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1. 发明申请

WO2007001672A3 GROWTH OF HETEROJUNCTION BIPOLAR TRASISTOR STACKS BY REMOTE INJECTION 审中-公开
标题翻译：通过远程注射生长双极双极柱堆叠
公开(公告)号：WO2007001672A3
公开(公告)日：2008-08-21
申请号：PCT/US2006019234
申请日：2006-05-17
申请人： ATMEL CORP , ENICKS DARWIN G , CARVER DAMIAN A
发明人： ENICKS DARWIN G , CARVER DAMIAN A
IPC分类号： H01L29/73 , H01L29/732 , H01L31/072
CPC分类号： H01L29/7378 , H01L29/66242
摘要： A method, and a resulting device, for fabricating a heterojunction bipolar transistor (HBT). HBT devices have a high transconductance typical of bipolar devices and are additionally capable of high- power operation. To achieve the aforementioned characteristics, HBT devices are generally of the npn type, preferably with a thin, heavily doped base (117). The thin, heavily doped base (117) maintains a low base- spreading resistance, leading to a high maximum oscillation frequency. In order to maintain a high doping concentration while minimizing outdiffusion of the dopant material, carbon is remotely doped into the base region (117). Details of the carbon dopant techniques and procedures are described with respect to fabrication of an exemplary HBT device.
摘要翻译：一种用于制造异质结双极晶体管（HBT）的方法和所得到的器件。 HBT器件具有典型的双极器件的高跨导，并且还能够进行高功率操作。为了实现上述特征，HBT器件通常是npn型，优选地具有薄的重掺杂碱（117）。薄的重掺杂基极（117）保持低的基极扩展电阻，导致高的最大振荡频率。为了保持高掺杂浓度同时最小化掺杂剂材料的扩散，碳被远程掺杂到基极区域（117）中。关于制造示例性HBT装置来描述碳掺杂剂技术和程序的细节。

2. 发明申请

WO2008054957A1 SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY SELECTIVE, AND THERMALLY RESILIENT SILICON, GERMANIUM, OR SILICON-GERMANIUM ETCH-STOP 审中-公开
标题翻译：用于提供纳米级，高选择性和热恢复性硅，锗或硅锗蚀刻的系统和方法
公开(公告)号：WO2008054957A1
公开(公告)日：2008-05-08
申请号：PCT/US2007/080723
申请日：2007-10-08
申请人： ATMEL CORPORATION , ENICKS, Darwin, G.
发明人： ENICKS, Darwin, G.
IPC分类号： H01L21/30 , H01L23/58
CPC分类号： H01L29/7378 , H01L21/02532 , H01L21/02573 , H01L21/02579 , H01L21/0262 , H01L29/66242
摘要： A method and resulting etch- stop layer comprising a silicon-germanium layer and a dopant layer within the silicon-germanium layer. The silicon-germanium layer is comprised of less than about 70% germanium and contains one or more dopant elements selected from the group consisting of boron and carbon. The dopant layer has one or more of the dopant elements and an FWHM thickness value of less than 50 nanometers.
摘要翻译：一种方法和所得到的蚀刻停止层，其包含硅 - 锗层内的硅 - 锗层和掺杂剂层。硅锗层由小于约70％的锗组成，并且含有一种或多种选自硼和碳的掺杂元素。掺杂剂层具有一种或多种掺杂剂元素，并且FWHM厚度值小于50纳米。

3. 发明申请

WO2008024587A3 A HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) WITH PERIODIC MULTI LAYER BASE 审中-公开
标题翻译：具有周期性多层基板的异相双极晶体管（HBT）
公开(公告)号：WO2008024587A3
公开(公告)日：2008-09-04
申请号：PCT/US2007074232
申请日：2007-07-24
申请人： ATMEL CORP , ENICKS DARWIN G
发明人： ENICKS DARWIN G
IPC分类号： H01L31/11
CPC分类号： H01L29/161 , H01L29/165 , H01L29/66242 , H01L29/7378 , H01L29/7781 , H01L29/7782
摘要： A method and resulting electronic device utilizing periodic multi-layer (ML) (500) and/or superlattice (SL) structures in the base of a SiGe heteroj unction bipolar transistor (HBT) is disclosed. The SL is a special case of an ML, in which layers that are chemically different from adjacent neighbors are successively repeated. The use of the ML (500) in electronic and photonic devices enables strategic engineering of the energy band gap (551, 553) and carrier mobilities. Principles disclosed herein relate to npn- and pnp-type SiGe HBTs as well as HBTs made with other compound semiconductor materials (e.g., other Group III-V or II-VI materials). Additionally, technology and methods disclosed herein benefit other devices types such as, for example, metal oxide semiconductor field effect transistors (MOSFETs), high electron mobility transistors (HEMTs), high hole mobility transistors (HHMTs), bipolar junction transistors (BJTs), and FINFETs.
摘要翻译：公开了一种在SiGe异质结双极晶体管（HBT）的基极中利用周期性多层（ML）（500）和/或超晶格（SL）结构的方法和所得到的电子器件。 SL是ML的特殊情况，其中连续重复与相邻邻居化学不同的层。在电子和光子器件中使用ML（500）可以实现能带隙（551,553）和载波移动性的战略工程。本文公开的原理涉及npn-和pnp型SiGe HBT以及用其它化合物半导体材料（例如其它III-V族或II-VI族材料）制成的HBT。此外，本文公开的技术和方法还有益于其它器件类型，例如金属氧化物半导体场效应晶体管（MOSFET），高电子迁移率晶体管（HEMT），高空穴迁移率晶体管（HHMT），双极结型晶体管（BJT）和FINFETs。

4. 发明申请

WO2008057695A1 A NANOSCALE, HIGHLY SELECTIVE, THERMALLY RESILIENT CARBON ETCH-STOP 审中-公开
标题翻译： NANOSCALE，高选择性，热回收碳消耗
公开(公告)号：WO2008057695A1
公开(公告)日：2008-05-15
申请号：PCT/US2007/080830
申请日：2007-10-09
申请人： ATMEL CORPORATION , ENICKS, Darwin, G.
发明人： ENICKS, Darwin, G.
IPC分类号： H01L21/331
CPC分类号： H01L21/30608 , H01L21/02532 , H01L21/02573 , H01L21/02579 , H01L21/0262 , Y10S438/933
摘要： A method for forming an etch- stop layer and a resulting structure fabricated therefrom. The etch-stop layer is a silicon-germanium layer having a ratio of silicon to germanium of about 50:1 or less, a boron layer formed within the silicon-germanium layer where the boron layer has a full-width half-maximum (FWHM) thickness value of less than 50 nanometers, and a carbon layer formed within the silicon-germanium layer where the carbon layer has an FWHM thickness value of less than 50 nanometers. A ratio of boron to carbon in the etch-stop layer is in a range of about 0.5 to 1.5.
摘要翻译：一种用于形成蚀刻停止层的方法和由其制造的所得结构。蚀刻停止层是具有约50:1或更小的硅与锗的比例的硅 - 锗层，在硅 - 锗层内形成的硼层，其中硼层具有全宽半最大值（FWHM ）厚度值小于50纳米，以及形成在硅 - 锗层内的碳层，其中碳层的FWHM厚度值小于50纳米。蚀刻停止层中的硼与碳的比例在约0.5至1.5的范围内。

5. 发明申请

WO2007079372A3 AN OXYGEN ENHANCED METASTABLE SILICON GERMANIUM FILM LAYER 审中-公开
标题翻译：一种氧化增强的易溶性硅锗胶膜层
公开(公告)号：WO2007079372A3
公开(公告)日：2008-07-03
申请号：PCT/US2006062603
申请日：2006-12-26
申请人： ATMEL CORP , ENICKS DARWIN G , CHAFFEE JOHN T , CARVER DAMIAN A
发明人： ENICKS DARWIN G , CHAFFEE JOHN T , CARVER DAMIAN A
IPC分类号： H01L29/80
CPC分类号： H01L29/66242 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A method for pseudomorphic growth and integration of a strain-compensated metastable and/or unstable compound base (107) having incorporated oxygen and an electronic device (100) incorporating the base is described. The strain-compensated base (107) is doped by substitutional and/or interstitial placement of a strain-compensating atomic species. The electronic device may be, for example, a SiGe NPN HBT.
摘要翻译：描述了具有并入氧气的应变补偿的亚稳态和/或不稳定化合物碱（107）和掺入碱的电子器件（100）的伪生长和整合的方法。应变补偿基底（107）通过应变补偿原子物质的置换和/或间隙放置进行掺杂。电子设备可以是例如SiGe NPN HBT。

6. 发明申请

WO2008057692A2 SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY SELECTIVE, AND THERMALLY RESILIENT BORON ETCH-STOP 审中-公开
标题翻译：用于提供纳米级高选择性和热弹性硼蚀刻停止的系统和方法
公开(公告)号：WO2008057692A2
公开(公告)日：2008-05-15
申请号：PCT/US2007080772
申请日：2007-10-09
申请人： ATMEL CORP , ENICKS DARWIN G
发明人： ENICKS DARWIN G
IPC分类号： H01L21/31 , H01L31/0392
CPC分类号： H01L21/30608 , H01L21/32055 , H01L22/26
摘要： A method for forming an etch- stop layer and a resulting structure (500) fabricated therefrom. The etch-stop layer has a semiconductor layer having a first surface and a boron layer formed below the first surface of the semiconductor layer. The boron layer has a full- width half -maximum (FWHM) thickness value (501, 503) of less than 100 nanometers. The boron layer is formed by a chemical vapor deposition (CVD) system.
摘要翻译：一种形成蚀刻停止层和由此制造的所得结构（500）的方法。蚀刻停止层具有半导体层，该半导体层具有第一表面和在半导体层的第一表面下方形成的硼层。硼层具有小于100纳米的全宽度半最大值（FWHM）厚度值（501,503）。硼层由化学气相沉积（CVD）系统形成。

7. 发明申请

WO2007133949A1 A METHOD FOR MANIPULATION OF OXYGEN WITHIN SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：一种用于在半导体材料中操作氧的方法
公开(公告)号：WO2007133949A1
公开(公告)日：2007-11-22
申请号：PCT/US2007/068107
申请日：2007-05-03
申请人： ATMEL CORPORATION , ENICKS, Darwin, G.
发明人： ENICKS, Darwin, G.
IPC分类号： H01L31/00
CPC分类号： H01L29/167 , H01L21/265
摘要： Methods and electronic devices fabricated by those methods are disclosed where the method allows controlled movement of oxygen during fabrication of electronic and photonic devices, facilitated by a technique of oxygen updiffusion (OUD). The method includes fabrication of a compound semiconductor film (1303), doped with either carbon or boron, over a substrate (1301) and incorporating a quantity of oxygen (1307, 1309) into either the substrate (1301) or an adjacent film layer (1305). One or more anneal steps may be used as a partial control mechanism, along with dopant types, concentrations, and profiles, to control movement of the oxygen (1307, 1309) from the semiconductor substrate (1301) or adjacent films (1305) into the compound semiconductor film (1303).
摘要翻译：公开了通过这些方法制造的方法和电子器件，其中该方法允许在通过氧更新扩散（OUD）技术促进电子和光子器件的制造期间受控的氧气移动。该方法包括在衬底（1301）上制造掺杂有碳或硼的化合物半导体膜（1303），并将一定数量的氧（1307,1309）掺入衬底（1301）或相邻膜层 1305）。可以将一个或多个退火步骤用作部分控制机制以及掺杂剂类型，浓度和分布，以控制氧（1307,1309）从半导体衬底（1301）或相邻薄膜（1305）移动到化合物半导体膜（1303）。

8. 发明申请

WO2007079372A2 AN OXYGEN ENHANCED METASTABLE SILICON GERMANIUM FILM LAYER 审中-公开
标题翻译：一种氧化增强的易溶性硅锗胶膜层
公开(公告)号：WO2007079372A2
公开(公告)日：2007-07-12
申请号：PCT/US2006/062603
申请日：2006-12-26
申请人： ATMEL CORPORATION , ENICKS, Darwin, G. , CHAFFEE, John, T. , CARVER, Damian, A.
发明人： ENICKS, Darwin, G. , CHAFFEE, John, T. , CARVER, Damian, A.
IPC分类号： H01L21/331
CPC分类号： H01L29/66242 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A method for pseudomorphic growth and integration of a strain-compensated metastable and/or unstable compound base (107) having incorporated oxygen and an electronic device (100) incorporating the base is described. The strain-compensated base (107) is doped by substitutional and/or interstitial placement of a strain-compensating atomic species. The electronic device may be, for example, a SiGe NPN HBT.
摘要翻译：描述了具有并入氧气的应变补偿的亚稳态和/或不稳定化合物碱（107）和掺入碱的电子器件（100）的伪生长和整合的方法。应变补偿基底（107）通过应变补偿原子物质的置换和/或间隙放置进行掺杂。电子设备可以是例如SiGe NPN HBT。

9. 发明申请

WO2008054967A3 METHOD FOR PROVIDING A NANOSCALE, HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) ON INSULATOR 审中-公开
标题翻译：用于在绝缘体上提供纳米级高电子迁移率晶体管（HEMT）的方法
公开(公告)号：WO2008054967A3
公开(公告)日：2008-08-14
申请号：PCT/US2007080994
申请日：2007-10-10
申请人： ATMEL CORP , ENICKS DARWIN G
发明人： ENICKS DARWIN G
IPC分类号： H01L29/12 , H01L21/331
CPC分类号： H01L29/66431
摘要： A method and resulting high electron mobility transistor comprised of a substrate (801) and a relaxed silicon-germanium layer (805) formed over the substrate (801). A dopant layer is formed within the relaxed silicon-germanium layer (805). The dopant layer contains carbon and/or boron and has a full-width half-maximum (FWHM) thickness value of less than approximately 70 nanometers. A strained silicon layer (807) is formed over the relaxed silicon-germanium layer (805) and is configured to act as quantum well device.
摘要翻译：一种方法和由此产生的高电子迁移率晶体管，其包括形成在衬底（801）上的衬底（801）和松弛硅 - 锗层（805）。在松弛硅 - 锗层（805）内形成掺杂剂层。掺杂剂层含有碳和/或硼，并具有小于约70纳米的全宽半最大值（FWHM）厚度值。应变硅层（807）形成在松弛硅 - 锗层（805）之上并且被配置为用作量子阱器件。

10. 发明申请

WO2008054967A2 METHOD FOR PROVIDING A NANOSCALE, HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) ON INSULATOR 审中-公开
标题翻译：在绝缘子上提供纳米高电子移动晶体管（HEMT）的方法
公开(公告)号：WO2008054967A2
公开(公告)日：2008-05-08
申请号：PCT/US2007/080994
申请日：2007-10-10
申请人： ATMEL CORPORATION , ENICKS, Darwin, G.
发明人： ENICKS, Darwin, G.
IPC分类号： H01L29/739 , H01L21/338
CPC分类号： H01L29/66431
摘要： A method and resulting high electron mobility transistor comprised of a substrate (801) and a relaxed silicon-germanium layer (805) formed over the substrate (801). A dopant layer is formed within the relaxed silicon-germanium layer (805). The dopant layer contains carbon and/or boron and has a full-width half-maximum (FWHM) thickness value of less than approximately 70 nanometers. A strained silicon layer (807) is formed over the relaxed silicon-germanium layer (805) and is configured to act as quantum well device.
摘要翻译：由衬底（801）和形成在衬底（801）上方的松弛硅 - 锗层（805）组成的方法和由此产生的高电子迁移率晶体管。在松弛的硅 - 锗层（805）内形成掺杂剂层。掺杂剂层含有碳和/或硼并且具有小于约70纳米的全宽半最大值（FWHM）厚度值。在松弛的硅 - 锗层（805）上形成应变硅层（807），并且被配置为用作量子阱器件。

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