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    • 6. 发明申请
    • Methods for Particle Reduction in Semiconductor Processing
    • 半导体处理中减少粒子的方法
    • US20130210233A1
    • 2013-08-15
    • US13371185
    • 2012-02-10
    • Tien-Chih ChengHung-Wen ChangDu-Cheng Wang
    • Tien-Chih ChengHung-Wen ChangDu-Cheng Wang
    • H01L21/308
    • H01L21/0209H01L21/02041H01L21/02057H01L21/02096H01L21/0274
    • Methods for removing particles from a wafer for photolithography. A method is provided including providing a semiconductor wafer; attaching a polyimide layer to a backside of the semiconductor wafer; and performing an etch on an active surface of the semiconductor wafer; wherein particles that impinge on the backside during the etch are captured by the polyimide layer. In another method, includes attaching a layer of polyimide film to a backside of a semiconductor wafer; dry etching a material on an active surface of the semiconductor wafer; depositing of an additional layer of material on the active surface of the semiconductor wafer; removing the layer of polyimide film from the backside of the semiconductor wafer; patterning the layer of material using an immersion photolithography process to expose a photoresist on the active surface of the wafer; and repeating the attaching, dry etching, depositing, removing and patterning steps.
    • 用于从用于光刻的晶片去除颗粒的方法。 提供了一种提供半导体晶片的方法; 将聚酰亚胺层附着到所述半导体晶片的背面; 以及对半导体晶片的有源表面进行蚀刻; 其中在蚀刻期间撞击在背面上的颗粒被聚酰亚胺层捕获。 在另一种方法中,包括将聚酰亚胺膜层附着到半导体晶片的背面; 干蚀刻半导体晶片的有源表面上的材料; 在半导体晶片的有源表面上沉积附加的材料层; 从半导体晶片的背面去除聚酰亚胺膜层; 使用浸没光刻工艺图案化材料层以暴露晶片的有源表面上的光致抗蚀剂; 并重复附着,干蚀刻,沉积,去除和图案化步骤。