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1. 发明授权

US5552655A Low frequency mechanical resonator 失效
标题翻译：低频机械谐振器
公开(公告)号：US5552655A
公开(公告)日：1996-09-03
申请号：US450226
申请日：1995-05-25
申请人： Robert B. Stokes , Jay D. Cushman , Drew Cushman
发明人： Robert B. Stokes , Jay D. Cushman , Drew Cushman
IPC分类号： H03H9/05 , H03H9/17 , H03H9/58 , H01L41/08
CPC分类号： H03H9/585 , H03H9/02228 , H03H9/588
摘要： A low frequency mechanical resonator that resonates at relatively low frequencies and can be fabricated as part of an integrated circuit. The resonator includes a piezoelectric structure having a top piezoelectric layer and a bottom piezoelectric layer positioned over a recessed area in a substrate. A top input electrode is positioned on the top surface of the top piezoelectric layer, a middle shield electrode is positioned between the piezoelectric layers, and a bottom output electrode is positioned on the bottom surface of the bottom piezoelectric layer adjacent the recessed area. By applying an appropriate alternating current to the top electrode, the top piezoelectric layer is alternately contracted and expanded. Because the top piezoelectric layer is secured to the bottom piezoelectric layer, the piezoelectric structure will flex up and down in order to relieve stress within the structure. The flexing of the piezoelectric structure causes flexural waves within the piezoelectric structure which resonate at a particular frequency depending on the membrane material, membrane thickness, and the width of the recessed area. The top and bottom electrodes can be replaced with interdigital transducers in order to select particular higher order flexural resonances for higher resonant frequencies.
摘要翻译：低频机械谐振器，其在较低频率下谐振并可作为集成电路的一部分制造。谐振器包括具有位于衬底中的凹陷区域上方的顶部压电层和底部压电层的压电结构。顶部输入电极位于顶部压电层的顶表面上，中间屏蔽电极位于压电层之间，底部输出电极位于邻近凹陷区域的底部压电层的底表面上。通过向顶部电极施加适当的交流电，顶部压电层交替地收缩和膨胀。因为顶部压电层被固定到底部压电层，所以压电结构将上下弯曲以减轻结构内的应力。压电结构的弯曲会导致压电结构内的弯曲波，其根据膜材料，膜厚度和凹陷区域的宽度以特定频率共振。顶部和底部电极可以用叉指式换能器代替，以便为更高的谐振频率选择特定的较高阶弯曲谐振。

2. 发明授权

US5382930A Monolithic multipole filters made of thin film stacked crystal filters 失效
标题翻译：由薄膜堆叠晶体滤波器制成的单片多极滤波器
公开(公告)号：US5382930A
公开(公告)日：1995-01-17
申请号：US993575
申请日：1992-12-21
申请人： Robert B. Stokes , Edward M. Garber , Jay D. Crawford , Drew Cushman
发明人： Robert B. Stokes , Edward M. Garber , Jay D. Crawford , Drew Cushman
IPC分类号： H03H3/04 , H03H9/56 , H03H9/58
CPC分类号： H03H9/588 , H03H3/04 , H03H9/585
摘要： This invention discloses a monolithic multipole stacked crystal filter comprised of a series of cascaded 2-port semiconductor bulk acoustic resonator stacked crystal filters electrically cascaded and a shunt inductor connected between each of the 2-port filters. Each of the 2-port filters including a first and second piezoelectric layer, typically aluminum nitride. A first input electrode is positioned on a top surface of one of the piezoelectric layers and a second output electrode is positioned on a bottom surface of the other of the piezoelectric layers. A ground electrode is positioned between the piezoelectric layers. In this regard, the piezoelectric layers will resonate at a resonant frequency and provide bandpass filter characteristics. The complete monolithic multipole filter provides control of the passband shape which yields highly desirable filter characteristics.
摘要翻译：本发明公开了一种单片多极叠层晶体滤波器，由一系列级联的2端口半导体体声波谐振器和级联的层叠晶体滤波器以及连接在每个2端口滤波器之间的并联电感器组成。每个2端口滤波器包括第一和第二压电层，通常为氮化铝。第一输入电极位于压电层之一的顶表面上，第二输出电极位于另一个压电层的底表面上。接地电极位于压电层之间。在这方面，压电层将以谐振频率谐振并提供带通滤波器特性。完整的单片多极滤波器提供对通带形状的控制，其产生非常期望的滤波器特性。

3. 发明授权

US6150703A Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials 失效
标题翻译：使用锥形电极的半导体体声波谐振器（SBAR）器件中的横向模式抑制，以及电极边缘阻尼材料
公开(公告)号：US6150703A
公开(公告)日：2000-11-21
申请号：US106729
申请日：1998-06-29
申请人： Drew Cushman , Jay D. Crawford
发明人： Drew Cushman , Jay D. Crawford
IPC分类号： H01L41/08 , H03H9/00 , H03H9/02 , H03H9/13 , H03H9/17 , H01L29/82
CPC分类号： H03H9/02118 , H03H9/132 , Y10T29/42
摘要： A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics is suitable for use in a wide variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave modes. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, applied along at least a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.
摘要翻译：具有改进的通带插入损耗和相位性能特性的半导体体声波谐振器（SBAR）适用于各种窄带滤波应用。 SBAR被配置为抑制横向传播声波模式。横向声波模式通过改变谐振器电极的横向尺寸和/或利用诸如聚酰亚胺等粘弹性材料的粘性阻尼材料来控制，沿着电极的周边的至少一部分被施加以衰减反射的电极边缘处的横向声学模式返回到电极区域中。

4. 发明授权

US5446306A Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) 失效
标题翻译：薄膜电压调谐半导体体声波谐振器（SBAR）
公开(公告)号：US5446306A
公开(公告)日：1995-08-29
申请号：US166338
申请日：1993-12-13
申请人： Robert B. Stokes , Jay D. Crawford , Drew Cushman , Alvin M. W. Kong
发明人： Robert B. Stokes , Jay D. Crawford , Drew Cushman , Alvin M. W. Kong
IPC分类号： H04R17/10 , H01L29/82 , H01L41/04 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H03H9/02 , H03H9/17 , H03H9/58
CPC分类号： H03H9/585 , H03H9/02102 , H03H2009/02196
摘要： Disclosed is a thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR). A piezoelectric film is positioned between a first electrode and a second electrode and positioned adjacent a semiconductor substrate containing a via hole. A variable voltage source applies a DC bias voltage to the electrodes which causes an electric field to be created between the electrodes within the piezoelectric film. The resulting electric field causes the piezoelectric film to resonate at a frequency different than its unbiased resonant frequency. By adjusting the variable voltage source to change the DC bias voltage, the resonant frequency from the thin film semiconductor bulk acoustic resonator (SBAR) can be varied.
摘要翻译：公开了薄膜电压调谐半导体体声波谐振器（SBAR）。压电膜位于第一电极和第二电极之间并且位于邻近包含通孔的半导体衬底上。可变电压源对电极施加DC偏置电压，这导致在压电膜内的电极之间产生电场。所产生的电场使得压电膜以不同于其无偏的共振频率的频率谐振。通过调节可变电压源来改变直流偏置电压，可以改变来自薄膜半导体体声波谐振器（SBAR）的谐振频率。

5. 发明授权

US06381820B1 Semiconductor bulk acoustic resonator with suppressed lateral modes 有权
标题翻译：具有抑制横向模式的半导体体声波谐振器
公开(公告)号：US06381820B1
公开(公告)日：2002-05-07
申请号：US09407199
申请日：1999-09-28
申请人： Drew Cushman , Jay D. Crawford
发明人： Drew Cushman , Jay D. Crawford
IPC分类号： H01L4100
CPC分类号： H03H9/02118 , H03H9/132 , Y10T29/42
摘要： A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics making it suitable for use in a wider variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave mode. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, along at least~a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.
摘要翻译：具有改进的通带插入损耗和相位性能特性的半导体体声波谐振器（SBAR），使其适用于更广泛种类的窄带滤波应用。 SBAR被配置为抑制横向传播声波模式。横向声波模式通过改变谐振器电极的横向尺寸和/或利用粘性阻尼材料（例如粘弹性材料，例如聚酰亚胺）沿着电极周边的至少一部分来衰减反射来控制的电极边缘处的横向声学模式返回到电极区域中。

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