会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Method and system for reducing the variation in film thickness on a plurality of semiconductor wafers having multiple deposition paths in a semiconductor manufacturing process
    • 用于在半导体制造工艺中减少具有多个沉积路径的多个半导体晶片上的膜厚变化的方法和系统
    • US07509186B2
    • 2009-03-24
    • US11557134
    • 2006-11-07
    • Yue LiGary W. BehmJames V. Iannucci, Jr.Derek C. Stoll
    • Yue LiGary W. BehmJames V. Iannucci, Jr.Derek C. Stoll
    • G06F19/00H01L21/66
    • H01L22/12
    • A method and system for reducing the variation in film thickness on a plurality of semiconductor wafers having multiple deposition paths in a semiconductor manufacturing process is disclosed. A film of a varying input thickness is applied to semiconductor wafers moving through various film deposition paths. The deposition path of each of the semiconductor wafers is recorded. A subset of semiconductor wafers is measured and an average film input thickness corresponding to each of the film deposition paths is calculated. If semiconductor wafer in the specific film deposition path does not have measurement data, by default it uses historical measurement data. The average film input thickness of the deposition path corresponding to a given semiconductor wafer is then used to modify the recipe of a process tool, such as a Chemical Mechanical Planarization (CMP) Process Tool. An improved manufacturing process is achieved without the use of excess measurements.
    • 公开了一种用于在半导体制造工艺中减少具有多个沉积路径的多个半导体晶片上的膜厚变化的方法和系统。 将具有变化的输入厚度的膜施加到通过各种膜沉积路径移动的半导体晶片。 记录每个半导体晶片的沉积路径。 测量半导体晶片的子集,并计算对应于每个膜沉积路径的平均膜输入厚度。 如果特定成膜路径中的半导体晶片不具有测量数据,则默认使用历史测量数据。 然后使用对应于给定半导体晶片的沉积路径的平均膜输入厚度来修改诸如化学机械平面化(CMP)工艺工具的处理工具的配方。 在不使用过量测量的情况下实现改进的制造工艺。
    • 6. 发明申请
    • METHOD AND SYSTEM FOR REDUCING THE VARIATION IN FILM THICKNESS ON A PLURALITY OF SEMICONDUCTOR WAFERS HAVING MULTIPLE DEPOSITION PATHS IN A SEMICONDUCTOR MANUFACTURING PROCESS
    • 用于在半导体制造工艺中减少具有多个沉积块的多个半导体波长的膜厚度的变化的方法和系统
    • US20080124818A1
    • 2008-05-29
    • US11557134
    • 2006-11-07
    • Yue LiGary W. BehmJames V. IannucciDerek C. Stoll
    • Yue LiGary W. BehmJames V. IannucciDerek C. Stoll
    • H01L21/66B05C11/00
    • H01L22/12
    • A method and system for reducing the variation in film thickness on a plurality of semiconductor wafers having multiple deposition paths in a semiconductor manufacturing process is disclosed. A film of a varying input thickness is applied to semiconductor wafers moving through various film deposition paths. The deposition path of each of the semiconductor wafers is recorded. A subset of semiconductor wafers is measured and an average film input thickness corresponding to each of the film deposition paths is calculated. If semiconductor wafer in the specific film deposition path does not have measurement data, by default it uses historical measurement data. The average film input thickness of the deposition path corresponding to a given semiconductor wafer is then used to modify the recipe of a process tool, such as a Chemical Mechanical Planarization (CMP) Process Tool. An improved manufacturing process is achieved without the use of excess measurements.
    • 公开了一种用于在半导体制造工艺中减少具有多个沉积路径的多个半导体晶片上的膜厚变化的方法和系统。 将具有变化的输入厚度的膜施加到通过各种膜沉积路径移动的半导体晶片。 记录每个半导体晶片的沉积路径。 测量半导体晶片的子集,并计算对应于每个膜沉积路径的平均膜输入厚度。 如果特定成膜路径中的半导体晶片不具有测量数据,则默认使用历史测量数据。 然后使用对应于给定半导体晶片的沉积路径的平均膜输入厚度来修改诸如化学机械平面化(CMP)工艺工具的处理工具的配方。 在不使用过量测量的情况下实现改进的制造工艺。