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    • 7. 发明授权
    • Biosensor having nano wire for detecting food additive mono sodium glutamate and manufacturing method thereof
    • 具有用于检测食品添加剂单谷氨酸钠的纳米线的生物传感器及其制造方法
    • US07927651B2
    • 2011-04-19
    • US12296070
    • 2007-04-04
    • Seung-Hun HongByung-Yang LeeDong-Joon Lee
    • Seung-Hun HongByung-Yang LeeDong-Joon Lee
    • C23C14/54
    • G01N33/5438C12Q1/005G01N27/3278G01N33/02G01N33/9406
    • There is provided a biosensor capable of increasing a detecting sensitivity of a target substance of glutamate, by using a nano wire having excellent electrical characteristics and by immobilizing a receptor of glutamate to be detected on a substrate which is disposed between a nano wire and another nano wire and a method for manufacturing the same. The biosensor for detecting glutamate according to the present invention can be manufactured with an arrangement in which the nano wire is selectively arranged on a solid substrate in a matrix. Since this biosensor can prevent the degradation of the nano wire in the electrical characteristic, it can sensitively detect glutamate even through a small amount thereof is contained in a food so that it can be effectively used in detecting the food additive existing in the processed foodstuffs.
    • 本发明提供一种生物传感器,其能够通过使用具有优异的电气特性的纳米线和通过将待检测的谷氨酸受体固定在配置在纳米线与其他纳米线之间的基板上来提高谷氨酸的目标物质的检测灵敏度 线及其制造方法。 根据本发明的用于检测谷氨酸的生物传感器可以通过将纳米线选择性地布置在基质中的固体基质上的布置来制造。 由于该生物传感器能够防止纳米线在电气特性中的劣化,因此即使食品中含有少量的氨基酸也能够灵敏地检测谷氨酸,因此能够有效地用于检测加工食品中存在的食品添加剂。
    • 8. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US07692264B2
    • 2010-04-06
    • US11984208
    • 2007-11-14
    • Dong Joon Lee
    • Dong Joon Lee
    • H01L29/00
    • H01L29/515H01L21/26586H01L21/76232H01L21/823412H01L21/823418H01L21/823481
    • A semiconductor device and a method for manufacturing the same are provided. A gate insulating film is formed under a vacuum condition to prevent deterioration of reliability of the device due to degradation of a gate insulating material and to have stable operating characteristics. The semiconductor device includes an element isolating film formed at element isolating regions of a semiconductor substrate, which is divided into active regions and the element isolating regions; a gate insulating film having openings with a designated width formed at the active regions of the semiconductor substrate; gate electrodes formed on the gate insulating film; and lightly doped drain regions and source/drain impurity regions formed in the surface of the semiconductor substrate at both sides of the gate electrodes.
    • 提供半导体器件及其制造方法。 在真空条件下形成栅极绝缘膜,以防止由栅极绝缘材料的劣化引起的器件的可靠性的劣化,并具有稳定的工作特性。 半导体器件包括形成在半导体衬底的元件隔离区域处的元件隔离膜,其被分成活性区域和元件隔离区域; 栅极绝缘膜,具有形成在所述半导体衬底的有源区上的具有指定宽度的开口; 形成在栅极绝缘膜上的栅电极; 以及在栅电极的两侧形成在半导体衬底的表面中的轻掺杂漏区和源/漏杂质区。