Erwin Schmidt
发明人： Hellmut Ahne , Eberhard Kuhn , Roland Rubner , Erwin Schmidt
IPC分类号： C08G73/00 , C08G73/10 , C08L79/04 , G03F7/004 , G03F7/038 , G03C1/70
CPC分类号： C08L79/04 , G03F7/0387 , Y10S430/107 , Y10S430/109
摘要： The invention relates to a method for the preparation of highly heat-resistant relief structures on the basis of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones by applying radiation-sensitive soluble polymer precursor stages to a substrate in the form of a film or a foil; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions and optionally, by subsequent annealing; as well as the use of relief structures so prepared. It is an object of the invention to simplify the preparation of relief structures of the type mentioned. For this purpose, it is provided to use as the polymer precursor stages addition products of olefinically unsaturated monoepoxides to carboxyl group-containing polyaddition products of aromatic and/or heterocyclic tetracarboxylic acid dianhydrides and diamino compounds or diamino compounds with at least one orthoposition amido group or of aromatic and/or heterocyclic dihydroxy dicarboxylic acids or corresponding diamino dicarboxylic acids and diisocyanates. The relief structures prepared by the method according to the invention are suitable in particular for use as a resist, surface coating material and insulating material.
摘要翻译：本发明涉及一种基于聚酰亚胺，多异吲哚喹唑啉二酮，多嗪二酮和聚喹唑啉二恶英制备高耐热浮雕结构的方法，其通过将辐射敏感的可溶性聚合物前体级施用于膜或挫败; 通过具有光化光的负图案或通过偏转光，电子或离子束照射膜或箔; 去除未照射的薄膜或箔片部分，任选地通过随后的退火; 以及如此准备的救济结构的使用。本发明的目的是简化上述类型的浮雕结构的制备。为此目的，提供用作烯属不饱和单环氧化物与芳族和/或杂环四羧酸二酸酐和二氨基化合物或二氨基化合物的含羧基加聚产物的至少一个取代酰胺基的加成产物的芳族和/或杂环二羟基二羧酸或相应的二氨基二羧酸和二异氰酸酯。通过根据本发明的方法制备的浮雕结构特别适合用作抗蚀剂，表面涂层材料和绝缘材料。

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