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    • 5. 发明申请
    • ELECTRONIC DEVICES AND METHODS OF MANUFACTURE
    • 电子设备及其制造方法
    • WO2003021636A2
    • 2003-03-13
    • PCT/US2002/026780
    • 2002-08-23
    • HONEYWELL INTERNATIONAL INC.ENDISCH, DenisLEVERT, Joseph
    • ENDISCH, DenisLEVERT, Joseph
    • H01L
    • H01L21/76224H01L21/02126H01L21/02282H01L21/3121H01L21/316H01L21/31612
    • An electronic device comprises a substrate with a trench having a lower portion and a top portion. The lower portion of the trench is filled with a cured spin-on compound, while the top portion is filled with a chemical vapor-deposited compound. Preferably, the chemical vapor-deposited compound has a surface that is substantially coplanar with the surface of the substrate. Particularly preferred methods of fabricating such devices include a step in which a trench is formed in the substrate, and in which a first compound is deposited in the trench by spin-on deposition. The first compound is partially removed from the trench to a level below the surface of the substrate, and in a further step, a second compound is deposited onto the upper surface of the first compound by chemical vapor deposition.
    • 电子设备包括具有沟槽的基底,该沟槽具有下部和顶部。 沟槽的下部填充有固化的旋涂化合物,而顶部填充有化学气相沉积化合物。 优选地,化学气相沉积化合物具有与基底的表面基本上共面的表面。 制造这种器件的特别优选的方法包括其中在衬底中形成沟槽的步骤,并且其中第一化合物通过旋涂沉积沉积在沟槽中。 将第一化合物从沟槽部分地除去到基底表面以下的水平,并且在另一步骤中,通过化学气相沉积将第二化合物沉积在第一化合物的上表面上。