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1. 发明专利

GB190429305A Improvements in or relating to Range-finders, Range-indicators and the like. 未知
公开(公告)号：GB190429305A
公开(公告)日：1906-01-31
申请号：GB190429305D
申请日：1904-12-31
申请人： LAWFORD GEORGE MAXWELL , CAPPER DAVID SING , KIRKLAND THOMAS
发明人： LAWFORD GEORGE MAXWELL , CAPPER DAVID SING , KIRKLAND THOMAS
摘要： 29,305. Lawford, G. M., Capper, D. S., and Kirkland, T. Dec. 31. Telemeters. - Relates to range-finding, rangeindicating, and like telemeters of the type in which two telescopes or two sets of sights are mounted at a definite angle to one another on a base-piece along which one of the telescopes can be adjusted. Fig. 1 shows diagrammatically a base-bar C carrying a fixed telescope A and an adjustable telescope B so arranged that the distance of the object 0 sighted is proportional to the distance between the telescopes. The instrument may be adapted to measure long or short ranges by varying the angle between the telescopes, stops being provided to determine the desired angle, and separate scales of range being marked on the base-bar C for the different angles. As shown in Figs. 2. 3, and 4, the movable telescope B may be supported by a carriage D adjusted along the base-bar C by a rack C' and a pinion D or by band or other devices. To enable one observer to sight the object through both telescopes at once, mirrors or prisms may be used so as to produce in effect a binocular or a monocular with a divided field. The range may be read on scales C', C by pointers F , F carried by a disc F which is used to adjust the inclination of the movable telescope B, through bevel gearing. This inclination is fixed by a removable stop pin E'. The distance may however be indicated on a dial or drum geared to the movable telescope. The base-bar maybe arranged horizontally, vertically, or inclined. It is shown horizontally pivoted to lugs G on an arm G adapted to be adjusted in azimuth about a spigot G by worm, and worm-wheel and toothed gearing, the worm spindle K being mounted in eccentric bushes so that the worm can be put into and out of gear by the operation of a handle K . The base-bar C, when adjusted about its horizontal pivots, is held in position by pistons H which are prevented from moving by water or other fluid in two cylinders H, the communication between the cylinders being opened or cut off at will by a valve H . The movable telescope may be replaced by an adjustable prism and a fixed prism which reflects light into the fixed telescope or into a supplementary one. A single telescope with a divided object glass or a pair of telescopes may be used to observe the object by reflection.

2. 发明专利

FR362653A 未知
公开(公告)号：FR362653A
公开(公告)日：1906-07-04
申请号：FR362653D
申请日：1906-01-23
申请人： GEORGE MANWELL LAWFORD , DAVID SING CAPPER , CONRAD BECK
发明人： LAWFORD GEORGE MANWELL , CAPPER DAVID SING , BECK CONRAD
IPC分类号： G01C3/10

3. 发明申请

US20130134612A1 SYSTEM AND METHOD FOR FRAGMENTATION AND DISPERSAL OF A COMPRESSED GAS BODY 审中-公开
标题翻译：压缩气体分解和分散的系统和方法
公开(公告)号：US20130134612A1
公开(公告)日：2013-05-30
申请号：US13304344
申请日：2011-11-24
申请人： Cameron Phillip Lewis , David Sing-Khing Ting , Edward Christian Janson Carrtveau , Ning Cao
发明人： Cameron Phillip Lewis , David Sing-Khing Ting , Edward Christian Janson Carrtveau , Ning Cao
IPC分类号： B01F3/04 , F15D1/00
CPC分类号： F17C1/007 , F17C2201/0176 , F17C2201/052 , F17C2203/0685 , F17C2205/013 , F17C2205/0188 , F17C2221/012 , F17C2221/031 , F17C2225/0123 , F17C2225/035 , F17C2260/04 , F17C2270/0128 , H02J3/28 , H02J15/006 , Y02E60/15 , Y02E60/321 , Y10T137/0318
摘要： A method for fragmenting a bubble of compressed gas released from a compressed gas reservoir situated at a depth under a water surface. The method comprises maintaining a grid disposed between the reservoir and the water surface to fragment the bubble into a plurality of fragmented bubble portions, the grid allowing passage therethrough of the fragmented bubble portions of the body of compressed gas generally along a travel path.
摘要翻译：一种从位于水面下方的深度的压缩气体储集层释放的压缩气体的气泡碎裂的方法。该方法包括保持设置在储存器和水表面之间的格栅，以将气泡分解成多个分散的气泡部分，栅格允许压缩气体主体的碎裂的气泡部分大体沿行进路径通过。

4. 发明授权

US819031A Range-finder. 失效
公开(公告)号：US819031A
公开(公告)日：1906-04-24
申请号：US1906297506
申请日：1906-01-23
申请人： BECK CONRAD , GEORGE MAXWELL LAWFORD , DAVID SING CAPPER
发明人： BECK CONRAD , BECK HORACE COURTHOPE
CPC分类号： G01C3/24 , G02F1/1335

5. 发明授权

US07642163B2 Process of forming an electronic device including discontinuous storage elements within a dielectric layer 有权
标题翻译：在电介质层内形成包括不连续存储元件的电子器件的工艺
公开(公告)号：US07642163B2
公开(公告)日：2010-01-05
申请号：US11693829
申请日：2007-03-30
申请人： Rajesh A. Rao , Tushar P. Merchant , Ramachandran Muralidhar , Gowrishankar Chindalore , David Sing , Jane Yater
发明人： Rajesh A. Rao , Tushar P. Merchant , Ramachandran Muralidhar , Gowrishankar Chindalore , David Sing , Jane Yater
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L21/28273 , H01L29/42328 , H01L29/42332 , H01L29/7881
摘要： An electronic device can include a nonvolatile memory cell having DSEs within a dielectric layer. In one aspect, a process of forming the electronic device can include implanting and nucleating a first charge-storage material to form DSEs. The process can also include implanting a second charge-storage material and growing the DSEs such that the DSEs include the first and second charge-storage material. In another aspect, a process of forming the electronic device can include forming a semiconductor layer over a dielectric layer, implanting a charge-storage material, and annealing the dielectric layer. After annealing, substantially none of the charge-storage material remains within a denuded zone within the dielectric layer. In a third aspect, within a dielectric layer, a first set of DSEs can be spaced apart from a second set of DSEs, wherein substantially no DSEs lie between the first set of DSEs and the second set of DSEs.
摘要翻译：电子设备可以包括在电介质层内具有DSE的非易失性存储单元。一方面，形成电子器件的方法可以包括将第一电荷存储材料植入和成核以形成DSE。该过程还可以包括植入第二电荷储存材料并生长DSE，使得DSE包括第一和第二电荷存储材料。在另一方面，形成电子器件的工艺可以包括在电介质层上形成半导体层，注入电荷存储材料，以及退火介电层。在退火之后，基本上没有一种电荷存储材料保留在电介质层内的裸露区域内。在第三方面，在介电层内，第一组DSE可以与第二组DSE间隔开，其中基本上没有DSE位于第一组DSE和第二组DSE之间。

6. 发明申请

US20060223335A1 Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof 有权
标题翻译：形成具有不对称介电区域的半导体器件及其结构的方法
公开(公告)号：US20060223335A1
公开(公告)日：2006-10-05
申请号：US11092289
申请日：2005-03-29
申请人： Leo Mathew , Venkat Kolagunta , David Sing
发明人： Leo Mathew , Venkat Kolagunta , David Sing
IPC分类号： H01L21/336 , H01L21/31 , H01L21/469
CPC分类号： H01L21/26506 , H01L21/26586 , H01L29/1083 , H01L29/665 , H01L29/6656 , H01L29/66659 , H01L29/7835 , H01L29/785 , H01L29/78624 , H01L2924/0002 , Y10S438/981 , H01L2924/00
摘要： A method for forming a semiconductor device including forming a semiconductor substrate; forming a gate electrode over the semiconductor substrate having a first side and a second side, and forming a gate dielectric under the gate electrode. The gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode, a second area under the gate electrode and adjacent the second side of the gate electrode, and a third area under the gate electrode that is between the first area and the second area, wherein the first area is thinner than the second area, and the third area is thinner than the first area and is thinner than the second area.
摘要翻译：一种形成半导体器件的方法，包括形成半导体衬底; 在具有第一侧和第二侧的半导体衬底上形成栅电极，以及在栅极下形成栅极电介质。栅极电介质具有栅电极下方的第一区域，并且与栅电极的第一侧相邻，第二区域在栅电极下方并且邻近栅电极的第二侧，栅极下方的第三区域位于栅电极之间第一区域和第二区域，其中第一区域比第二区域薄，第三区域比第一区域薄，并且比第二区域薄。

7. 发明申请

US20080242022A1 ELECTRONIC DEVICE INCLUDING DISCONTINUOUS STORAGE ELEMENTS WITHIN A DIELECTRIC LAYER AND PROCESS OF FORMING THE ELECTRONIC DEVICE 有权
标题翻译：在电介质层中包括不连续存储元件的电子器件和形成电子器件的工艺
公开(公告)号：US20080242022A1
公开(公告)日：2008-10-02
申请号：US11693829
申请日：2007-03-30
申请人： Rajesh A. Rao , Tushar P. Merchant , Ramachandran Muralidhar , Gowrishankar Chindalore , David Sing , Jane Yater
发明人： Rajesh A. Rao , Tushar P. Merchant , Ramachandran Muralidhar , Gowrishankar Chindalore , David Sing , Jane Yater
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L21/28273 , H01L29/42328 , H01L29/42332 , H01L29/7881
摘要： An electronic device can include a nonvolatile memory cell having DSEs within a dielectric layer. In one aspect, a process of forming the electronic device can include implanting and nucleating a first charge-storage material to form DSEs. The process can also include implanting a second charge-storage material and growing the DSEs such that the DSEs include the first and second charge-storage material. In another aspect, a process of forming the electronic device can include forming a semiconductor layer over a dielectric layer, implanting a charge-storage material, and annealing the dielectric layer. After annealing, substantially none of the charge-storage material remains within a denuded zone within the dielectric layer. In a third aspect, within a dielectric layer, a first set of DSEs can be spaced apart from a second set of DSEs, wherein substantially no DSEs lie between the first set of DSEs and the second set of DSEs.
摘要翻译：电子设备可以包括在电介质层内具有DSE的非易失性存储单元。一方面，形成电子器件的方法可以包括将第一电荷存储材料植入和成核以形成DSE。该过程还可以包括植入第二电荷储存材料并生长DSE，使得DSE包括第一和第二电荷存储材料。在另一方面，形成电子器件的工艺可以包括在电介质层上形成半导体层，注入电荷存储材料，以及退火介电层。在退火之后，基本上没有一种电荷存储材料保留在电介质层内的裸露区域内。在第三方面，在介电层内，第一组DSE可以与第二组DSE间隔开，其中基本上没有DSE位于第一组DSE和第二组DSE之间。

8. 发明申请

US20070172996A1 Method of forming a semiconductor device with decreased undercutting of semiconductor material 有权
标题翻译：半导体器件底切成形的方法
公开(公告)号：US20070172996A1
公开(公告)日：2007-07-26
申请号：US11339133
申请日：2006-01-25
申请人： Leo Mathew , David Sing , Venkat Kolagunta
发明人： Leo Mathew , David Sing , Venkat Kolagunta
IPC分类号： H01L21/8232
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/66818
摘要： A semiconductor device is formed by patterning a semiconductor layer to create a vertical active region and a horizontal active region, wherein the horizontal active region is adjacent the vertical active region. The semiconductor layer overlies an insulating layer. A spacer is formed adjacent the vertical active region and over a portion of the horizontal active region. At least a portion of the horizontal active region is oxidized to form an isolation region. The spacer is removed. A gate dielectric is formed over the vertical active region after removing the spacer. A gate electrode is formed over the gate dielectric. However, forming the spacer is optional.
摘要翻译：通过图案化半导体层以形成垂直有源区域和水平有源区域形成半导体器件，其中水平有源区域与垂直有源区域相邻。半导体层覆盖绝缘层。在垂直有源区域和水平有源区域的一部分附近形成间隔物。水平有源区域的至少一部分被氧化以形成隔离区域。移除间隔物。在去除间隔物之后，在垂直有源区上形成栅极电介质。在栅极电介质上形成栅电极。然而，形成间隔物是可选的。

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