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    • 1. 发明申请
    • FORMING PARTIAL-DEPTH FEATURES IN POLYMER FILM
    • 在聚合物膜中形成局部深度特征
    • WO2005031458A2
    • 2005-04-07
    • PCT/US2004/031732
    • 2004-09-27
    • FLIP CHIP TECHNOLOGIES, L.L.C.JOHNSON, Michael, E.ELENIUS, Peter
    • JOHNSON, Michael, E.ELENIUS, Peter
    • G03F
    • G03F1/50
    • A photomask (1900) for producing partial-depth features (712 and 912) in a photo-imageable polymer layer (412) on a wafer of a chip scale package (200) using exposure tools capable of resolving sizes of a critical dimension or larger, has a plurality of chrome lines (2101-2103). Each chrome line has a width (2105) that is less than the critical dimension, and each chrome line of the plurality of chrome lines is spaced apart less than the critical dimension. The plurality of chrome lines produces a single partial-depth feature, such as a via, through part of a thickness of the polymer layer. Alternatively, the photomask has a plurality of chrome circles (2206), each chrome circle having a diameter less than the critical dimension and being spaced apart less than the critical dimension, which produces the partial-depth feature. The photomask may also have chrome of width greater than the critical dimension and spaced from other chrome by a distance greater than the critical dimension, which produces a full-depth feature through the entire thickness of the polymer film. The partial-depth feature and the full-depth feature are produced substantially simultaneously during a single series of photo-imaging steps. By preselecting a size, shape and distance between the chrome, the photomask is capable of inscribing discernable markings on the polymer layer, of changing the thickness of the polymer layer, and of changing an optical property of the surface of the polymer layer. The abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims pursuant to 37 C.F.R. § 1.72(b).
    • 用于使用曝光工具在芯片级封装(200)的晶片上的可光成像聚合物层(412)中产生局部深度特征(712和912)的光掩模(1900),所述曝光工具能够 分辨临界尺寸或更大的尺寸,具有多条铬线(2101-2103)。 每条铬线具有小于临界尺寸的宽度(2105),并且多条铬线中的每条铬线间隔开的距离小于临界尺寸。 多条铬线通过聚合物层厚度的一部分产生单个局部深度特征,例如通孔。 或者,光掩模具有多个铬环(2206),每个铬环具有小于临界尺寸的直径并且间隔小于产生局部深度特征的临界尺寸。 光掩模也可以具有宽度大于临界尺寸的铬并且与其他铬间隔开大于临界尺寸的距离,其在整个聚合物膜的厚度上产生全深度特征。 部分深度特征和全深度特征在单个系列的光成像步骤期间基本上同时产生。 通过预先选择铬之间的尺寸,形状和距离,光掩模能够在聚合物层上刻出可识别的标记,改变聚合物层的厚度并改变聚合物层表面的光学性质。 提交摘要的理解是,根据37 C.F.R,它不会用于解释或限制权利要求的范围或含义。 &教派; 1.72(b)所示。
    • 3. 发明申请
    • FORMING PARTIAL-DEPTH FEATURES IN POLYMER FILM
    • 在聚合物膜中形成部分深度特征
    • WO2005031458A3
    • 2005-07-14
    • PCT/US2004031732
    • 2004-09-27
    • FLIP CHIP TECHNOLOGIES L L CJOHNSON MICHAEL EELENIUS PETER
    • JOHNSON MICHAEL EELENIUS PETER
    • G03C5/00G03F20060101G03F1/14G03F9/00G21K5/00
    • G03F1/50
    • A photomask (1900) for producing partial-depth features (712 and 912) in a photo-imageable polymer layer (412) on a wafer of a chip scale package (200) using exposure tools capable of resolving sizes of a critical dimension or larger, has a plurality of chrome lines (2101-2103). Each chrome line has a width (2105) that is less than the critical dimension, and each chrome line of the plurality of chrome lines is spaced apart less than the critical dimension. The plurality of chrome lines produces a single partial-depth feature, such as a via, through part of a thickness of the polymer layer. Alternatively, the photomask has a plurality of chrome circles (2206), each chrome circle having a diameter less than the critical dimension and being spaced apart less than the critical dimension, which produces the partial-depth feature. The photomask may also have chrome of width greater than the critical dimension and spaced from other chrome by a distance greater than the critical dimension, which produces a full-depth feature through the entire thickness of the polymer film. The partial-depth feature and the full-depth feature are produced substantially simultaneously during a single series of photo-imaging steps. By preselecting a size, shape and distance between the chrome, the photomask is capable of inscribing discernable markings on the polymer layer, of changing the thickness of the polymer layer, and of changing an optical property of the surface of the polymer layer. The abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims pursuant to 37 C.F.R. § 1.72(b).
    • 一种光掩模(1900),用于使用能够分辨关键尺寸或更大尺寸的曝光工具在芯片级封装(200)的晶片上的可光成像聚合物层(412)中产生部分深度特征(712和912) 具有多条铬线(2101-2103)。 每个铬线具有小于临界尺寸的宽度(2105),并且多个铬线的每个铬线间隔开小于临界尺寸。 多条铬线通过聚合物层的厚度的一部分产生单一部分深度特征,例如通孔。 或者,光掩模具有多个铬圆(2206),每个铬圆的直径小于临界尺寸,并且间隔开小于临界尺寸,产生部分深度特征。 光掩模还可以具有大于临界尺寸的宽度的铬,并且与其它铬隔开大于临界尺寸的距离,其通过聚合物膜的整个厚度产生全深度特征。 部分深度特征和全深度特征在单个系列的光成像步骤期间基本上同时产生。 通过预先选择铬之间的尺寸,形状和距离,光掩模能够在聚合物层上刻划可辨别的标记,改变聚合物层的厚度和改变聚合物层的表面的光学性质。 提交摘要的理解是,根据37 C.F.R.不会将其用于解释或限制权利要求的范围或含义。 §1.72(b)。