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1. 发明授权

US09243558B2 Compressed air energy storage 有权
标题翻译：压缩空气能量储存
公开(公告)号：US09243558B2
公开(公告)日：2016-01-26
申请号：US13419101
申请日：2012-03-13
申请人： Dean Samara-Rubio , Elizabeth Samara-Rubio , Harold Ackler , Robert Moffat
发明人： Dean Samara-Rubio , Elizabeth Samara-Rubio , Harold Ackler , Robert Moffat
IPC分类号： F15B1/00 , F02C6/16 , F15B1/24 , F15B11/072 , H02J15/00
CPC分类号： F02C6/16 , F15B1/24 , F15B11/0725 , F15B2201/205 , F15B2201/21 , F15B2201/31 , F15B2201/3152 , F15B2201/405 , F15B2201/4053 , F15B2201/42 , F15B2211/20515 , F15B2211/20569 , F15B2211/212 , H02J15/006 , Y02E60/15 , Y10T137/3115 , Y10T137/3124 , Y10T137/474 , Y10T137/4857 , Y10T137/86187
摘要： Certain examples present an improved compressed-air energy storage system. The system can include multiple sequential stages, in which accumulators are charged with air, which influences a hydraulic fluid to influence a pump/motor, and vice versa.
摘要翻译：某些实例提出了改进的压缩空气能量存储系统。该系统可以包括多个顺序阶段，其中蓄能器充满空气，其影响液压流体以影响泵/马达，反之亦然。

2. 发明申请

US20130240068A1 Compressed Air Energy Storage 有权
标题翻译：压缩空气能量储存
公开(公告)号：US20130240068A1
公开(公告)日：2013-09-19
申请号：US13419101
申请日：2012-03-13
申请人： Dean Samara-Rubio , Elizabeth Samara-Rubio , Harold Ackler , Robert Moffat
发明人： Dean Samara-Rubio , Elizabeth Samara-Rubio , Harold Ackler , Robert Moffat
IPC分类号： F17D1/00
CPC分类号： F02C6/16 , F15B1/24 , F15B11/0725 , F15B2201/205 , F15B2201/21 , F15B2201/31 , F15B2201/3152 , F15B2201/405 , F15B2201/4053 , F15B2201/42 , F15B2211/20515 , F15B2211/20569 , F15B2211/212 , H02J15/006 , Y02E60/15 , Y10T137/3115 , Y10T137/3124 , Y10T137/474 , Y10T137/4857 , Y10T137/86187
摘要： Certain examples present an improved compressed-air energy storage system. The system can include multiple sequential stages, in which accumulators are charged with air, which influences a hydraulic fluid to influence a pump/motor, and vice versa.
摘要翻译：某些实例提出了改进的压缩空气能量存储系统。该系统可以包括多个顺序阶段，其中蓄能器充满空气，其影响液压流体以影响泵/马达，反之亦然。

3. 发明申请

US20080277647A1 Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon 失效
标题翻译：基于Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件
公开(公告)号：US20080277647A1
公开(公告)日：2008-11-13
申请号：US11663024
申请日：2005-09-16
申请人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
发明人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC分类号： H01L31/0264
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
摘要： A semiconductor structure including a single quantum well Ge1−x1−ySix1Sn/Ge1−x2Six2 heterostructure grown strain-free on Si(100) via a Sn1−xGex buffer layer is shown.
摘要翻译：包括单量子阱的半导体结构Ge 1-x1-y Si 1 Sn 1 / x 1 x 2 Si x 2 x 2 示出了在Si（100）上通过Sn 1-x N Ge x S x缓冲层生长无应变的异质结构。

4. 发明授权

US07242866B2 Methods and apparatus for switching N optical input signals to M optical outputs 有权
标题翻译：用于将N个光输入信号切换到M个光输出的方法和装置
公开(公告)号：US07242866B2
公开(公告)日：2007-07-10
申请号：US10230455
申请日：2002-08-29
申请人： Dean Samara-Rubio , Chunli Cai
发明人： Dean Samara-Rubio , Chunli Cai
IPC分类号： H04J14/00
CPC分类号： H04Q11/0005 , H04Q2011/0015 , H04Q2011/0016 , H04Q2011/0049
摘要： Apparatus and methods for switching N optical input signals to M optical outputs are disclosed. In an example, an apparatus includes a plurality of optically transparent fabrics. Each of the fabrics receive at least one optical input signal and switch that received signal to at least one of a plurality of intermediate outputs. A multiplexer is operatively coupled between the intermediate outputs of the plurality of optically transparent fabrics and the M optical outputs.
摘要翻译：公开了将N个光输入信号切换到M个光输出的装置和方法。在一个示例中，设备包括多个光学透明织物。每个织物接收至少一个光输入信号，并将接收到的信号切换到多个中间输出中的至少一个。多路复用器可操作地耦合在多个光学透明织物的中间输出和M个光学输出之间。

5. 发明授权

US06649898B1 Method and apparatus for optically enabling a circuit component in a large scale integrated circuit 失效
标题翻译：用于光学实现大规模集成电路中的电路部件的方法和装置
公开(公告)号：US06649898B1
公开(公告)日：2003-11-18
申请号：US09608732
申请日：2000-06-30
申请人： Siegfried Fleischer , Dean Samara-Rubio
发明人： Siegfried Fleischer , Dean Samara-Rubio
IPC分类号： H01L3100
CPC分类号： H04B10/25
摘要： According to the invention, systems, apparatus and methods are disclosed for optically enabling a circuit component in a large scale integrated circuit. In one embodiment, the invention is a circuit comprising a light sensing device for producing a signal in response to sensing light, an optic function subcircuit, and a switch connected to the light sensing device and to the optic function subcircuit for activating the optic function subcircuit when light is sensed. The light sensing device is preferably a phototransistor and a light sensing circuit is preferably placed between the light sensing device and the switch for amplifying and conditioning the light sensing signal. The optic function subcircuit can be an optical modulator, an optical receiver or any other device that is to be operated and powered only when incident light is present. The switch can be a logic gate or a transistor switch coupled to the light sensing device and to an input to the optic function subcircuit, such as a power supply or a clock input, for alternately enabling and disabling the input to the optic function subcircuit.
摘要翻译：根据本发明，公开了用于光学实现大规模集成电路中的电路部件的系统，装置和方法。在一个实施例中，本发明是一种电路，包括用于响应于感测光产生信号的光感测装置，光学功能子电路和连接到光感测装置的开关和用于激活光功能子电路的光功能子电路当感光时。光感测装置优选是光电晶体管，并且光感测电路优选地放置在光感测装置和开关之间，用于放大和调理光感测信号。光功能分支电路可以是光调制器，光接收器或任何其它仅在存在入射光时被操作和供电的装置。开关可以是耦合到光感测装置的逻辑门或晶体管开关，以及耦合到诸如电源或时钟输入的光功能子电路的输入，用于交替地启用和禁用光功能子电路的输入。

6. 发明申请

US20060120653A1 Phase shifting optical device with dopant barrier 有权
标题翻译：具有掺杂剂阻挡层的相移光学器件
公开(公告)号：US20060120653A1
公开(公告)日：2006-06-08
申请号：US11328482
申请日：2006-01-09
申请人： Dean Samara-Rubio , Ling Liao , Dexter Hodge
发明人： Dean Samara-Rubio , Ling Liao , Dexter Hodge
IPC分类号： G02F1/01 , G02F1/295 , G02B6/10
CPC分类号： G02F1/2257 , G02F1/025 , G02F2001/0152
摘要： A doped barrier region included in an optical phase shifter is disclosed. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide and a second region of the optical waveguide. The second region of the optical waveguide includes a higher doped region of material and a lower doped region of material. An insulating region disposed between the first and second regions of the optical waveguide is also included. A first portion the higher doped region is disposed proximate to the insulating region. A dopant barrier region is also included and is disposed between the higher and lower doped regions of the second region of the optical waveguide.
摘要翻译：公开了包括在光学移相器中的掺杂阻挡区域。在一个实施例中，根据本发明的实施例的装置包括光波导的第一区域和光波导的第二区域。光波导的第二区域包括较高掺杂材料区域和较低掺杂区域的材料。还包括设置在光波导的第一和第二区域之间的绝缘区域。高掺杂区域的第一部分靠近绝缘区域设置。还包括掺杂剂阻挡区并且设置在光波导的第二区的较高和较低掺杂区之间。

7. 发明申请

US20050281525A1 Phase shifting optical device with dopant barrier 失效
标题翻译：具有掺杂剂阻挡层的相移光学器件
公开(公告)号：US20050281525A1
公开(公告)日：2005-12-22
申请号：US10872982
申请日：2004-06-21
申请人： Dean Samara-Rubio , Ling Liao , Dexter Hodge
发明人： Dean Samara-Rubio , Ling Liao , Dexter Hodge
IPC分类号： G02B6/00 , G02B6/10 , G02F1/025 , G02F1/225
CPC分类号： G02F1/2257 , G02F1/025 , G02F2001/0152
摘要： A doped barrier region included in an optical phase shifter is disclosed. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide and a second region of the optical waveguide. The second region of the optical waveguide includes a higher doped region of material and a lower doped region of material. An insulating region disposed between the first and second regions of the optical waveguide is also included. A first portion the higher doped region is disposed proximate to the insulating region. A dopant barrier region is also included and is disposed between the higher and lower doped regions of the second region of the optical waveguide.
摘要翻译：公开了包括在光学移相器中的掺杂阻挡区域。在一个实施例中，根据本发明的实施例的装置包括光波导的第一区域和光波导的第二区域。光波导的第二区域包括较高掺杂材料区域和较低掺杂区域的材料。还包括设置在光波导的第一和第二区域之间的绝缘区域。高掺杂区域的第一部分靠近绝缘区域设置。还包括掺杂剂阻挡区并且设置在光波导的第二区的较高和较低掺杂区之间。

8. 发明授权

US06903325B2 Method and apparatus for optically enabling a circuit component in a large scale integrated circuit 失效
标题翻译：用于光学实现大规模集成电路中的电路部件的方法和装置
公开(公告)号：US06903325B2
公开(公告)日：2005-06-07
申请号：US10671155
申请日：2003-09-25
申请人： Siegfried Fleischer , Dean Samara-Rubio
发明人： Siegfried Fleischer , Dean Samara-Rubio
IPC分类号： G01J1/32 , H01J40/14 , H01L31/00 , H04B10/12
CPC分类号： H04B10/25
摘要： According to the invention, systems, apparatus and methods are disclosed for optically enabling a circuit component in a large scale integrated circuit. In one embodiment, the invention is a circuit comprising a light sensing device for producing a signal in response to sensing light, an optic function subcircuit, and a switch connected to the light sensing device and to the optic function subcircuit for activating the optic function subcircuit when light is sensed. The light sensing device is preferably a phototransistor and a light sensing circuit is preferably placed between the light sensing device and the switch for amplifying and conditioning the light sensing signal. The optic function subcircuit can be an optical modulator, an optical receiver or any other device that is to be operated and powered only when incident light is present. The switch can be a logic gate or a transistor switch coupled to the light sensing device and to an input to the optic function subcircuit, such as a power supply or a clock input, for alternately enabling and disabling the input to the optic function subcircuit.
摘要翻译：根据本发明，公开了用于光学实现大规模集成电路中的电路部件的系统，装置和方法。在一个实施例中，本发明是一种电路，包括用于响应于感测光产生信号的光感测装置，光学功能子电路和连接到光感测装置的开关和用于激活光功能子电路的光功能子电路当感光时。光感测装置优选是光电晶体管，并且光感测电路优选地放置在光感测装置和开关之间，用于放大和调理光感测信号。光功能分支电路可以是光调制器，光接收器或任何其它仅在存在入射光时被操作和供电的装置。开关可以是耦合到光感测装置的逻辑门或晶体管开关，以及耦合到诸如电源或时钟输入的光功能子电路的输入，用于交替地启用和禁用光功能子电路的输入。

9. 发明授权

US06441676B1 Externally programmable antifuse 失效
标题翻译：外部可编程反熔丝
公开(公告)号：US06441676B1
公开(公告)日：2002-08-27
申请号：US09823694
申请日：2001-03-30
申请人： Sean M. Koehl , Dean Samara-Rubio , Ding Yi
发明人： Sean M. Koehl , Dean Samara-Rubio , Ding Yi
IPC分类号： H01H3776
CPC分类号： H01L23/5252 , G11C17/18 , H01L2924/0002 , H01L2924/00
摘要： A method for programming an antifuse circuit that includes a capacitor and a detector. The capacitor is formed using standard MOS processes in a well. The gate serves as one electrode and the well serves as another electrode of the capacitor. The antifuse is programmed by eternally provided radiation that can rupture the gate oxide so that the gate and the well can contact each other. The gate and well form a PN junction, transforming the capacitor into a diode. The diode provides the conductive path of the programmed antifuse.
摘要翻译：一种用于编程包括电容器和检测器的反熔断电路的方法。在井中使用标准MOS工艺形成电容器。栅极用作一个电极，阱用作电容器的另一个电极。反熔丝通过永久提供的辐射来编程，其可以使栅极氧化物破裂，使得栅极和阱可以彼此接触。栅极和阱形成PN结，将电容器变换为二极管。二极管提供编程反熔丝的导电路径。

10. 发明授权

US07582891B2 Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon 失效
标题翻译：基于在Si-Ge-Sn缓冲硅上生长的IV族量子阱的材料和光学器件
公开(公告)号：US07582891B2
公开(公告)日：2009-09-01
申请号：US11663024
申请日：2005-09-16
申请人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
发明人： John Kouvetakis , Jose Menendez , John Tolle , Ling Liao , Dean Samara-Rubio
IPC分类号： H01L29/739
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , G02F2203/11 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L31/028 , H01L31/035254 , H01L31/109 , Y02E10/547
摘要： Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.
摘要翻译：提供了具有通过Sn1-xGex缓冲层在Si（100）上生长无应变的至少一个量子阱异质结的半导体结构及其用途。

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